Patterned substrates with darkened conductor traces

ABSTRACT

The present disclosure provides an article having a substrate having a first nanostructured surface and an opposing second surface; and a conductor micropattern disposed on the first surface of the substrate, the conductor micropattern formed by a plurality of traces. The micropattern may have an open area fraction greater than 80%. The traces of the conductor micropattern may have a specular reflectance in a direction orthogonal to and toward the first surface of the substrate of less than 50%. The nanostructured surface may include nanofeatures having a height from 50 to 750 nanometers, a width from 15 to 200 nanometers, and a lateral spacing from 5 to 500 nanometers. The articles are useful in devices such as displays, in particular, touch screen displays useful for mobile hand held devices, tablets and computers. They also find use in antennas and for EMI shields.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.13/979,710, which claims the benefit of U.S. Provisional PatentApplication No. 61/438,800, filed Feb. 2, 2011, the disclosure of whichis incorporated by reference herein in its entirety. This application isrelated to assignee's U.S. Provisional Patent Application No.61/593,666, filed Feb. 2, 2011 which is incorporated by reference in itsentirety.

BACKGROUND

The use of metal-based conductor mesh for application where lighttransmission and electrical conductance are needed is known in the art.Examples of such applications include shielding for electromagneticinterference for displays. In the industry, a mesh is typicallyunderstood to mean a pattern geometry having connected traces that areseparated by open area to form cells.

It has been observed in the current work that some mesh designs, whenintegrated into a display and viewed under reflected, collimated light(such as in direct sunlight), may produce undesirable visual effects.Illustrative undesirable visual effects include, e.g., a starburstpattern for reflected light and bands of colored reflected light(similar to a rainbow) caused by light interference, each beingobservable when a mesh containing linear traces and a repeating cellgeometry is disposed an unmodified substrate, such as a plastic film orglass. Illustrative examples of meshes with linear traces include thosehaving hexagonal and square cells. Sparkle, which is an undesirablevisual appearance of points of reflected light, can also appear forlinear traced-based conductor meshes.

Some skilled in the art have attempted to reduce the visual appearanceof overlaid mesh micropatterns by using wavy traces in producing adisplay, such as a touch screen display. See, e.g., PCT InternationalPublication No. WO 2010/099132 A2 describing articles such as antennas,electromagnetic interference shields and touch screen sensors having alight transparent substrate and two conductive meshes, each havinglinear traces, where the first mesh overlays a second mesh in a certainconfiguration so as to minimize the traces' visibility.

Others have attempted to use ambient light reducing members such as anoptical interference member. See PCT International Publication No. WO2003/105248 disclosing an optical interference member including asemi-absorbing member layer for reflecting a portion of incident ambientlight, a substantially transparent layer for phase shifting anotherportion of ambient light and a reflective layer for reflecting the phaseshifted ambient light such that the two reflected portions of light areout-of-phase and thereby destructively interfere.

SUMMARY

There is a desire to improve the visual appearance of the metal-basedconductor meshes, in terms of reducing their visibility, when the meshis integrated into a display and viewed under reflected, collimatedlight, such as in direct sunlight.

The present disclosure provides articles using substrates havingnanostructured surface in combination with designs of conductormicropatterns. When integrated into a display or device, the combinationreduces the undesirable visual effects, such as starburst, sparkle, haloand rainbow, when the display or device is viewed under light, includingbut not limited to collimated or nearly collimated light, such assunlight.

Useful substrates have a nanostructured surface formed by severalmethods discussed herein. These methods include reactive ion etching afirst major surface of the substrate or forming a structured particulatecoating on a major surface of the substrate. Useful conductormicropattern designs include those having linear traces and non-lineartraces, or those having non-repeating cells, or those where the cells ofthe micropattern do not lie on an array or those that have a uniformdistribution of trace orientation, which are described herein.

In one aspect, the present disclosure provides for an articlecomprising: (a) a substrate having a first nanostructured surface thatis antireflective when exposed to air and an opposing second surface and(b) a metallic conductor disposed on the first surface of the substrate,the conductor formed by a plurality of traces defining a plurality ofopen area cells, wherein each cell has an open area fraction greaterthan 80% and a uniform distribution of trace orientation, wherein thetraces of the conductor have a specular reflectance in a directionorthogonal to and toward the first surface of the substrate of less than50%, and wherein each of the traces has a width from 0.5 to 10micrometer.

In another aspect, the present disclosure provides for an articlecomprising a transparent substrate having a first nanostructured surfaceand a metallic conductor disposed on the first nanostructured surface,wherein the first nanostructured surface comprises nanofeatures having aheight from 50 to 750 nanometers, a width from 15 to 200 nanometers, anda lateral spacing from 5 to 500 nanometers and wherein the conductor hasan average thickness of greater than 50 nanometers.

In yet another aspect, the present disclosure provides a method ofmaking a micropattern comprising the steps of: (a) providing a substratehaving a first surface and an opposing second surface; (b) modifying thefirst surface of the substrate to include nanofeatures having a heightfrom 50 to 750 nanometers, a width from 15 to 200 nanometers, and alateral spacing from 5 to 500 nanometers conductor with an averagethickness of greater than 50 nanometers; (c) depositing a metallicconductor on the first surface including the nanofeatures; (d) printinga self-assembled monolayer micropattern on the conductor using anelastomeric stamp; and (e) etching the conductor not covered by theself-assembled monolayer micropattern to yield a conductor micropatternaccording to the self-assembled monolayer micropattern.

In yet another aspect, the present invention provides an articlecomprising a transparent substrate having a first nanostructured surfaceand a conductor in the form of a micropattern disposed on the firstnanostructured surface; wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 250 nanometers, awidth from 15 to 150 nanometers, and a lateral spacing from 10 to 150nanometers; wherein the metallic conductor has an average thickness ofgreater than 50 nanometers; wherein the micropattern is formed by aplurality of traces defining a plurality of open area cells; wherein themicropattern has an open area fraction greater than 80%; wherein each ofthe traces has a width from 0.5 to 3 micrometers; wherein thenanostructured surface comprises a matrix and a nanoscale dispersedphase; wherein the nanoscale dispersed phase comprises nanoparticleshaving particle size from 10 to 250 nanometers; and wherein thenanoparticles are present in the matrix at a volume percent from 10 to75%.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure can be further described with reference to the followingdrawings, wherein:

FIG. 1 is a top plan view of a schematic of a regular hexagonalmicropattern;

FIG. 2 is a top plan view of a schematic of a portion of a polygonalmicropattern, referred to herein as a pseudorandom hexagonalmicropattern;

FIG. 3 is a top plan view of a schematic of a first illustrativenon-linear micropattern design, based on a regular hexagon, and referredto herein as a partially curved hexagon micropattern;

FIG. 3a is an exploded view of a few cells of the micropattern of FIG.3;

FIG. 4 is a top plan view of a schematic of a second illustrativenon-linear micropattern design, based on a regular hexagon, and referredto herein as a fully curved hexagon micropattern;

FIG. 4a is an exploded view of a few cells of the micropattern of FIG.4;

FIG. 5 is a top plan view of a third illustrative non-linearmicropattern, a pseudorandom curved design;

FIG. 6 shows a cell in a micropattern illustrating a measurement methodto determine an orientation of a trace;

FIG. 7 shows a histogram of the orientation of normals to the tracesegments for the micropattern of FIG. 1;

FIG. 8 shows a histogram of the orientation of normals to the tracesegments for the pseudorandom hexagonal micropattern, a portion of whichis illustrated in FIG. 2;

FIG. 9 shows a histogram of the orientation of normal to the tracesegments for the partially curved hexagonal micropattern, a portion ofwhich is shown in FIG. 3;

FIG. 10 shows a histogram of the angular distribution of the traceorientations for the fully curved hexagonal micropattern, a portion ofwhich is shown in FIG. 4;

FIGS. 11, 11 a and 11 b show various portions of a first micropatternedsubstrate useful for integration into a device, such as a display;

FIGS. 12, 12 a and 12 b show various portions of a second micropatternedsubstrate useful for integration into a device, such as a display;

FIG. 13 shows the overlay of the first and second micropatternedsubstrates that can be integrated into a device;

FIG. 14 is a top plan view of a third illustrative non-linearmicropattern, referred to herein as a fully curved square micropattern;and

FIG. 15 shows a schematic cross section of metallized nanostructuredsubstrate surface made via reactive ion etching;

FIG. 16 is a schematic view of an exemplary process for making anexemplary nanostructured substrate comprising a structured particlecoating, as described herein;

FIG. 17A is a schematic view of an exemplary process for making anexemplary nanostructured material described herein;

FIG. 17B is a schematic view of a polymerization section of FIG. 17A;

FIG. 17C is a schematic view of two uncoupled polymerization sections inseries of FIG. 17A;

FIG. 18 is a plan view scanning electron photomicrograph of thenanostructured surface of the substrate of Example 15 (beforemetallization), prepared by reactive ion etching;

FIG. 19 is a cross-sectional transmission electron photomicrograph ofthe metallized nanostructured surface of the substrate of Example 15(after metallization);

FIG. 20 is a cross-sectional scanning electron photomicrograph of themetallized nanostructured surface of the substrate of Example 15 (aftermetallization);

FIG. 21 is a plan view scanning electron photomicrograph of thenanostructured surface of the substrate of Example 112 (beforemetallization);

FIG. 22 is a plan view scanning electron photomicrograph of thenanostructured surface of the substrate of Example 112 (aftermetallization);

FIG. 23 is a cross-sectional view scanning electron photomicrograph ofthe nanostructured surface of the substrate of Example 112 (aftermetallization);

FIG. 24 is a cross-sectional view transmission electron photomicrographof the nanostructured surface of the substrate of Example 112 (aftermetallization), including measurements of silver metallization overlayerthickness and penetration; and

FIG. 25 is a transmission optical photomicrograph of selected tracesfrom the mesh of Example 126.

These figures are not drawn to scale and are intended for illustrativepurposes.

DETAILED DESCRIPTION

Unless otherwise indicated, all numbers expressing feature sizes,amounts and physical properties used in the specification and claims areto be understood as being modified in all instances by the term “about.”Accordingly, unless indicated to the contrary, the numerical parametersset forth in the foregoing specification and attached claims areapproximations that can vary depending upon the desired propertiessought to be obtained by those skilled in the art using the teachingsdisclosed herein.

The recitation of numerical ranges by endpoints includes all numberswithin that range (e.g., 1 to 5 includes, 1, 1.5, 2, 2.75, 3, 3.80, 4and 5) and any range within that range.

As used herein “micropattern” refers to an arrangement of dots, traces,filled shapes, or a combination thereof, each having a dimension (e.g.trace width) of no greater than 1 mm. In preferred embodiments, themicropattern is a mesh formed by a plurality of traces defining aplurality of cells, each trace having a width of at least 0.5 micronsand typically no greater than 20 microns. The dimension of themicropattern features can vary depending on the micropattern selection.In some favored embodiments, the micropattern feature dimension (e.g.trace width) is less than 10, 9, 8, 7, 6, or 5 micrometers (e.g. 1 to 3micrometers). Linear and non-linear traces are useful in the presentdisclosure.

As used herein, “visible light transparent” refers to the level oftransmission of the unpatterned substrate or of the article comprisingthe micropatterned substrate being at least 60 percent transmissive toat least one polarization state of visible light, where the percenttransmission is normalized to the intensity of the incident, optionallypolarized light. It is within the meaning of visible light transparentfor an article that transmits at least 60 percent of incident light toinclude microscopic features (e.g., dots, squares, or traces withminimum dimension, e.g. width, between 0.5 and 10 micrometers, between0.5 and 5 micrometers, or between 1 and 5 micrometers) that block lightlocally to less than 60 percent transmission (e.g., 0 percent); however,in such cases, for an approximately equiaxed area including themicroscopic feature and measuring 1000 times the minimum dimension ofthe microscopic feature in width, the average transmittance is greaterthan 60 percent. The term “visible” in connection with “visible lighttransparent” is modifying the term “light,” so as to specify thewavelength range of light for which the substrate or micropatternedarticle is transparent.

As used herein, “open area fraction” (or open area or percentage of openarea) of a conductor micropattern, or region of a conductormicropattern, is the proportion of the micropattern area or region areathat is not shadowed by the conductor. The open area is equal to oneminus the area fraction that is shadowed by the conductor micropattern,and may be expressed conveniently, and interchangeably, as a decimal ora percentage. Area fraction that is shadowed by conductor micropatternis used interchangeably with the density of a conductor micropattern(e.g., density of traces that define a mesh). Illustrative open areafraction values useful in the present disclosure are those greater than50%, greater than 75%, greater than 80%, greater than 90%, greater than95%, greater than 96%, greater than 97%, greater than 98%, greater than99%, 99.25 to 99.75%, 99.8%, 99.85%, 99.9% and even 99.95. In someembodiments, the open area of a region of the conductor micropattern(e.g., a visible light transparent conductive region) is between 80% and99.5%, in other embodiments between 90% and 99.5%, in other embodimentsbetween 95% and 99%, in other embodiments between 96% and 99.5%, inother embodiments between 97% and 98%, and in other embodiments up to99.95%.

As used herein, “trace” refers to the geometric element given by theintersection of two planes or by the intersection of a plane and anon-planar surface. The geometric element given by the intersection oftwo planes is described herein as linear (or, as a linear trace). Thegeometric element given by the intersection of a plane and a non-planarsurface is described herein as non-linear (or, as a non-linear trace). Alinear trace has zero curvature, or stated differently it has infiniteradius of curvature. A non-linear trace has non-zero curvature, orstated differently it has a finite radius of curvature. Curvature orradius of curvature can be determined for any point along a trace, as isknown in analytic geometry. Also, a normal can be constructed at a pointthat lies on a linear or non-linear trace, as is also known in analyticgeometry.

As used herein, “antireflective” refers to the behavior of a surface orcoating that reduces Fresnel light reflection at the interface between amaterial and a surrounding medium to which the material is exposed, andenhances light transmission through the interface. When the mediumsurrounding a material is air, and the surface or coating reduces thereflection at the interface that the material makes with air, suchsurfaces are described herein to be antireflective when exposed to air.In the absence of an antireflective surface or coating, Fresnelreflection is governed by the difference between refractive indices ofthe material and the surrounding medium, as is known in the art.

As used herein, “nanostructured” refers to a surface that includestopography in the form of nanofeatures, wherein the nanofeaturescomprise material that define the surface, and wherein at least one ofthe height of nanofeatures or the width of nanofeatures is less thanabout a micron (i.e., a micrometer, or 1000 nanometers).

Micropattern Designs

A number of different geometries or designs can be used for conductormicropatterns useful for present disclosure. The classes of meshmicropattern design include: (A) those with repeating cell geometry, (B)those with non-repeating cell geometry, (C) those with cells havingcentroids that do not lie on a repeating array, (D) those that havecells where the traces have a uniform distribution of trace orientation.These classes are not mutually exclusive. Within each of these classes,the traces can be linear or non-linear (i.e., having some finite radiusof curvature). The mesh micropatterns described below are not limitedwith respect to the width of traces or the sizes of cells. In someembodiments, the traces have a width in the range of 0.1 to 20micrometers, in some embodiments in the range of 0.5 to 10 micrometers,in some embodiments in the range of 0.5 to 5 micrometers, in someembodiments in the range of 0.5 to 4 micrometers, in some embodiments inthe range of 0.5 to 3 micrometers, in some embodiments in the range of0.5 to 2 micrometers, in some embodiments from 1 to 3 micrometers, insome embodiments in the range of 0.1 to 0.5 micrometers. In someembodiments, the open area of a region of the mesh conductormicropattern (e.g., a visible light transparent conductive region) isbetween 80% and 99.5%, in other embodiments between 90% and 99.5%, inother embodiments between 95% and 99%, in other embodiments between 96%and 99.5%, in other embodiments between 97% and 98%, and in otherembodiments up to 99.95%.

(A) Micropatterns with Repeating Cells

A characteristic of repeating cell geometries is that the cells lie on arepeating array. For cells to lie on a repeating array, what meant isthat the centroids of the cells lie no greater than a short distanceaway from positions that define the array (under the limit that there beonly one array position per cell). This description of the positionalrelationship of cells focuses on the open areas (or openings) of themesh cells, not on the traces or the trace junctions (vertices) of themesh. In some instances where cells lie on a repeating array, thecentroids of the cells lie precisely on the array of points (i.e.,positions). By arrays, what is meant is an arrangement of positions intwo-dimensions (i.e., in the plane of the micropattern) characterized bydiscrete translational symmetry for a unit cell comprising no more thanpositions. The translational symmetry of the array is defined in termsof one or more basis vectors that define the minimum translation withinthe plane of the micropattern over which the array is invariant. In thiscontext, arrays can include square arrays (or square lattices),rectangular arrays (or rectangular lattices), or triangular arrays (ortriangular lattices), for example. By a short distance, as this termrelates to the allowance for centroids of a mesh comprising cells thatare described herein to lie on a repeating array to be displaced fromthe precise positions of the array, what is meant is a distance lessthan 50% of the value given by taking the length of the shortest arraybasis vector that can be constructed in the orientation of thedisplacement and dividing that length by the number of array positionsin the unit cell that is associated with that basis vector. In someembodiments where the cells lie on a repeating array, the distance bywhich the centroids are displaced from the positions of the array isless than 25% of the value given by taking the length of the shortestarray basis vector that can be constructed in the orientation of thedisplacement and dividing that length by the number of array positionsin the unit cell that is associated with that basis vector. Illustrativeexamples of these types of micropatterns are shown in FIGS. 1, 3, 4 and14.

Turning now to the figures, FIG. 1 shows a top plan view of anillustrative geometry of a regular hexagonal conductor micropattern 10that is formed by a plurality of linear traces 12. Six traces, 12 athrough 12 f, form a cell 14 having an open area. As shown, each traceis of substantially equal length and each of the six internal angles isof substantially 120°. The centroids of the mesh cells lie on atriangular lattice (or array). The distance from the centerline of atrace defining one edge of the hexagonal cell to the centerline of the(parallel) trace defining the opposite edge of the hexagonal cell is,for example, 200 micrometers.

FIG. 3 shows a top plan view of an illustrative geometry of a non-lineardesign, i.e., a partially curved hexagonal conductor micropattern 30formed by a plurality of curved traces 32 defining a plurality of openarea cells 34. In one method, this micropattern design can be generatedstarting from the regular hexagonal micropattern design shown in FIG. 1and displacing the midpoint of each trace by some distance, e.g., by 10micrometers, and allowing the trace to bow. FIG. 3a shows a magnifiedcell 34′ with six traces, 32 a through 32 f shown. One characteristic ofthe micropattern 30 is that tangents 36 a and 36 c for traces 32 a and32 c respectively are generally not parallel to one another. Similarlyto the mesh micropattern of FIG. 1, the centroids of the mesh cells ofFIG. 3 lie on a triangular lattice of points (i.e., array of points).

FIG. 4 shows a top plan view of an illustrative geometry of anothernon-linear design, a fully curved hexagonal conductor micropattern 40formed by a plurality of curved traces 42 defining a plurality of cells44. In one method, this micropattern design can be generated bydecreasing the radius of curvature of the traces shown in FIG. 3 by,e.g., further displacing the midpoints of each trace. FIG. 4a shows amagnified cell 44′ with six traces, 42 a through 42 f. Onecharacteristic of the micropattern 40 is that tangents 46 a and 46 c fortraces 42 a and 42 c respectively are generally parallel to one another.Similarly to the mesh micropattern of FIG. 1, the centroids of the meshcells of FIG. 4 lie on a triangular lattice of points (i.e., array ofpoints).

FIG. 14 shows another exemplary non-linear micropattern design 240 thatcan be generated starting from a square and displacing the midpoint ofeach side of the square by some distance, and allowing the trace to bow.Four traces, 242 a to 242 d are shown defining open area cells 244. Thecentroids of the mesh cells of FIG. 14 lie on a square lattice (i.e.,array of points).

(B) Micropatterns with Non-Repeating Cells

For mesh micropatterns having a non-repeating cell geometry, the cellsmay lie on a repeating array (e.g., a rectangular array, a square array,or a triangular array) or they may not. In this cell geometry, the cellsare not of the same size and the same shape. An illustrative example ofthis type of cell geometry is shown in FIG. 2.

FIG. 2 shows a top plan view of an illustrative geometry of apseudorandom hexagonal conductor micropattern 20 formed by plurality oflinear traces 22 defining a plurality of cells 24. In one method, thismicropattern design can be generated by starting from the regularhexagonal pattern design shown in FIG. 1 and displacing the vertices ina randomized direction and by a randomized distance less than the edgelength of the original hexagonal cell, and maintaining linear traces.One characteristic of the micropattern 20, when generated by displacingvertices by a distance less than the edge length of the originalhexagonal cell (e.g., by a distance less than half of the edge length),is that the centroids of the cells lie within a short distance from thepoints of an array defined by the original centroid locations of thecells of the mesh of FIG. 1. More specifically the centroids of thecells of the mesh of FIG. 2 lie within a distance equal to 50% of theminimum separation between array positions defined by the centroids ofthe original mesh of FIG. 1 (i.e., 50% of the length of a basis vectorin the direction of the displacement, for triangular lattice defined bythe hexagonal mesh cell centroids). This result is due to the fact thatthe centroid of each original mesh cell opening of FIG. 1 has not beendisplaced substantially by the procedure of slightly moving thevertices. In this case, the cells are referred to herein as lying on anarray. In some embodiments disclosed later herein, the locations ofcentroids (not just the locations of vertices) are also specified to berandomized.

(C) Micropatterns with Cells not on an Array

As defined above, if the cells of a mesh micropattern are arranged intwo dimensions in such a way that the centroids of the cells lie nogreater than a short distance from positions that define an array, thenthe mesh cells are regarded herein to lie on a repeating array (or on anarray). In some instances where cells lie on a repeating array, thecentroids of the cells lie precisely on the array of points. Acharacteristic of a micropattern having cells not on a repeating array(i.e., not lying on a repeating array), as the term is used herein, isthat the centroids of the mesh cells (i.e., centroids of the cellopenings) are arranged in such a way that no array of positions can beconstructed using a unit cell comprising four or fewer positions, suchthat all of the centroids of the mesh lie within a distance less than50% of the value given by taking the length of the shortest array basisvector that can be constructed in the orientation of the displacementand dividing by the number of array positions in the unit cell that isassociated with that basis vector (under the additional limitation thatthere be only one array position per mesh cell). For this meshmicropattern, the cells are generally not of the same size and shape. Ofthe three micropatterns discussed thus far (A, B, and C), the C-typemicropattern has a higher degree of disorder. An illustrative example ofthis type of cell geometry is shown in FIG. 5.

FIG. 5 shows a top plan view of a portion of yet another non-lineardesign, a pseudorandom curved conductor micropattern 50 formed by aplurality of traces 52 defining a plurality of open area cells 54. Thisgeometry includes cells defined by curved conductive traces, each havingan exemplary width of 2 micrometers. The cells of a conductormicropattern with the pseudorandom curved design may have a varyingnumber of edges or traces that define the cells, e.g., from four toeight edges. The sizes of the cells vary from an area of 10,000 squaremicrometers to an area of 70,000 square micrometers. For reference, thearea of the regular hexagonal micropattern of FIG. 1 is 35,000 squaremicrometers. The positions of the cells, e.g., as defined by thecentroid of each cell, do not lie on a regularly spaced array.

D. Micropatterns with Uniform Distribution of Trace Orientation

A characteristic of this type of micropattern is that it is not limitedin terms of a cell geometry or in terms of the position of the centroidsof cells. To better describe this type of micropattern geometry, theconcept of angular distribution of trace orientation is used.

Angular Distribution of Trace Orientations

Each trace design can be characterized by an angular distribution oftrace orientations, as further described herein. The angulardistribution of trace orientations for the pseudorandom curved designsherein, as measurable according to a procedure described herein and overan area of 1 centimeter by 1 centimeter, is substantially uniform. Forexample, in some embodiments, with respect to the uniformity of thedistribution, no reference orientation can be established within theplane of the micropattern for which there are no normals to tracesegments in the micropattern that exist within plus or minus 10 degreesof that reference orientation. In some cases, no reference orientationcan be established within the plane of the micropattern for which thereare no normals to trace segments in the micropattern that exist withinplus or minus 5 degrees of that reference orientation. In some cases, noreference orientation can be established within the plane of themicropattern for which there are no normals to trace segments in themicropattern that exist within plus or minus 2 degrees of that referenceorientation. Further with respect to the uniformity of the distribution,over, e.g., 1 centimeter by 1 centimeter area, there are no two 20°ranges of orientation in the plane of the micropattern for which theintegrated density of the normals to the trace segments in the tworanges is different by more than 50% of the smaller of the twointegrated density values. In some cases, over, e.g., 1 centimeter by 1centimeter area, there are no two 20° ranges of orientation in the planeof the micropattern for which the integrated density of the normals tothe trace segments in the two ranges is different by more than 25% ofthe smaller of the two integrated density values. In some cases, over,e.g., 1 centimeter by 1 centimeter area, there are no two 20° ranges oforientation in the plane of the micropattern for which the integrateddensity of the normals to the trace segments in the two ranges isdifferent by more than 10% of the smaller of the two integrated densityvalues. In some cases, over, e.g., 1 centimeter by 1 centimeter area,there are no two 10° ranges of orientation in the plane of themicropattern for which the integrated density of the normals to thetrace segments in the two ranges is different by more than 10% of thesmaller of the two integrated density values. In some cases, over, e.g.,1 centimeter by 1 centimeter area, there are no 5° ranges of orientationin the plane of the micropattern for which the integrated density of thenormals to the trace segments in the two ranges is different by morethan 10% of the smaller of the two integrated density values.

The micropatterns of the present disclosure provide for the simultaneousminimization of a large number of potentially undesirable visualfeatures with have been observed for other micropatterns, especiallywhen combined with an information display (e.g., on a mobile phone,smart phone, tablet computer, laptop computer, desktop computer monitor,reading device, automotive display, or retail display). Thesepotentially undesirable visual features include starburst, rainbow, andsparkle, as already described. The potentially undesirable features thatare mitigated by the micropattern designs also include moiréinterference with the pixel pattern of the display. The potentiallyundesirable features that are mitigated by the micropattern designs alsoinclude substantial blockage (e.g., 25%, 50%, or even 75%) of theviewability of individual pixels of the display (obscuring theinformation, but not necessarily leading to a moiré pattern). It iswithin the scope of this disclosure for the micropattern to be tilted(e.g., rotated or biased) with respect to a display, in order tooptimize the mitigation of one or more of the potentially undesirablevisual features. Tilting of the micropattern can be especially usefulfor minimizing moiré interference with a pixilated display. In somecases, a four-sided cell geometry, distributed on a square array ofpositions (e.g., fully curved square cell geometry) is convenient forminimization of moiré interference though tilting.

The orientations of the population of traces useful in the presentdisclosure can be quantified as a distribution that describes therelative concentration, presence, or abundance of trace segments ofdifferent orientations within the micropattern. This distribution can beused to describe the orientations of the population of traces inmicropatterns that comprise linear traces or non-linear traces. Also, itcan be used to describe the orientations of the population of traces inmicropatterns that comprise repeating geometries (e.g., as in the caseof a square or hexagonal micropattern) or in micropatterns that comprisenon-repeating geometries (e.g., as in the case of pseudorandommicropattern designs comprising linear (as in FIG. 2) or non-linear (asin FIG. 5) traces. The descriptor is the integrated micropattern tracelength per unit area of micropattern, as a function of the orientationof a normal to the trace. Stated in another way, the descriptor can beexpressed as the frequency distribution of orientations for tracesegments (or the distribution of orientations of normals to the tracesegments) that form a conductor micropattern. By “integrated,” what ismeant is the summation of total trace width for traces within a definedarea that have the specified orientation.

In order to collect the above described frequency characteristics fororientations within conductor micropatterns having non-linear traces,the following procedure can be used. The procedure includes a series ofmanual drawing and measurement steps for a magnified print of themicropattern design on, for example, 11 inch by 17 inch paper. Thecharacterization procedure include the steps of (a) printing a magnifiedrendering of the micropattern on paper, (b) partitioning the traces ofthe micropattern into at least 200 segments of approximately equal pathlength, (c) manually drawing a normal to each segment, (d) establishingan orientation frame of reference by establishing a 0° direction, andthen (e) measuring the orientation of every normal with respect to the0° direction (e.g., using a protractor). The traces, and thus thenormals to the traces, can be specified using 180° of angular range forthe following reason. A trace that runs straight up and down can bearbitrarily described to be oriented up or down. A trace or its normalthat is oriented upward is no different from a trace or its normal thatis oriented downward. Thus, one cannot generate a trace that is orientedupward in any way different from a trace that is oriented downward(i.e., there is no meaning to a suggestion that the upward trace isdifferent from the downward trace). Thus, the full range of possibletrace segment orientations requires only 180° of angular range.

FIG. 6 shows a diagram of one full cell of the embodiment of FIG. 4where angle of a normal to a trace orientation is being measured attrace segment P₁. For purposes of simplicity, only one of the 200segments is shown. A normal line N to the trace segment P₁ is drawn asshown in the figure. A tangent line T is drawn intersecting both tracesegment P₁ and normal line N. A reference zero degree line is drawn asshown by a dashed arrow. An angle theta (θ) can then be measured todetermine the angle between the reference line and the normal line. Thismeasurement is then repeated multiple times for segments similar to P₁along each of the six traces. An arbitrary, but sufficiently largenumber of segments (in this case, 200 segments for statisticallysignificant measurement) can be drawn for the cell. An approximatelyequal number of segments is drawn for each of the six traces.

The so-measured distribution of the orientation of the normal to a tracesegment can be rendered by plotting a histogram of the orientationmeasurements. It should be noted that the distribution of theorientation of the normal to a trace segment provides a directcorrelation to the distribution of the orientation of the trace segmentitself. For micropatterns herein, the procedure was carried out for thetraces making up at least one complete cell of the micropattern. Formicropatterns having a single cell shape and size, replicated in twodirections in order to yield a two-dimensional micropattern,characterization of the traces that make up a single cell is adequate todetermine the distribution of trace orientations for the two dimensionalmicropattern over larger areas (for example over areas covering 10, 100,or even 1000 cells). For example, characterization of the traces thatmake up a single regular hexagonal cell measuring 200 micrometers indiameter is adequate to determine the distribution of trace orientationsfor a regular hexagonal micropattern of such cells measuring 1millimeter by 1 millimeter, 1 centimeter by 1 centimeter, or even 1meter by 1 meter. For micropatterns having multiple cell shapes orsizes, a sufficient number of cells should be characterized in order todetermine the distribution of trace orientations for the overallmicropattern with useful accuracy (e.g., where the so-measureddistribution of trace orientations exhibits an R² correlationcoefficient of at least 0.8, at least 0.9, at least 0.95, or even atleast 0.99 when compared with the actual distribution of traceorientations over an area of the actual conductor micropattern of 1millimeter by 1 millimeter, 1 centimeter by 1 centimeter, or even 1meter by 1 meter).

Once the orientations of normals (represented by the angle θ) to thetrace segments are measured, they can be binned into two micron binsthereby generating 90 bins from 0 to 180 degrees. Each bin includes aninteger representing the number of measurements that yielded anorientation within the bin's two degree angular range. This binningprocedure produces a discrete distribution of orientations. Finally, thestandard deviation of the frequency values (standard deviation ofmeasured frequency per 2 degree bin) can be calculated. For somedistributions of the normal to the trace segment, and thus thedistribution of trace orientation described herein to be considereduniform, the so calculated standard deviation is less than four. Forsome distributions of trace orientations described herein as uniform,the so calculated standard deviation is less than three. For somedistributions of trace orientations described herein as uniform, the socalculated standard deviation is less than two. For some distributionsof trace orientations therein uniform, the so calculated standarddeviation is less than one.

FIG. 7 shows a histogram of the angle θ for the multiple trace segmentsof the micropattern of FIG. 1, regular hexagon. Three distinct peaksresult at three angles, each angle being about 60 degree apart from theother peak. It should be noted that the absolute value of the angleshown on the x-axis of the histogram is arbitrary in that the threepeaks can occur at other angles, such as 40°, 100° and 160°, so long asthey are about 60° apart. The three peaks result because, with referenceto FIG. 1, the orientation angle for the normals would be the same fortraces 12 a as 12 d, 12 b as 12 e and 12 c as 12 f. For thismicropattern, the standard deviation of measured frequency per 2 degreebin was measured as 11.6, a direct indication of the highly non-uniform.

FIGS. 8, 9 and 10 show histograms of the angle θ for the pseudorandomhexagon micropattern of FIG. 2, the partially curved micropattern ofFIG. 3, and the fully curved micropattern of FIG. 4 respectively. Eachof these histograms has a broader distribution of angle θ as compared tothe histogram for the micropattern of FIG. 1, with the histogram of FIG.10 having the most uniform distribution of the four micropatterns.Furthermore, the standard deviation of these histograms is 1.6 (FIG. 8),2.6 (FIG. 9) and 1.0 (FIG. 10).

Further describing the distribution of trace segment orientations withina conductor micropattern having non-linear traces, it is within thescope of a micropattern described herein to have a uniform distributionand yet have some orientations or small ranges of orientations notrepresented in the distribution. That is, a micropattern having anabsolutely uniform distribution of trace or trace segment orientationsacross all 180° of possible orientations within a given area of themicropattern would not be removed from the scope of micropatternsdescribed herein to have a “uniform distribution” by removal of a singletrace (or trace segment) or by removal of all traces within a narrowrange of angles, for example over a 5° range of angles, or for exampleover a 2° range of angles.

With reference to the procedure described above for measuring(approximately 200 measurements) and binning (2° bins) the frequenciesof fractional trace segment orientations, the pseudorandom curvedmicropattern (FIG. 5) may have a standard deviation of measuredfrequency per 2° bin of less than 5, less than 3, less than 2, 1, oreven less than 1.

In addition to the uniformity of the distribution of trace segmentorientations, the geometry of the conductor micropatterns of the presentdisclosure can be described in terms of the radius of curvature of thetraces. In some cases, the radii of curvature for traces comprising amicropattern are less than 1 centimeter. In some cases the radii ofcurvature for substantially all of the traces comprising the meshpattern are less than 1 centimeter. In some cases the radii of curvaturefor traces comprising a micropattern are less than 1 millimeter. In somecases, the radii of curvature for substantially all of the tracescomprising the micropattern are less than 1 millimeter. In some cases,the radii of curvature for traces comprising a mesh pattern are between50 microns and 1 millimeter. In some cases, the radii of curvature forsubstantially all of the traces comprising the micropattern are between50 microns and 1 millimeter. In some cases, the radii of curvature fortraces comprising a micropattern are between 75 microns and 750 microns.In some cases, the radii of curvature for substantially all of thetraces comprising the micropattern are between 75 microns and 750microns. In some cases, the radii of curvature for traces comprising amesh pattern are between 100 microns and 500 microns. In some cases, theradii of curvature for substantially all of the traces comprising themicropattern are between 100 microns and 500 microns. In some cases, theradii of curvature for traces comprising a micropattern are between 150microns and 400 microns. In some cases the radii of curvature forsubstantially all of the traces comprising the micropattern are between150 microns and 400 microns.

Conductor Types

We turn now to the types of conductors useful for the presentdisclosure. Examples of useful metals for forming the electricallyconductive micropattern include gold, silver, palladium, platinum,aluminum, copper, molybdenum, nickel, tin, tungsten, alloys, andcombinations thereof. Optionally, the conductor can also be a compositematerial, for example a metal-filled polymer.

Conductive micropatterns may comprise dots, traces, filled shapes, orcombinations thereof with defined specular reflectance, e.g., measuredat angle normal to the micropattern. When a conductor micropattern isdisposed on a substrate surface that is nanostructured andantireflective (and preferably very low haze, e.g., less than 4%, lessthan 3%, less than 2%, less than 1%, or even less than 0.5%), theincidence of certain potentially undesirable visual features from themicropattern can be substantially diminished. The diminution can beespecially notable for viewing, imaging, or measurement of themicropattern from the direction facing the substrate nanostructuredsurface. The reflectance of the conductor micropattern can also bediminished by disposition on the substrate surface that isnanostructured and antireflective (and preferably very low haze asdescribed above), as compared with the reflectance for the identicallyfabricated micropattern on a flat, reflective substrate surface (surfaceof typical PET film). Furthermore, the conductor can be patterned usingmicrocontact printing (e.g., printing of a self-assembled monolayerpattern using an elastomeric stamp, followed by wet chemical etching)after disposition on the substrate surface that is nanostructured andantireflective (and preferably very low haze as described above),contrary to literature reports that suggest that a smooth substratesurface is critical for such a process. The specular reflectance ofsmooth thin film metals such as silver or aluminum may exceed 90% in thevisible spectrum. In some embodiments, the reflectance of traces formicropatterns formed by a plurality of traces defining a plurality ofcells (e.g., to define a micropattern) is less than 90%, measured atnormal incidence and in a direction oriented toward the surface of asubstrate onto which the traces are disposed. In some embodiments, thereflectance of traces for micropatterns formed by a plurality of tracesdefining a plurality of cells (e.g., to define a mesh) is less than 90%,measured at normal incidence and in a direction oriented away from thesurface of a substrate onto which the traces are disposed. In someembodiments, the reflectance of traces for micropatterns formed by aplurality of traces defining a plurality of cells (e.g., to define amesh) is less than 50%, measured at normal incidence and in a directionoriented toward the surface of a substrate onto which the traces aredisposed. In some embodiments, the reflectance of traces formicropatterns formed by a plurality of traces defining a plurality ofcells (e.g., to define a mesh) is less than 50%, measured at normalincidence and in a direction oriented away from the surface of asubstrate onto which the traces are disposed. In some embodiments, thereflectance of traces for micropatterns formed by a plurality of tracesdefining a plurality of cells (e.g., to define a mesh) is less than 20%,measured at normal incidence and in a direction oriented toward thesurface of a substrate onto which the traces are disposed. In someembodiments, the reflectance of traces for micropatterns formed by aplurality of traces defining a plurality of cells (e.g., to define amesh) is less than 10%, measured at normal incidence and in a directionoriented toward the surface of a substrate onto which the traces aredisposed. Specific means for reducing the reflectance (i.e., darkeningor blackening) of a non-transparent metallic conductor pattern are thesubject of the present disclosure. The means solve the problem of highreflectance for metallic deposits on substrates when the metallicdeposit is of relatively high optical density (i.e., metallic depositthat is not transparent, for example that transmits less than 5% visiblelight or even less than 1% visible light), and thus render the otherwisereflective, non-transparent metallic coatings, deposits, ormicropatterns darkened, dark, or blackened at their interface with theirsubstrate. The degree of darkening is indicated herein by the measuredreflectance from the non-transparent metal, and in particular itsinterface with a supporting substrate (e.g., nanostructured substrate),with lower reflectance from the non-transparent metal indicating greaterdarkening, and even blackening. These specific means have been found tobe optimally combined with micropattern design parameters (e.g., tracewidth from 0.5 to 10 micrometers, from 0.5 to 5 micrometers, from 0.75to 4 micrometers, or from 1 to 3 micrometers), conductor thickness(e.g., from greater than 0.05 to 2 micrometer, from greater than 0.05 to1 micrometer, 0.075 to 0.5 micrometer, or from 0.1 to 0.25 micrometer),and certain micropattern fabrication methods. The new means disclosedherein solve the challenge of reducing the reflectance of metallicmicropatterns having these designs. The presently disclosed designs andmethods differ from other known approaches for reducing the reflectanceof metallic deposits, e.g., partially reacting a metal surface toconvert it chemically to a light-absorbing compound. One example of thelatter, known approaches is partial conversion of a silver micropatternsurface to silver sulfide by exposure to hydrogen sulfide gas orsulfurated potash (liver of sulfur) solution. Similar procedures can becarried out to convert a copper surface to a black sulfide reactionproduct. The partial chemical conversion of metallic conductor deposits(e.g., metallic conductor micropatterns) to a light-absorbing reactionproduct is a general approach that is most suited for metallic conductorcoatings or patterns having thicknesses greater than 2 micrometers oreven greater than 5 micrometers, but poses challenges when attempted forthe substantial darkening of thinner metallic deposits. Although thenanostructured substrate designs described herein have been found to beparticularly well-suited for reducing the reflectance of conductor meshmicropatterns described above (trace width from 0.5 to 10 micrometers,from 0.5 to 5 micrometers, 0.5 to 4 micrometers, from 0.5 to 3micrometers, or from 1 to 3 micrometers; conductor thickness fromgreater than 0.05 to 2 micrometer, from greater than 0.05 to 1micrometer, from 0.075 to 0.5 micrometer, or from 0.1 to 0.25micrometer), they are also suitable for mesh micropatterns of metallicconductors wherein the mesh comprises traces with conductor thickness offrom about 2 to about 30 micrometer, or from about 3 to about 10micrometers. Also, they are suitable for mesh micropatterns of metallicconductors wherein the mesh comprises traces having width greater than10 micrometers, for example 10 to 20 micrometers, in combination withopen area fraction greater than 80 percent., greater than 90%, greaterthan 95%, greater than 96%, greater than 97%, greater than 98%, greaterthan 99%, 99.25 to 99.75%, 99.8%, 99.85%, 99.9% and even 99.95

In some embodiments, the metallic conductor (e.g., the metallicconductor micropattern) has a thickness greater than 50 nanometers, insome embodiments greater than 55 nanometers, in some embodiments greaterthan 60 nanometers, in some embodiments greater than 75 nanometers, andin some embodiments greater than 100 nanometers. In some embodiments,the thickness is in the range from 55 nanometers to 20 micrometers, insome embodiments in the range from 60 nanometers to 15 micrometers, insome embodiments in the range of 75 nanometers to 10 micrometers, insome embodiments in the range of 100 nanometers to 1 micrometer, in someembodiments in the range of 125 nanometers to 500 nanometers, and insome embodiments in the range 150 nanometers to 250 nanometers.

Substrates

Useful substrates that can be used in the present disclosure includeglass and polymeric materials. Useful polymeric materials includepolymeric films. A polymeric “film” substrate is a polymer material inthe form of a flat sheet that is sufficiently flexible and strong to beprocessed in a roll-to-roll fashion. Polymeric films used as substratesin articles described herein are sometimes referred to as base films. Byroll-to-roll, what is meant is a process where material is wound onto orunwound from a support, as well as further processed in some way.Examples of further processes include coating, slitting, blanking, andexposing to radiation, or the like. Polymeric films can be manufacturedin a variety of thicknesses, ranging in general from about 5 μm to 1000μm. In many embodiments, polymeric film thicknesses range from about 25μm to about 500 μm, or from about 50 μm to about 250 μm, or from about75 μm to about 200 μm. Roll-to-roll polymeric films may have a width ofat least 12 inches, 24 inches, 36 inches, or 48 inches. Useful polymericfilm substrates include, for example, poly(ethyleneterephthalate),poly(ethylenenaphthalate), polycarbonate, or cellulose triacetate.

The substrate surface can be modified to be nanostructured andantireflective when exposed to air by any suitable means. Ananostructured surface that is antireflective may be formed using anumber of methods, including embossing, molding, or interferencelithography, as is known in the art. A particularly effective method formodifying a surface to be nanostructured and antireflective when exposedto air is discussed below and uses a Reactive Ion Etching process.

Reactive Ion Etched Substrates

A particularly useful nanostructured surface prepared using a firstmethod, a reactive ion etching process to produce a random anisotropicnanostructured surface. Not all nanostructured surfaces areantireflective. And, not all nanostructured surfaces have low haze. Somenanostructured surfaces are strongly light-scattering, leading to haze(e.g., transmitted haze of greater than 5%).

FIG. 15 depicts a schematic cross section view of a metallizednanostructured substrate 250 made via reactive ion etching where S₁depicts the spacing between two nanofeatures defined by the reactive ionetching process and the positions of nanoparticles (dispersed phase) 252in a matrix 254, both of which are disposed on a surface of a substrate256. The width of a nanofeature is identified as W₁, and the height of ananofeature is identified as H₁. FIG. 15 includes a metallic conductor257 disposed upon (and penetrating the open, negative space of) thenanostructured substrate surface.

In one embodiment of a nanostructured surfaces that are antireflectivewhen exposed to air, the nanostructured articles (e.g., substrates)comprise a composite surface that is nanostructured and antireflectivewhen exposed to air can be formed with a matrix phase and a dispersedphase. For a material or article to comprise a composite surface, whatis meant is that the portion of the material that defines the surface(and thus includes a finite volume or material that is inside thesurface) is a composite material (i.e., a material comprising multiplephases, for example a matrix phase and a dispersed phase). For anarticle to comprise a composite surface, the article may consistentirely of the composite material or, for example, the article maycomprise one material that is not a composite (e.g., a polymeric basefilm), with a composite coating disposed thereon. The matrix, orcontinuous phase, can comprise polymeric material, inorganic material,or alloys or solid solutions (including miscible polymers). Reactive IonEtching of a material or coating comprising a matrix and a dispersednanoparticle phase yields can yield a nanostructured surface that isanisotropic (height of protrusive features is greater than lateraldimension of protrusive features) and random (positions of protrusivefeatures are not defined, for example periodic).

Useful polymeric materials include thermoplastics and thermosettingresins.

Suitable thermoplastics include, but are not limited to, polyethyleneterephthalate (PET), polystyrene, acrylonitrile butadiene styrene,polyvinyl chloride, polyvinylidene chloride, polycarbonate,polyacrylates, cellulose acetate, thermoplastic polyurethanes, polyvinylacetate, polyamide, polyimide, polypropylene, polyester, polyethylene,poly(methylmethacrylate), polyethylene naphthalate, styreneacrylonitrile, silicone-polyoxamide polymers, fluoropolymers, cyclicolefin copolymers, thermoplastic elastomers, and the like.

Suitable thermosetting resins include, but are not limited to, allylresin (including (meth)acrylates, polyester acrylates, urethaneacrylates, epoxy acrylates and polyether acrylates), epoxies,thermosetting polyurethanes, silicones or polysiloxanes, and the like.These resins can be formed from the reaction product of polymerizablecompositions comprising the corresponding monomers and or oligomers. Asused in this document, the term (meth)acrylate means acrylate ormethacrylate.

In one embodiment, the polymerizable compositions includes at least onemonomeric or oligomeric (meth)acrylate, preferably a urethane(meth)acrylate. Typically, the monomeric or oligomeric (meth)acrylate ismulti(meth)acrylate. The term “(meth)acrylate” is used to designateesters of acrylic and methacrylic acids, and “multi(meth)acrylate”designates a molecule containing more than one (meth)acrylate group, asopposed to “poly(meth)acrylate” which commonly designates (meth)acrylatepolymers. Most often, the multi(meth)acrylate is a di(meth)acrylate, butit is also contemplated to employ tri(meth)acrylates,tetra(meth)acrylates and so on.

Suitable monomeric or oligomeric (meth)acrylates include alkyl(meth)acrylates such as methyl acrylate, ethyl acrylate, 1-propylacrylate, methyl methacrylate and t-butyl acrylate. The acrylates mayinclude (fluoro)alkylester monomers of (meth)acrylic acid, the monomersbeing partially and or fully fluorinated, such as, trifluoroethyl(meth)acrylate.

Examples of commercially available multi(meth)acrylate resins includethe DIABEAM series from Mitsubishi Rayon Co., LTD.; the DINACOL seriesfrom Nagase & Company, Ltd.; the NK ESTER series from Shin-NakamuraChemical Co., Ltd.; the UNIDIC series from Dainippon Ink & Chemicals,Inc., the ARONIX series from Toagosei Co., LTD.; the BLENMER seriesmanufactured by NOF Corp.; the KAYARAD series from Nippon Kayaku Co.,Ltd., the LIGHT ESTER series and LIGHT ACRYLATE series from KyoeishaChemical Co., Ltd.

Oligomeric urethane multi(meth)acrylates may be obtained commercially,for example from Sartomer under the trade designation “Photomer 6000Series”, such as “Photomer 6010” and “Photomer 6020”, and also under thetrade designation “CN 900 Series”, such as “CN966B85”, “CN964” and“CN972”. Oligomeric urethane (meth)acrylates are also available fromSurface Specialties, such as available under the trade designations“Ebecryl 8402”, “Ebecryl 8807” and “Ebecryl 4827”. Oligomeric urethane(meth)acrylates may also be prepared by the initial reaction of analkylene or aromatic diisocyanate of the formula OCN—R3-NCO with apolyol. Most often, the polyol is a diol of the formula HO—R4-OH whereinR3 is a C2-100 alkylene or an arylene group and R4 is a C2-100 alkylenegroup. The intermediate product is then a urethane diol diisocyanate,which subsequently can undergo reaction with a hydroxyalkyl(meth)acrylate. Suitable diisocyanates include 2,2,4-trimethylhexylenediisocyanate and toluene diisocyanate. Alkylene diisocyanates aregenerally preferred. A particularly preferred compound of this type maybe prepared from 2,2,4-trimethylhexylene diisocyanate,poly(caprolactone)diol and 2-hydroxyethyl methacrylate. In at least somecases, the urethane (meth)acrylate is preferably aliphatic.

The polymerizable compositions can be mixtures of various monomers andor oligomers, having the same or differing reactive functional groups.Polymerizable compositions comprising two or more different functionalgroups may be used, including the following; (meth)acrylate, epoxy andurethane. The differing functionality may be contained in differentmonomeric and or oligomeric moieties or in the same monomeric and oroligomeric moiety. For example, a resin composition may comprise anacrylic or urethane resin having an epoxy group and or a hydroxyl groupin the side chain, a compound having an amino group and, optionally, asilane compound having an epoxy group or amino group in the molecule.

The thermosetting resin compositions are polymerizable usingconventional techniques such as thermal cure, photocure (cure by actinicradiation) and or e-beam cure. In one embodiment, the resin isphotopolymerized by exposing it to ultraviolet (UV) and or visiblelight. Conventional curatives and or catalyst may be used in thepolymerizable compositions and are selected based on the functionalgroup(s) in the composition. Multiple curatives and or catalysts may berequired if multiple cure functionality is being used. Combining one ormore cure techniques, such as thermal cure, photocure and e-beam cure,is within the scope of the present disclosure.

Furthermore, the polymerizable resins can be compositions comprising atleast one other monomer and or oligomer (that is, other than thosedescribed above, namely the monomeric or oligomeric (meth)acrylate andthe oligomeric urethane (meth)acrylate). This other monomer may reduceviscosity and/or improve thermomechanical properties and/or increaserefractive index. Monomers having these properties include acrylicmonomers (that is, acrylate and methacrylate esters, acrylamides andmethacrylamides), styrene monomers and ethylenically unsaturatednitrogen heterocycles.

Also included are (meth)acrylate esters having other functionality.Compounds of this type are illustrated by the 2-(N-butylcarbamyl)ethyl(meth)acrylates, 2,4-dichlorophenyl acrylate, 2,4,6-tribromophenylacrylate, tribromophenoxylethyl acrylate, t-butylphenyl acrylate, phenylacrylate, phenyl thioacrylate, phenylthioethyl acrylate, alkoxylatedphenyl acrylate, isobornyl acrylate and phenoxyethyl acrylate. Thereaction product of tetrabromobisphenol A diepoxide and (meth)acrylicacid is also suitable.

The other monomer may also be a monomeric N-substituted orN,N-disubstituted (meth)acrylamide, especially an acrylamide. Theseinclude N-alkylacrylamides and N,N-dialkylacrylamides, especially thosecontaining C1-4 alkyl groups. Examples are N-isopropylacrylamide,N-t-butylacrylamide, N,N-dimethylacrylamide and N,N-diethylacrylamide.The term “(meth)acrylamide” means acrylamide and methacrylamide.

The other monomer may further be a polyol multi(meth)acrylate. Suchcompounds are typically prepared from aliphatic diols, triols, and/ortetraols containing 2-10 carbon atoms. Examples of suitablepoly(meth)acrylates are ethylene glycol diacrylate, 1,6-hexanedioldiacrylate, 2-ethyl-2-hydroxymethyl-1,3-propanediol triacylate(trimethylolpropane triacrylate), di(trimethylolpropane) tetraacrylate,pentaerythritol tetraacrylate, the corresponding methacrylates and the(meth)acrylates of alkoxylated (usually ethoxylated) derivatives of saidpolyols. Monomers having two or more (ethylenically unsaturated groupscan serve as a crosslinker.

Styrenic compounds suitable for use as the other monomer includestyrene, dichlorostyrene, 2,4,6-trichlorostyrene, 2,4,6-tribromostyrene,4-methylstyrene and 4-phenoxystyrene. Ethylenically unsaturated nitrogenheterocycles include N-vinylpyrrolidone and vinylpyridine.

Constituent proportions in the radiation curable materials can vary. Ingeneral, the organic component can comprise about 30-100% monomeric andor oligomeric (meth)acrylate or oligomeric urethane multi(meth)acrylate,with any balance being the other monomer and or oligomer.

Commercially available liquid-resin based materials (typically referredto as “hardcoats”) may be used as the matrix or as a component of thematrix. Such materials include the PERMANEW series from CaliforniaHardcoating Co., San Diego, Calif. and the UVHC series harcoats fromMomentive Performance Materials, Albany, N.Y. Additionally, commerciallyavailable nanoparticle filled matrix may be used, such as NANOCRYL andNANOPDX from Nanoresins AG, Geesthacht Germany.

Additionally, nanoparticulate containing hardcoat films, such as THSseries from Toray Advanced Films Co., Ltd., Tokyo, Japan; the OpteriaHardcoated Films for FPD from Lintec Corp., Tokyo, Japan; the SonyOptical Film from Sony Chemical & Device Corp., Tokyo, JP; theHardcoated Film from SKC Haas, Seoul, Korea and the Terrappin G filmfrom Tekra Corp., Milwaukee, Wis., may be used in this disclosure.

Surface leveling agents may be added to the matrix. The leveling agentis preferably used for smoothing the matrix resin. Examples includesilicone-leveling agents, acrylic-leveling agents andfluorine-containing-leveling agents. In one embodiment, thesilicone-leveling agent includes a polydimethyl siloxane backbone towhich polyoxyalkylene groups are added.

Useful inorganic materials for the matrix include, for example, glasses,metals, metal oxides, and ceramics.

The dispersed phase (e.g., a nanoparticle dispersed phase) is adiscontinuous phase dispersed (e.g., randomly) within the matrix. Thenanoscale dispersed phase can comprise nanoparticles (for example,nanospheres), nanotubes, nanofibers, caged molecules, hyperbranchedmolecules, micelles, reverse micelles, or the like. Preferably, thedispersed phase comprises nanoparticles or caged molecules; morepreferably, the dispersed phase comprises nanoparticles. It is withinthe scope of the present disclosure for the dispersed phase to exhibitsome degree of order or organization within the matrix, for example atleast segregation (e.g., in a coating) toward a substrate base film oraway from a substrate base film.

Nanoparticles as the dispersed phase in a composite material suitablefor reactive ion etching preferably have a mean diameter in the rangefrom about 1 nm to about 200 nm, in some embodiments in the range fromabout 10 nm to 200 nm. In some embodiments, the nanoparticles have amean diameter in the range from about 20 to 100 nm. In some embodiments,the nanoparticles have a mean diameter of 5 nm, 20 nm, or 75 nm.Nanoparticles for the dispersed phase preferably comprise metal oxides,carbides, nitrides, borides, halides, fluorocarbon solids, or the like,or mixtures thereof. Preferred materials include SiO₂, ZrO₂, TiO₂, ZnO,calcium carbonate, magnesium silicate, indium tin oxide, antimony tinoxide, carbon, poly(tetrafluoroethylene), and the like. Preferably, thenanoparticles comprise SiO₂.

Nanoparticles can be present in the matrix in an amount from about 1% toabout 75%, or from about 5% to about 20% by volume. The relativecontents of the matrix phase and the dispersed phase in a compositematerial can be expressed in volume percent or in weight percent, as isknown in the art. Conversion of weight percent composition descriptionsto volume percent composition descriptions requires an accounting forthe density of each of the phases, as is readily done by those ofordinary skill in the art. Note that compositions of composite materialsare described herein in terms of the relative contents of the solidmaterial phases only, with no accounting for the possibility of pores(open or closed). It is within the scope of the compositions ofcomposites described herein for there also to be pores present. Theexpressions herein of the compositions of composites are limited todescription of only the solid phases contained in the composite, butthere may also be pores present. Silicas for use in the materials of thepresent disclosure are commercially available from Nalco Chemical Co.,Naperville, Ill. under the trade designation “Nalco Colloidal Silicas”such as products 1040, 1042, 1050, 1060, 2327 and 2329. Suitable fumedsilicas include for example, products commercially available from Evonikunder the trade designation, “Aerosil series OX-50”, as well as productnumbers −130, −150, and −200. Other colloidal silica can be alsoobtained from Nissan Chemicals under the designations “IPA-ST”,“IPA-ST-L”, and “IPA-ST-ML”. Fumed silicas are also commerciallyavailable from Cabot Corp., Tuscola, Ill., under the designations“CAB-O-SPERSE 2095”, “CAB-O-SPERSE A105”, and “CAB-O-SIL M5”. Zirconiasfor use in composition and articles of the invention are available fromNalco Chemical Co. under the trade designation “Nalco OOSSOO8”.

Surface-treating the nano-sized particles can provide a stabledispersion in the polymeric resin. Preferably, the surface-treatmentstabilizes the nanoparticles so that the particles will be welldispersed in the polymerizable resin and result in a substantiallyhomogeneous composition. Furthermore, the nanoparticles can be modifiedover at least a portion of its surface with a surface treatment agent sothat the stabilized particles can copolymerize or react with thepolymerizable resin during curing.

The nanoparticles are preferably treated with a surface treatment agent.In general, a surface treatment agent has a first end that will attachto the particle surface (covalently, ionically or through strongphysisorption) and a second end that imparts compatibility of theparticle with the resin and/or reacts with resin during curing. Examplesof surface treatment agents include alcohols, amines, carboxylic acids,sulfonic acids, phosphonic acids, silanes and titanates. The preferredtype of treatment agent is determined, in part, by the chemical natureof the metal oxide surface. Silanes are preferred for silica and otherfor siliceous fillers. Silanes and carboxylic acids are preferred formetal oxides such as zirconia. The surface modification can be doneeither subsequent to mixing with the monomers or after mixing. It ispreferred in the case of silanes to react the silanes with the particlesor nanoparticle surface before incorporation into the resins. Therequired amount of surface modifier is dependent on several factors suchas particle size, particle type, molecular weight of the modifier, andmodifier type.

Representative embodiments of surface treatment agents include compoundssuch as, for example, isooctyl tri-methoxy-silane,N-(3-triethoxysilylpropyl)methoxyethoxy-ethoxyethyl carbamate (PEG3TES),N-(3-triethoxysilylpropyl)methoxyethoxyethoxyethyl carbamate (PEG2TES),3-(methacryloyloxy)propyltrimethoxysilane,3-acryloxypropyltrimethoxysilane,3-(methacryloyloxy)propyltriethoxysilane,3-(methacryloyloxy)propylmethyldimethoxysilane,3-(acryloyloxypropyOmethyldimethoxysilane,3-(methacryloyloxy)propyldimethylethoxysilane,vinyldimethylethoxysilane, pheyltrimethaoxysilane,n-octyltrimethoxysilane, dodecyltrimethoxysilane,octadecyltrimethoxysilane, propyltrimethoxysilane,hexyltrimethoxysilane, vinylmethyldiactoxysilane,vinylmethyldiethoxysilane, vinyltriacetoxysilane, vinyltriethoxysilane,vinyltriisopropoxysilane, vinyltrimethoxysilane, vinyltriphenoxysilane,vinyltri-t-butoxysilane, vinyltris-isobutoxysilane,vinyltriisopropenoxysilane, vinyltris(2-methoxyethoxy)silane,styrylethyltrimethoxysilane, mercaptopropyltrimethoxysilane,3-glycidoxypropyltrimethoxysilane, acrylic acid, methacrylic acid, oleicacid, stearic acid, dodecanoic acid, 2-(2-(2-methoxyethoxy)ethoxy)aceticacid (MEEAA), beta-carboxyethylacrylate, 2-(2-methoxyethoxy)acetic acid,methoxyphenyl acetic acid, and mixtures thereof. Furthermore, aproprietary silane surface modifier, commercially available from OSISpecialties, Crompton South Charleston, W. Va., under the tradedesignation “Silquest A1230” is also suitable.

The surface modification of the particles in the colloidal dispersioncan be accomplished in a variety of ways. The process involves themixture of an inorganic dispersion with surface modifying agents.Optionally, a co-solvent can be added at this point, such as forexamples, 1-methoxy-2-propanol, ethanol, isopropanol, ethylene glycol,N,N-dimethylacetamide and 1-methyl-2-pyrrolidinone. The co-solvent canenhance the solubility of the surface modifying agents as well as thesurface modified particles. The mixture comprising the inorganic sol andsurface modifying agents is subsequently reacted at room or an elevatedtemperature, with or without mixing. In one method, the mixture can bereacted at about 85° C. for about 24 hours, resulting in the surfacemodified sol. In another method, where metal oxides are surface modifiedthe surface treatment of the metal oxide can preferably involve theadsorption of acidic molecules to the particle surface. The surfacemodification of the heavy metal oxide preferably takes place at roomtemperature.

The surface modification of ZrO₂ with silanes can be accomplished underacidic conditions or basic conditions. In one case the silanes areheated under acid conditions for a suitable period of time. At whichtime the dispersion is combined with aqueous ammonia (or other base).This method allows removal of the acid counter ion from the ZrO₂ surfaceas well as reaction with the silane. In another method the particles areprecipitated from the dispersion and separated from the liquid phase.

A combination of surface modifying agents can be useful, wherein atleast one of the agents has a functional group co-polymerizable with ahardenable resin. For example, the polymerizing group can beethylenically unsaturated or a cyclic function subject to ring openingpolymerization. An ethylenically unsaturated polymerizing group can be,for example, an acrylate or methacrylate, or vinyl group. A cyclicfunctional group subject to ring opening polymerization generallycontains a heteroatom such as oxygen, sulfur or nitrogen, and preferablya 3-membered ring containing oxygen such as an epoxide.

Useful caged molecules for the nanodispersed phase include polyhedraloligomeric silsesquioxane molecules, which are cage-like hybridmolecules of silicone and oxygen. Polyhedral oligomeric silsesquioxane(POSS) molecules are derived from a continually evolving class ofcompounds closely related to silicones through both composition and ashared system of nomenclature. POSS molecules have two unique features(1) the chemical composition is a hybrid, intermediate (RSiO_(1.5))between that of silica (SiO₂) and silicone (R₂SiO), and (2) themolecules are physically large with respect to polymer dimensions andnearly equivalent in size to most polymer segments and coils.Consequently, POSS molecules can be thought of as the smallest particles(about 1-1.5 nm) of silica possible. However unlike silica or modifiedclays, each POSS molecule contains covalently bonded reactivefunctionalities suitable for polymerization or grafting POSS monomers topolymer chains. In addition, POSS acrylate and methacrylate monomers aresuitable for ultraviolet (UV) curing. High functionality POSS acrylatesand methacrylates (for example, MA0735 and MA0736) are miscible withmost of the UV-curable acrylic and urethane acrylic monomers oroligomers to form mechanically durable hardcoat in which POSS moleculesform nano-phases uniformly dispersed in the organic coating matrix.

Carbon can also be used in the nanodispersed phase in the form ofgraphite, carbon nanotubes, bulky balls, or carbon black such asdescribed in U.S. Pat. No. 7,368,161 (McGurran et al.). Additionalmaterials that can be used in the nanodispersed phase include Irgastat™P18 (available from Ciba Corporation, Tarrytown, N.Y.) and AmpacetLR-92967 (available from Ampacet Corporation, Tarrytown, N.Y.).

The dispersed phase is typically present in the matrix at concentrationsbetween about 1 volume % and about 75 volume %; preferably between about5 volume % and about 20 volume %. The nanostructured articles of theinvention may have a nanostructure that is anisotropic. Thenanostructured anisotropic surface typically comprises nanofeatureshaving a height to width ratio of about 2:1 or greater; preferably about5:1 or greater. In some embodiments, the height to width ratio is even50:1 or greater, 100:1 or greater, or 200:1 or greater. Thenanostructured anisotropic surface can comprise nanofeatures such as,for example, nano-pillars or nano-columns, or continuous nano-wallscomprising nano-pillars or nano-columns. Preferably, the nanofeatureshave steep side walls that are roughly perpendicular to the substrate.In some embodiments, the majority of the nanofeatures are capped withdispersed phase material. The concentration of the dispersed phase atthe surface (versus in the interior of the matrix) can be between about1 volume % and about 75 volume %; preferably between about 5 volume %and about 20 volume %. In some embodiments, the concentration of thedispersed phase is higher at the surface of the matrix than within thematrix. The nanostructured surface typically comprises nanofeatures thathave a height of from 50 to 750 nanometers, in some cases from 75 to 300nanometers, and in some cases 100 to 200 nanometers. Once metallized(e.g., by sputtering), the nanostructured surface can be penetrated withmetal by an extent approximately equal to the height of thenanofeatures. The nanostructured surface typically comprisesnanofeatures that have width (e.g., at about half their height) of from15 to 200 nanometers, in some cases from 50 to 125 nanometers. Thenanostructure surface typically comprises nanofeatures that have lateralspacing (i.e., spacing at about half the height of the nanofeatures, inthe plane of the nanostructured major surface) of from 5 to 500nanometers, in some cases from 15 to 100 nanometers. The lateral spacingat about half the height of the nanofeatures, in the plane of thenanostructured major surface, can be determined microscopically bysectioning the nanostructured surface normal to the major surface andmeasuring the distance (e.g., by transmission electron microscopy). Thenanostructured surface typically comprises nanofeatures that have aheight to width ratio of 2 to 1, in some cases from 100 to 1, orgreater. The nanostructure surface typically exhibits a reflectance offrom 0.05 to 1, in some cases from 0.05 to 0.35. The nanostructuresurface typically exhibits a transmitted haze (as measured using aHaze-Gard Plus (BYK-Gardner, Columbia, Md.) of from 0.1 to 1, in somecases from 0.1 to 0.4.

In some embodiments the matrix may comprise materials for staticdissipation in order to minimize attraction of dirt and particulate andthus maintain surface quality. Suitable materials for static dissipationinclude, for example, Stat-Rite™ polymers such X-5091, M-809, S-5530,S-400, S-403, and S-680 (available from Lubrizol, Wickliffe, Ohio);3,4-polyethylenedioxythiophene-polystyrenesulfonate (PEDOT/PSS)(available from H.C. Starck, Cincinnati, Ohio); polyanaline;polythiophene; and Pelestat™ NC6321 and NC7530 antistatic additives(available from Tomen America Inc., New York, N.Y.).

The nanostructured surface is formed by anisotropically etching thematrix. The matrix comprising the nanoscale dispersed phase can beprovided, for example, as a coating on a substrate. The substrate canbe, for example, a polymeric substrate, a glass substrate or window, ora function device such as an organic light emitting diode (OLED), adisplay, a photovoltaic device, or the like. The matrix comprising thedispersed phase can be coated on the substrate and cured using methodsknown in the art such as, for example, casting cure by casting drum, diecoating, flow coating, or dip coating. The coating can be prepared inany desired thickness greater than about 1 micron or preferably greaterthan about 4 microns. In addition the coating can be cured by UV,electron beam, or heat. Alternatively, the matrix comprising thedispersed phase may be the article itself.

In some embodiments, the surface of the matrix comprising the nanoscaledispersed phase may be microstructured. For example, a substrate with av-groove microstructured surface can be coated with polymerizable matrixmaterials comprising a nanodispersed phase and treated by plasma etchingto form nanostructures on v-groove microstructured surface.Alternatively, a microstructured article such as Fresnel lens or amicrostructured article comprising microreplicated posts or columnscomprising nanodispersed phases can be also treated by plasma etching toform nanostructures on microstructures.

The matrix is anisotropically etched using chemically reactive plasma.The RIE process, for example, involves generating plasma under vacuum byan electromagnetic field. High energy ions from the plasma attack oretch away the matrix material.

A typical RIE system consists of a vacuum chamber with two parallelelectrodes, the “powered electrode” (or “sample carrier electrode”) andthe counter-electrode, which create an electric field that acceleratesions toward. The powered electrode is situated in the bottom portion ofthe chamber and is electrically isolated from the rest of the chamber.The article or sample to be nanostructured is placed on the poweredelectrode. Reactive gas species can be added to the chamber, forexample, through small inlets in the top of the chamber and can exit tothe vacuum pump system at the bottom of the chamber. Plasma is formed inthe system by applying a RF electromagnetic field to the poweredelectrode. The field is typically produced using a 13.56 MHz oscillator,although other RF sources and frequency ranges may be used. The gasmolecules are broken and can become ionized in the plasma andaccelerated toward the powered electrode to etch the sample. The largevoltage difference causes the ions to be directed toward the poweredelectrode where they collide with the sample to be etched. Due to themostly vertical delivery of the ions, the etch profile of the sample issubstantially anisotropic. Preferably, the powered electrode is smallerthan the counter-electrode creating a large voltage potential across theion sheath adjacent the powered electrode. Preferably, the etching is toa depth greater than about 50 nanometers, more preferably greater thanabout 75 nanometers, and more preferably yet greater than about 100nanometers.

The process pressure is typically maintained at below about 20 mTorr(preferably, below about 10 mTorr) but greater than about 1 mTorr. Thispressure range is very conducive for generation of the anisotropicnanostructure in a cost effective manner. When the pressure is aboveabout 20 mTorr, the etching process becomes more isotropic because ofthe collisional quenching of the ion energy. Similarly, when thepressure goes below about 1 mTorr, the etching rate becomes very lowbecause of the decrease in number density of the reactive species. Also,the gas pumping requirements become very high.

The power density of the RF power of the etching process is preferablyin the range of about 0.1 to about 1.0 watts/cm³ (preferably, about 0.2to about 0.3 watts/cm³).

The type and amount of gas utilized will depend upon the matrix materialto be etched. The reactive gas species need to selectively etch thematrix material rather than the dispersed phase. Additional gases may beused for enhancing the etching rate of hydrocarbons or for the etchingof non-hydrocarbon materials. For example, fluorine containing gasessuch as perfluoromethane, perfluoroethane, perfluoropropane,sulfurhexafluoride, nitrogen trifluoride, and the like can be added tooxygen or introduced by themselves to etch materials such as SiO₂,tungsten carbide, silicon nitride, amorphous silicon, and the like.Chlorine-containing gases can likewise be added for the etching ofmaterials such as aluminum, sulfur, boron carbide, and the like.Hydrocarbon gases such as methane can be used for the etching ofmaterials such as gallium arsenide, gallium, indium, and the like. Inertgases, particularly heavy gases such as argon can be added to enhancethe anisotropic etching process.

Advantageously, the method of the invention can also be carried outusing a continuous roll-to-roll process. For example, the method of theinvention can be carried out using “cylindrical” RIE. Cylindrical RIEutilizes a rotating cylindrical electrode to provide anisotropicallyetched nanostructures on the surface of the articles of the invention.

In general, cylindrical RIE for making the nanostructured articles ofthe invention can be described as follows. A rotatable cylindricalelectrode (“drum electrode”) powered by radio-frequency (RF) and agrounded counter-electrode are provided inside a vacuum vessel. Thecounter-electrode can comprise the vacuum vessel itself. Gas comprisingan etchant is fed into the vacuum vessel, and plasma is ignited andsustained between the drum electrode and the grounded counter-electrode.The conditions are selected so that sufficient ion bombardment isdirected perpendicular to the circumference of the drum. A continuousarticle comprising the matrix containing the nanodispersed phase canthen be wrapped around the circumference of the drum and the matrix canbe etched in the direction normal to the plane of the article. Thematrix can be in the form of a coating on an article such as, forexample, on a film or web, or the matrix can be the article itself. Theexposure time of the article can be controlled to obtain a predeterminedetch depth of the resulting nanostructure. The process can be carriedout at an operating pressure of approximately 10 mTorr.

In some exemplary embodiments that include a composite surface that isnanostructured and that is formed with a matrix phase and a dispersedphase, the portion of the dispersed that is exposed through the reactiveion etching of the matrix, and that in part leads to the formation ofthe nanostructured surface through its action as an etch mask, can beremoved. That is, the portion of the dispersed phase that terminate theupper extents of the nanofeatures of FIG. 15 can be removed, for examplein a separate etching step (dry plasma etching with a different gascomposition from that selected to etch the matrix, or wet etching, forexample), after the formerly described reactive ion etching step thatremoves matrix material anisotropically.

Although the modified substrates disclosed thus far includes ananostructured and antireflective surface formed by reactive ion etchinga composite material comprising a matrix having a dispersed phasetherein, it is within the scope of the present disclosure to use asubstrate that has no such composite material, but, for example, ananostructured surface defined by reactive ion etching a substrate thatis partially masked by a discontinuous surface deposit of, for example,a single phase material. Such substrates are disclosed in publicationssuch as Plasma Processes and Polymers, Vol. 6, Issue Supplement 1, pp.S716-S-721 (2009) and Surface and Coatings Technology, Vol. 205, IssueSupplement 2, pp. S495-497 (2011).

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers and whereinthe conductor has an average thickness of greater than 50 nanometers.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers and whereinthe conductor has an average thickness in the range from 0.075 to 0.5micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers and whereinthe conductor has an average thickness in the range from 0.1 to 0.25micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers and whereinthe conductor has an average thickness of greater than 50 nanometers.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers and whereinthe conductor has an average thickness in the range from 0.075 to 0.5micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers and whereinthe conductor has an average thickness in the range from 0.1 to 0.25micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers and whereinthe conductor has an average thickness of greater than 50 nanometers.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers and whereinthe conductor has an average thickness in the range from 0.075 to 0.5micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers and whereinthe conductor has an average thickness in the range from 0.1 to 0.25micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers, wherein theconductor has an average thickness of greater than 50 nanometers, andwherein the nanostructured surface comprises a matrix and a nanoscaledispersed phase that comprises nanoparticles having a particle size from10 to 200 nanometers and wherein the nanoparticles are present in thematrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers, wherein theconductor has an average thickness in the range from 0.075 to 0.5micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 10 to 200 nanometers and wherein the nanoparticlesare present in the matrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers, wherein theconductor has an average thickness in the range from 0.1 to 0.25micrometer., and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 10 to 200 nanometers and wherein the nanoparticlesare present in the matrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness of greater than 50 nanometers, andwherein the nanostructured surface comprises a matrix and a nanoscaledispersed phase that comprises nanoparticles having a particle size from10 to 200 nanometers and wherein the nanoparticles are present in thematrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness in the range from 0.075 to 0.5micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 10 to 200 nanometers and wherein the nanoparticlesare present in the matrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness in the range from 0.1 to 0.25micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 10 to 200 nanometers and wherein the nanoparticlesare present in the matrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness of greater than 50 nanometers, andwherein the nanostructured surface comprises a matrix and a nanoscaledispersed phase that comprises nanoparticles having a particle size from10 to 200 nanometers and wherein the nanoparticles are present in thematrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness in the range from 0.075 to 0.5micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 10 to 200 nanometers and wherein the nanoparticlesare present in the matrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness in the range from 0.1 to 0.25micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 10 to 200 nanometers and wherein the nanoparticlesare present in the matrix from 1% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers, wherein theconductor has an average thickness of greater than 50 nanometers, andwherein the nanostructured surface comprises a matrix and a nanoscaledispersed phase that comprises nanoparticles having a particle size from20 to 100 nanometers and wherein the nanoparticles are present in thematrix from 5% to 20% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers, wherein theconductor has an average thickness in the range from 0.075 to 0.5micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 20 to 100 nanometers and wherein the nanoparticlesare present in the matrix from 5% to 20% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 50 to 750 nanometers, a width from 15 to 200nanometers, and a lateral spacing from 5 to 500 nanometers, wherein theconductor has an average thickness in the range from 0.1 to 0.25micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 20 to 100 nanometers and wherein the nanoparticlesare present in the matrix from 5% to 20% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness of greater than 50 nanometers, andwherein the nanostructured surface comprises a matrix and a nanoscaledispersed phase that comprises nanoparticles having a particle size from20 to 100 nanometers and wherein the nanoparticles are present in thematrix from 5% to 20% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness in the range from 0.075 to 0.5micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 20 to 100 nanometers and wherein the nanoparticlesare present in the matrix from 5% to 20% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 75 to 300 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness in the range from 0.1 to 0.25micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 20 to 100 nanometers and wherein the nanoparticlesare present in the matrix from 5% to 20% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness of greater than 50 nanometers, andwherein the nanostructured surface comprises a matrix and a nanoscaledispersed phase that comprises nanoparticles having a particle size from20 to 100 nanometers and wherein the nanoparticles are present in thematrix from 5% to 20% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness in the range from 0.075 to 0.5micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 20 to 100 nanometers and wherein the nanoparticlesare present in the matrix from 5% to 20% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface prepared by reactive ionetching and a metallic conductor disposed on the first nanostructuredsurface, wherein the first nanostructured surface comprises nanofeatureshaving a height from 100 to 200 nanometers, a width from 50 to 125nanometers, and a lateral spacing from 15 to 100 nanometers, wherein theconductor has an average thickness in the range from 0.1 to 0.25micrometer, and wherein the nanostructured surface comprises a matrixand a nanoscale dispersed phase that comprises nanoparticles having aparticle size from 20 to 100 nanometers and wherein the nanoparticlesare present in the matrix from 5% to 20% by volume.

For any of the immediately aforementioned exemplary embodiments, themetallic conductor may be present in the form of a mesh micropatterncomprising traces with width in the range of 0.1 to 20 micrometers, insome embodiments in the range of 0.5 to 10 micrometers, in someembodiments in the range of 0.5 to 5 micrometers, in some embodiments inthe range of 0.5 to 4 micrometers, in some embodiments in the range of0.5 to 3 micrometers, in some embodiments in the range of 0.5 to 2micrometers, in some embodiments from 1 to 3 micrometers, in someembodiments in the range of 0.1 to 0.5 micrometers. In some embodiments,the open area of a region of the mesh conductor micropattern (e.g., avisible light transparent conductive region) is between 80% and 99.5%,in other embodiments between 90% and 99.5%, in other embodiments between95% and 99%, in other embodiments between 96% and 99.5%, in otherembodiments between 97% and 98%, and in other embodiments up to 99.95%.

In one exemplary embodiment, an article comprises a transparentsubstrate having a first nanostructured surface and a conductor in theform of a micropattern disposed on the first nanostructured surface;wherein the first nanostructured surface comprises nanofeatures having aheight from 75 to 250 nanometers, a width from 15 to 150 nanometers, anda lateral spacing from 10 to 150 nanometers; wherein the metallicconductor has an average thickness of greater than 50 nanometers;wherein the micropattern is formed by a plurality of traces defining aplurality of open area cells; wherein the micropattern has an open areafraction greater than 80%; wherein each of the traces has a width from0.5 to 3 micrometers; wherein the nanostructured surface comprises amatrix and a nanoscale dispersed phase; wherein the nanoscale dispersedphase comprises nanoparticles having particle size from 10 to 250nanometers; and wherein the nanoparticles are present in the matrix at avolume percent from 20 to 75%.

For any of the immediately aforementioned exemplary embodiments, themetallic conductor may further be connected to a touch sensor drivedevice, as discussed later.

Substrates Having Structured Particle Coating

As described above, reactive ion etching is one method of making asubstrate having a nanostructured surface. A second method is describedherein to produce a second type of nanostructured substrate that isuseful in the present disclosure, i.e., a substrate having structuredparticle coating. Such methods and apparatus for making this type of asubstrate are fully described in assignee's copending U.S. ProvisionalPatent Application No. 61/593,666, filed Feb. 2, 2011 and entitled“Nanostructured Materials and Methods of Making the Same”, and isincorporated by reference in its entirety.

The second process is directed to polymerization of curable resin andsubmicrometer particle mixtures in a controlled inhibitor gasenvironment. Submicrometer, sub micrometer, and submicron are usedinterchangeably herein. The material can be polymerized using actinicradiation. A solution including radically curable prepolymers,submicrometer particles and solvent (optional) can be particularly wellsuited to the production of a surface structured article. The solventcan be a mixture of solvents. During the polymerization (first cure) asurface layer is inhibited by the presence of an inhibitor gas (e.g.,oxygen and air) while the bulk of the coating is cured. A surfacestructure comprising protruding submicrometer particles (i.e.,nanofeatures) results. The surface region is subsequently polymerized(second cure) yielding a cured structured coating. The subsequentpolymerization of the surface layer can occur in the same curing chamberor in at least one additional curing chamber. The time between the firstcure and the subsequent cure may be, for example, less 60 seconds (oreven less than 45, 30 25, 20, 15, 10, or ever less 5 seconds); in someembodiments almost instantaneous.

FIG. 16 is a schematic of exemplary process 100 for formingnanostructured article 180 and 190 according to one aspect of thedisclosure. First solution 110 includes polymerizable material 130 andsub micrometer particles 140 in an optional solvent 120. As used herein,the term solution is sometimes applied to liquids that include particlessuspended therein, and thus may also be described as suspensions ordispersions. A major portion of the solvent 120 is removed from firstsolution 110 to form second solution 150 containing substantiallypolymerizable material 130 and sub micrometer particles 140. Solution150 is polymerized by actinic radiation curing in the presence of aninhibitor gas to a form nanostructured material 180. Nanostructuredmaterial 180 includes first and second integral regions. Second region175 includes substantially polymerized matrix material 170 and submicrometer particles 140. First nanostructured region 178 includespolymerizable material 135 and sub micrometer particles 140. Firstregion 178 has outer major surface 137 wherein at least the outer mostsub micrometer particles are partially conformally coated bypolymerizable material 135. By “partially conformally coated” it isunderstood and evident, for example, from FIG. 16 that whilepolymerizable material 135 conformally coats a portion of the outersurface of some sub micrometer particles, some portions of thesesubmicrometer particles have an excess amount of polymerizable material135 beyond that that conformally coats their outer surfaces. Material180 is further polymerized by actinic radiation to form thenanostructured material 190. Nanostructured material 190 includes firstand second integral regions. Second region 195 includes polymerizedmatrix material 160 and submicrometer particles 140. Firstnanostructured region 198 includes polymerized material 165 andsubmicrometer particles 140. First region 198 has outer major surface167 wherein at least outer most submicrometer particles are partiallyconformally coated by and optionally covalently bonded to polymermaterial 165. At least a portion of the submicrometer particles 140 inregion 198 form nanofeatures in the form of particle protrusions (i.e.,protrusive particles). Depending on the arrangement of particles, theheight of particle protrusions (i.e., the vertical distance from theoutermost extent of a protrusive particle to its adjacent recession) maybe equal approximately to half the diameter of the particle, the entirediameter of the particle, or greater than an entire diameter of theparticle. Once metallized (e.g., by sputtering), the surface of thenanostructured region (i.e., the nanostructured surface) can bepenetrated with metal by an extent approximately equal to the height ofthe nanofeatures. First and second regions, 198 and 195, respectively,have first and second average densities, respectively, and the firstaverage density is less than the second average density. Although notshown in FIG. 16, it is to be understood that first solution 110 can becoated on a substrate (not shown), to form a nanostructured coating onthe substrate. In some embodiments, the coating can form an array ofclose packed partially conformally coated submicrometer particles withup to 10% (in some embodiments, up to 20%, 30%, 40%, 50%, 60%, 70%, 80%,or even at least 90%) of the submicrometer particles protruding.

In some embodiments, the average submicrometer particle center to centerspacing is 1.1 (in some embodiments, at least 1:2, 1.3, 1:5, or even atleast 2) diameters apart.

In some embodiments, articles described herein (e.g., some embodimentshaving desirable antireflection properties) have surface gradientdensity thickness in a range from 50 nm to 200 nm (in some embodiments,75 nm to 150 nm). A substantially close packed (highly packed) array ofprotruding submicrometer particles cured into a polymer matrix canresult in a durable gradient index surface layer giving rise to antireflection. Polymerizable material (e.g., 130 in FIG. 16) (i.e.,contained in the continuous phase) described herein comprises freeradical curable prepolymers. Exemplary free radical curable prepolymersinclude monomers, oligomers, polymers and resins that will polymerize(cure) via radical polymerization. Suitable free radical curableprepolymers include (meth)acrylates, polyester (meth)acrylates, urethane(meth)acrylates, epoxy (meth)acrylates and polyether (meth)acrylates,silicone (meth)acrylates and fluorinated meth(acrylates). Exemplaryradically curable groups include (meth)acrylate groups, olefiniccarbon-carbon double bonds, allyloxy groups, alpha-methyl styrenegroups, styrene groups, (meth)acrylamide groups, vinyl ether groups,vinyl groups, allyl groups and combinations thereof. Typically thepolymerizable material comprises free radical polymerizable groups. Insome embodiments, polymerizable material (e.g., 130 in FIG. 16)comprises acrylate and methacrylate monomers, and in particular,multifunctional (meth)acrylate, difunctional (meth)acrylates,monofunctional (meth)acrylate, and combinations thereof.

As used herein, the term “monomer” means a relatively low molecularweight material (i.e., having a molecular weight less than about 500g/mole) having one or more radically polymerizable groups. “Oligomer”means a relatively intermediate molecular weight material having amolecular weight in a range from about 500 g/mole to about 10,000g/mole. “Polymer” means a relatively high molecular weight materialhaving a molecular weight of at least about 10,000 g/mole (in someembodiments, in a range from 10,000 g/mole to 100,000 g/mole). The term“molecular weight” as used throughout this specification means numberaverage molecular weight unless expressly noted otherwise.

In some exemplary embodiments, the polymerizable compositions include atleast one monomeric or oligomeric multifunctional (meth)acrylate.Typically, the multifunctional (meth)acrylate is a tri(meth)acrylateand/or a tetra(meth)acrylate. In some embodiments, higher functionalitymonomeric and/or oligomeric (meth)acrylates may be employed. Mixtures ofmultifunctional (meth)acrylates may also be used.

Exemplary multifunctional (meth)acrylate monomers include polyolmulti(meth)acrylates. Such compounds are typically prepared fromaliphatic triols, and/or tetraols containing 3-10 carbon atoms. Examplesof suitable multifunctional (meth)acrylates are trimethylolpropanetriacrylate, di(trimethylolpropane) tetraacrylate, pentaerythritoltetraacrylate, the corresponding methacrylates and the (meth)acrylatesof alkoxylated (usually ethoxylated) derivatives of said polyols.Examples of multi-functional monomers include those available under thetrade designations “SR-295,” “SR-444,” “SR-399,” “SR-355,” “SR494” and“SR-368” “SR-351″SR492”, “SR350”, SR415, “SR454,” “SR499, 501,” “SR502,”“SR9020 from Sartomer Co., Exton, Pa., and “PETA-K,” “PETIA.” and“TMPTA-N” from Surface Specialties, Smyrna, Ga. The multi-functional(meth)acrylate monomers may impart durability and hardness to thestructured surface. In some exemplary embodiments, the polymerizablecompositions include at least one monomeric or oligomeric difunctional(meth)acrylate. Exemplary difunctional (meth)acrylate monomers includediol difunctional(meth)acrylates. Such compounds are typically preparedfrom aliphatic diols containing 2-10 carbon atoms. Examples of suitabledifunctional (meth)acrylates are ethylene glycol diacrylate,1,6-hexanediol diacrylate, 1,12-dodecanediol dimethacrylate, cyclohexanedimethanol diacrylate, 1,4 butanediol diacrylate, diethylene glycoldiacrylate, diethylene glycol dimethacrylate, 1,6-hexanedioldimethacrylate, neopentyl glycol diacrylate, neopentyl glycoldimethacrylate, and dipropylene glycol diacrylate. Difunctional(meth)acrylates from difunctional polyethers are also useful. Examplesinclude polyethylenglycol di(meth)acrylates and polypropylene glycoldi(meth)acrylates.

In some exemplary embodiments, the polymerizable compositions include atleast one monomeric or oligomeric monofunctional (meth)acrylate.Exemplary monofunctional (meth)acrylates and other free radical curablemonomers include styrene, alpha-methylstyrene, substituted styrene,vinyl esters, vinyl ethers, N-vinyl-2-pyrrolidone, (meth)acrylamide,N-substituted (meth)acrylamide, octyl (meth)acrylate, iso-octyl(meth)acrylate, nonylphenol ethoxylate (meth)acrylate, isononyl(meth)acrylate, isobornyl (meth)acrylate, 2-(2-ethoxyethoxy)ethyl(meth)acrylate, 2-ethylhexyl (meth)acrylate, lauryl (meth)acrylate,butanediol mono(meth)acrylate, beta-carboxyethyl (meth)acrylate,isobutyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate,(meth)acrylonitrile, maleic anhydride, itaconic acid, isodecyl(meth)acrylate, dodecyl (meth)acrylate, n-butyl (meth)acrylate, methyl(meth)acrylate, hexyl (meth)acrylate, (meth)acrylic acid,N-vinylcaprolactam, stearyl (meth)acrylate, hydroxy functionalpolycaprolactone ester (meth)acrylate, hydroxyethyl (meth)acrylate,hydroxymethyl (meth)acrylate, hydroxypropyl (meth)acrylate,hydroxyisopropyl (meth)acrylate, hydroxybutyl (meth)acrylate,hydroxyisobutyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, andcombinations thereof. The monofunctional (meth)acrylates are useful for,for example, for adjusting the viscosity and functionality of theprepolymer composition.

Oligomeric materials are also useful in making the material comprisingsubmicrometer particles described herein. The oligomeric materialcontributes bulk optical and durable properties to the curedcomposition. Representative difunctional oligomers include Ethoxylated(30) bisphenol A diacrylate, polyethylene glycol (600) dimethacrylate,ethoxylated (2) bisphenol A dimethacrylate, ethoxylated (3) bisphenol Adiacrylate, ethoxylated (4) bisphenol A dimethacrylate, ethoxylated (6)bisphenol A dimethacrylate, polyethylene glycol (600) diacrylate.Typical useful difunctional oligomers and oligomeric blendsinclude-those available under the trade designations “CN-120”, “CN-104”,“CN-116”, “CN-117,” from Sartomer Co. and “EBECRYL 1608”, “EBECRYL3201”, “EBECRYL 3700”, “EBECRYL 3701”, “EBECRYL 608” from Cytec SurfaceSpecialties, Smyrna, Ga. Other useful oligomers and oligomeric blendsinclude-those available under the trade designations “CN-2304”,“CN-115”, “CN-118”, “CN-119”, “CN-970A60”, “CN-972”, “CN-973A80”, and“CN-975” from Sartomer Co and “EBECRYL 3200,” “EBECRYL 3701,” “EBECRYL3302,”

“EBECRYL 3605,” “EBECRYL 608,” from Cytec Surface Specialties.

The polymeric matrix can be made from functionalized polymeric materialssuch as weatherable polymeric materials, hydrophobic polymericmaterials, hydrophilic polymeric materials, antistatic polymericmaterials, antistaining polymeric materials, conductive polymericmaterials for electromagnetic shielding, antimicrobial polymericmaterials, or antiwearing polymeric materials. Functional hydrophilic orantistatic polymeric matrix comprises the hydrophilic acrylates such ashydroxyethyl methacrylate (HEMA), hydroxyethyl acrylate (HEA),poly(ethylene glycol) acrylates with different polyethyle glycol (PEG)molecular weights, and other hydrophilic acrylates (e.g., 3-hydroxypropyl acrylate, 3-hydroxy propyl methacrylate, 2-hydroxy-3-methacryloxypropyl acrylate, and 2-hydroxy-3-acryloxy propyl acrylate).

In some embodiments, solvent (see, e.g., 120 in FIG. 16) can be removedfrom the solution 110 by drying, for example, at temperatures notexceeding the decomposition temperature of either the radiation curableprepolymer (see, e.g., 130 in FIG. 16), or the substrate (if included).In one exemplary embodiment, the temperature during drying is kept belowa temperature at which the substrate is prone to deformation (e.g., awarping temperature or a glass-transition temperature of the substrate).Exemplary solvents include linear, branched, and cyclic hydrocarbons,alcohols, ketones, and ethers, including propylene glycol ethers (e.g.,1-methoxy-2-propanol), isopropyl alcohol, ethanol, toluene, ethylacetate, 2-butanone, butyl acetate, methyl isobutyl ketone, methyl ethylketone, cyclohexanone, acetone, aromatic hydrocarbons, isophorone,butyrolactone, N-methylpyrrolidone, tetrahydrofuran, esters (e.g.,lactates, acetates, propylene glycol monomethyl ether acetate (PMacetate), diethylene glycol ethyl ether acetate (DE acetate), ethyleneglycol butyl ether acetate (EB acetate), dipropylene glycol monomethylacetate (DPM acetate), iso-alkyl esters, isohexyl acetate, isoheptylacetate, isooctyl acetate, isononyl acetate, isodecyl acetate,isododecyl acetate, isotridecyl acetate, and other iso-alkyl esters),water; and combinations thereof.

The first solution (see. e.g., 110 in FIG. 16) may also include a chaintransfer agent. The chain transfer agent is preferably soluble in themonomer mixture prior to polymerization. Examples of suitable chaintransfer agents include triethyl silane and mercaptans.

An initiator, such as a photoinitiator, can be used in an amounteffective to facilitate polymerization of the prepolymers present in thesecond solution (see, e.g., 150 in FIG. 16). The amount ofphotoinitiator can vary depending upon, for example, the type ofinitiator, the molecular weight of the initiator, the intendedapplication of the resulting nanostructured material (see, e.g., 180 and190 in FIG. 1) and the polymerization process including, the temperatureof the process and the wavelength of the actinic radiation used. Usefulphotoinitiators include, for example, those available from CibaSpecialty Chemicals under the trade designations “IRGACURE” and“DAROCURE”, including “IRGACUR 184” and “IRGACUR 819,” respectively.

Submicrometer particles include nanoparticles (e.g., nanospheres, andnanotubes). The sub micrometer particles can be associated orunassociated or both. The submicrometer particles can have spherical, orvarious other shapes. For example, submicrometer particles can beelongated and have a range of aspect ratios. In some embodiments, thesubmicrometer particles can be inorganic submicrometer particles,organic (e.g., polymeric) submicrometer particles, or a combination oforganic and inorganic submicrometer particles. In one exemplaryembodiment, submicrometer particles can be porous particles, hollowparticles, solid particles, or a combination thereof.

In some embodiments, the submicrometer particles are in a range from 5nm to 1000 nm (in some embodiments, 20 nm to 750 nm, 50 nm to 500 nm, 75nm to 300 nm, or even 100 nm to 200 nm). Submicrometer particles have amean diameter in the range from about 10 nm to about 1000 nm. The term“submicrometer particle” can be further defined herein to mean colloidal(primary particles or associated particles) with a diameter less thanabout 1000 nm. The term “associated particles” as used herein refers toa grouping of two or more primary particles that are aggregated and/oragglomerated. The term “aggregated” as used herein is descriptive of astrong association between primary particles which may be chemicallybound to one another. The breakdown of aggregates into smaller particlesis difficult to achieve. The term “agglomerated” as used herein isdescriptive of a weak association of primary particles which may be heldtogether by charge or polarity and can be broken down into smallerentities. The term “primary particle size” is defined herein as the sizeof a non-associated single particle. The dimension or size of thesubmicrometer dispersed phase can be determined by electron microscopy(e.g., transmission electron microscopy (TEM)).

The submicrometer (including nanometer sized) particles can comprise,for example, carbon, metals, metal oxides (e.g., SiO₂, ZrO₂, TiO₂, ZnO,magnesium silicate, indium tin oxide, and antimony tin oxide), carbides(e.g., SiC and WC), nitrides, borides, halides, fluorocarbon solids(e.g., poly(tetrafluoroethylene)), carbonates (e.g., calcium carbonate),and mixtures thereof. In some embodiments, submicrometer particlescomprises at least one of SiO₂ particles, ZrO₂ particles, TiO₂particles, ZnO particles, Al₂O₃ particles, calcium carbonate particles,magnesium silicate particles, indium tin oxide particles, antimony tinoxide particles, poly(tetrafluoroethylene) particles, or carbonparticles. Metal oxide particles can be fully condensed. Metal oxideparticles can be crystalline.

The weight ratio of sub micrometer particles or the modified submicrometer particles (dispersed phase) to radically curable prepolymer(matrix) is one measure of the particle loading. In some embodiments,particles are present in the matrix in an amount in a range from about10:90 to 80:20 (in some embodiments, for example, 20:80 to 70:30). Interms of volume percent, in some embodiments, sub micrometer particlesare present in the matrix in an amount in the range from about 40 volumepercent to 85 volume percent (i.e., 40:60 to 85:15 by volume forparticles:matrix). More preferably the particles are present in thematrix in an amount in the range from 45 volume percent to 75 volumepercent, even more preferably in a range from 50 volume percent to 70volume percent. The nanostructured surface typically comprisesnanofeatures that have a height of from 50 to 750 nanometers, in somecases from 75 to 300 nanometers, and in some cases 100 to 200nanometers. Once metallized (e.g., by sputtering), the nanostructuredsurface can be penetrated with metal by an extent approximately equal tothe height of the nanofeatures. The nanostructured surface typicallycomprises nanofeatures that have width (e.g., at about half theirheight) of from 15 to 200 nanometers, in some cases from 50 to 125nanometers. The nanostructure surface typically comprises nanofeaturesthat have lateral spacing (i.e., spacing at about half the height of thenanofeatures, in the plane of the nanostructured major surface) of from5 to 500 nanometers, in some cases from 15 to 100 nanometers.

The submicrometer particles can be surface treated using the sameprocess and surface treating agents as described in the Reaction IonEtching (RIE) process described above. Surface leveling agents disclosedin the RIE process can also be used for this second process of making asubstrate having structured particle coating.

The process for creating the nanostructured coatings generally includes(1) providing a coating solution comprising surface modified sub-micronparticles, radically curable prepolymers and solvent (optional); (2)supplying the solution to a coating device; (3) applying the coatingsolution to a substrate by one of many coating techniques; (4)substantially removing the solvent (optional) from coating; (5)polymerizing the material in the presence of a controlled amount ofinhibitor gas (e.g., oxygen) to provide a structured surface; and (6)optionally post-processing the dried polymerized coating, for example,by additional thermal, visible, ultraviolet (UV), or e-beam curing. Asalready described above, the product of these steps yields a compositecoating material wherein at least the outer most submicrometer particlesare partially conformally coated by polymerizable material. It is withinthe scope of the present disclosure for the polymerizable material thatat least partially conformally coats the outer most submicrometerparticles to be subsequently removed, before being metallized, forexample by sputtering. Removal of the polymerizable material that atleast partially conformally coats the outer most submicrometer particlesmay include reactive ion etching, as described here.

FIG. 17A shows a schematic view of exemplary process 300 for makingnanostructured coatings 366 and 376 on substrate 302. Process 300 shownin FIG. 17A is a continuous process, although it is to be understoodthat the process can instead be performed in a stepwise manner (i.e.,the steps of coating, removing solvent (optional), and polymerizingdescribed below can be performed on individual substrate pieces indiscrete operations to form a nanostructured coating (material).

Process 300 shown in FIG. 17A passes substrate 302 through coatingsection 310. Process 300 has optional first solvent removal section 320and optional second solvent removal section 350 to form coating 356 onsubstrate 302. Coating 356 on substrate 302 then passes throughpolymerization section 360 to form nanostructured coating 366 onsubstrate 302, and optional second polymerization section 370 to formnanostructured coating 376 on substrate 302 which is then wound up asoutput roll 380. Optional polymerization section 370 can be providedwith temperature controlled backup roll 372. In some embodiments,process 300 includes additional processing equipment common to theproduction of web-based materials, including idler rolls; tensioningrolls; steering mechanisms; surface treaters (e.g., corona or flametreaters); and lamination rolls. In some embodiments, process 300utilizes different web paths, coating techniques, polymerizationapparatus, positioning of polymerization apparatus, and drying ovens,where some of the sections described are optional.

Substrate 302 is unwound from input roll 301, passes over idler rolls303 and contacts coating roll 304 in coating section 310. First solution305 passes through coating die 307 to form first coating 306 of firstsolution 305 on substrate 302. First solution 305 can include solvents,polymerizable materials, submicrometer particles, photoinitiators, andany of the other first solution components described herein. Shroud 308positioned between coating die 307 in coating section 310, and firstsolvent removal section 320 protects coating 306 from ambient conditionsin the room and reduces any undesirable effects on the coating. Shroud308 can be, for example, a formed aluminum sheet that is positioned inclose proximity to first coating 306 and provides a seal around coatingdie 307 and coating roll 304. In some embodiments, shroud 308 can beoptional.

First optional solvent removal section, can be a gap dryer apparatusdescribed, for example, in U.S. Pat. No. 5,694,701 (Huelsman et al.) andU.S. Pat. No. 7,032,324 (Kolb et al.). A gap dryer can provide greatercontrol of the drying environment, which may be desired in someapplications. Optional second solvent removal section 350 can further beused to ensure that a major portion (i.e., greater than 90% (in someembodiments, greater than 80%, 70%, 60%, or even greater than 50%) byweight) of the solvent is removed. Solvent can be removed, for example,by drying in a thermal oven that can include, for example, airfloatation/convection, vacuum drying, gap drying, or a combination ofdrying techniques. The choice of drying technique may depend, forexample, on the desired process speed, extent of solvent removal, andexpected coating morphology.

FIG. 17B is a schematic view of polymerization section 360 (and 370) ofprocess 300 shown in FIG. 17A. FIG. 17B shows a cross-section of apolymerization section 360 (and 370) as viewed along an edge ofsubstrate 302. Polymerization section 360 includes housing 321 andquartz plate 322 that provide boundaries between radiation source 325and cure chamber environment 327. Cure chamber environment 327 partiallysurrounds first coating 356 and (at least partially) polymerized coating366 on substrate 302. At least partially polymerized coating 366includes nanostructures described herein.

Controlled cure chamber environment 327 will now be described. Housing321 includes entrance aperture 328 and exit aperture 329 that can beadjusted to provide any desired gap between substrate 302, coating 356on substrate 302, and the respective aperture. Controlled cure chamberenvironment 327 and first and second coatings 356 and 366 temperaturescan be controlled by the temperature of platen 326 (or temperaturecontrolled roll for cure chamber 370) (which can be fabricated frommetal that is cooled by, for example, either air or water to control thetemperature by removing the generated heat) and appropriate control ofthe temperature, composition, pressure and flow rate of first input gas331, second input gas 333, first output gas 335 and second output gas334. Appropriate adjustment of the sizes of entrance and exit apertures328, 329, respectively, can aid control of the pressure and flow rate offirst and second output gases 335, 334 respectively. The inhibitor gascontent is monitored through port 323 in chamber housing 321.

First input gas manifold 330 is positioned within housing 321 proximateentrance aperture 328, to distribute first input gas 331 uniformlyacross the width of first coating 356. Second input gas manifold 332 ispositioned within housing 321 proximate exit aperture 329, to distributesecond input gas 333 uniformly across the width of second coating 366.First and second input gases 331, 333, respectively, can be the same orthey can be different, and can include inert gasses 341 and 342 (e.g.,nitrogen and carbon dioxide) combined with inhibition gasses 344 and 345(e.g., oxygen and air), which can be combined to control theconcentration of inhibition gas in input gas 331 and 333. The relativecompositions, flow rates, flow velocities, flow impingement ororientation on the coating, and temperature of each of first and secondinput gases 331, 333, respectively, can be controlled independently, andcan be adjusted to achieve the desired environment in the radiation curechamber. In some embodiments, only one of first and second input gases331, 333, respectively, may be flowing. Other configurations of inputgas manifolds are also possible.

Nanostructured coating 366 on substrate 302 exits polymerization section360 and then passes through optional second polymerization section 370to form an optionally second nanostructured coating 376 on substrate302. Optional second polymerization section can increase the extent ofcure of nanostructured coating 366. In some embodiments, increasing theextent of cure can include polymerizing remaining polymerizable material(i.e., remaining polymerizable material (see, e.g., 135 in FIG. 16)).Nanostructured coating 376 on substrate 302 exits optional secondpolymerization section 370 and is then wound up as an output roll 380.In some embodiments, output roll 380 can have other desired films (notshown) laminated to the nanostructured coating and simultaneously woundon the output roll 380. In other embodiments, additional layers (notshown) can be coated, cured, and dried on either nanostructured coating366 and 376 or substrate 302.

Radiation source 325 can be any of a variety of actinic radiationsources (e.g., UV LEDs, visible LEDs, lasers, electron beams, mercurylamps, xenon lamps, carbon arc lamps, tungsten filament lamps,flashlamps, sunlight, and low intensity ultraviolet light (blacklight)). In some embodiments, radiation source 325 is capable ofproducing UV radiation. A combination of radiation sources emitting atdifferent wavelengths can be used to control the rate and extent of thepolymerization reaction. The radiation sources can generate heat duringoperation, and heat extractor 326 can be fabricated from aluminum thatis cooled by either air or water to control the temperature by removingthe generated heat.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers and wherein the conductor has an average thickness of greaterthan 50 nanometers.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers and wherein the conductor has an average thickness in therange from 0.075 to 0.5 micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers and wherein the conductor has an average thickness in therange from 0.1 to 0.25 micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers and wherein the conductor has an average thickness of greaterthan 50 nanometers.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers and wherein the conductor has an average thickness in therange from 0.075 to 0.5 micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers and wherein the conductor has an average thickness in therange from 0.1 to 0.25 micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers and wherein the conductor has an average thickness of greaterthan 50 nanometers.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers and wherein the conductor has an average thickness in therange from 0.075 to 0.5 micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers and wherein the conductor has an average thickness in therange from 0.1 to 0.25 micrometer.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers, wherein the conductor has an average thickness of greaterthan 50 nanometers, and wherein the nanostructured surface comprises amatrix and a nanoscale dispersed phase that comprises nanoparticleshaving a particle size from 50 to 250 nanometers and wherein thenanoparticles are present in the matrix from 40% to 85% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers, wherein the conductor has an average thickness in the rangefrom 0.075 to 0.5 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 50 to 250 nanometers andwherein the nanoparticles are present in the matrix from 40% to 85% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers, wherein the conductor has an average thickness in the rangefrom 0.1 to 0.25 micrometer., and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 50 to 250 nanometers andwherein the nanoparticles are present in the matrix from 40% to 85% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness of greaterthan 50 nanometers, and wherein the nanostructured surface comprises amatrix and a nanoscale dispersed phase that comprises nanoparticleshaving a particle size from 50 to 250 nanometers and wherein thenanoparticles are present in the matrix from 40% to 85% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness in the rangefrom 0.075 to 0.5 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 50 to 250 nanometers andwherein the nanoparticles are present in the matrix from 40% to 85% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness in the rangefrom 0.1 to 0.25 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 50 to 250 nanometers andwherein the nanoparticles are present in the matrix from 40% to 85% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness of greaterthan 50 nanometers, and wherein the nanostructured surface comprises amatrix and a nanoscale dispersed phase that comprises nanoparticleshaving a particle size from 50 to 250 nanometers and wherein thenanoparticles are present in the matrix from 40% to 85% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness in the rangefrom 0.075 to 0.5 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 50 to 250 nanometers andwherein the nanoparticles are present in the matrix from 40% to 85% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness in the rangefrom 0.1 to 0.25 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 50 to 250 nanometers andwherein the nanoparticles are present in the matrix from 40% to 85% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers, wherein the conductor has an average thickness of greaterthan 50 nanometers, and wherein the nanostructured surface comprises amatrix and a nanoscale dispersed phase that comprises nanoparticleshaving a particle size from 100 to 200 nanometers and wherein thenanoparticles are present in the matrix from 45% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers, wherein the conductor has an average thickness in the rangefrom 0.075 to 0.5 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 100 to 200 nanometers andwherein the nanoparticles are present in the matrix from 45% to 75% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers, wherein the conductor has an average thickness in the rangefrom 0.1 to 0.25 micrometer., and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 100 to 200 nanometers andwherein the nanoparticles are present in the matrix from 45% to 75% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness of greaterthan 50 nanometers, and wherein the nanostructured surface comprises amatrix and a nanoscale dispersed phase that comprises nanoparticleshaving a particle size from 100 to 200 nanometers and wherein thenanoparticles are present in the matrix from 45% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness in the rangefrom 0.075 to 0.5 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 100 to 200 nanometers andwherein the nanoparticles are present in the matrix from 45% to 75% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 75 to 300 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness in the rangefrom 0.1 to 0.25 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 100 to 200 nanometers andwherein the nanoparticles are present in the matrix from 45% to 75% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness of greaterthan 50 nanometers, and wherein the nanostructured surface comprises amatrix and a nanoscale dispersed phase that comprises nanoparticleshaving a particle size from 100 to 200 nanometers and wherein thenanoparticles are present in the matrix from 45% to 75% by volume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness in the rangefrom 0.075 to 0.5 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 100 to 200 nanometers andwherein the nanoparticles are present in the matrix from 45% to 75% byvolume.

In some exemplary embodiments, an article comprises a transparentsubstrate having a first nanostructured surface in the form of astructured particle coating and a metallic conductor disposed on thefirst nanostructured surface, wherein the first nanostructured surfacecomprises nanofeatures having a height from 100 to 200 nanometers, awidth from 50 to 125 nanometers, and a lateral spacing from 15 to 100nanometers, wherein the conductor has an average thickness in the rangefrom 0.1 to 0.25 micrometer, and wherein the nanostructured surfacecomprises a matrix and a nanoscale dispersed phase that comprisesnanoparticles having a particle size from 100 to 200 nanometers andwherein the nanoparticles are present in the matrix from 45% to 75% byvolume.

For any of the immediately aforementioned exemplary embodiments, themetallic conductor may be present in the form of a mesh micropatterncomprising traces with width in the range of 0.1 to 20 micrometers, insome embodiments in the range of 0.5 to 10 micrometers, in someembodiments in the range of 0.5 to 5 micrometers, in some embodiments inthe range of 0.5 to 4 micrometers, in some embodiments in the range of0.5 to 3 micrometers, in some embodiments in the range of 0.5 to 2micrometers, in some embodiments from 1 to 3 micrometers, in someembodiments in the range of 0.1 to 0.5 micrometers. In some embodiments,the open area of a region of the mesh conductor micropattern (e.g., avisible light transparent conductive region) is between 80% and 99.5%,in other embodiments between 90% and 99.5%, in other embodiments between95% and 99%, in other embodiments between 96% and 99.5%, in otherembodiments between 97% and 98%, and in other embodiments up to 99.95%.

For any of the immediately aforementioned exemplary embodiments, themetallic conductor may further be connected to a touch sensor drivedevice, as discussed later.

Method of Making the Conductor Micropatterns

Conductor micropatterns having the disclosed designs can be preparedusing any suitable method. Examples of methods for preparing conductormicropatterns include subtractive or additive methods. Exemplarysubtractive methods include placement of a patterned mask on a metalliccoating disposed on a substrate (e.g., a visible light transparentsubstrate), followed by selective etching (with metal being removed fromregions of the metallic coating that are not covered by the mask, andwith metal remaining in regions of the metallic coating that are coveredby the mask). Suitable masks include photoresist (patterned byphotolithography, as is known in the art), printed polymers (patternedby, for example, gravure, flexographic, or inkjet printing), or printedself-assembled monolayers (for example, printed using microcontactprinting with an elastomeric relief stamp). Other exemplary subtractivemethods include initial placement of a patterned lift-off mask on asubstrate (e.g., a visible light transparent substrate), blanket coatingof masked and unmasked regions with a metallic conductor (e.g., thinfilm metal), and washing of the lift-off mask and any metal disposedthereon. Exemplary additive processes include printing of electrolessdeposition catalyst on a substrate (e.g., visible light transparentsubstrate) in the form of the desired micropattern geometry, followed bypatterned electroless metal deposition (e.g., copper or nickel).

Preferred methods for generating the conductor micropatterns includemicrocontact printing. As compared with other means for reducing thereflectance of conductor patterns (coating with a carbon black-filledmaterial or partially reacting the metal to form an absorbing reactionproduct such as a sulfide), the means described herein were found to beparticularly well-suited for combination with a patterning approachbased on microcontact printing and etching, thus enabling specificmicropattern design parameters (e.g., trace width from 0.5 to 10micrometers, from 0.5 to 5 micrometers, from 0.5 to 4 micrometers, from0.5 to 3 micrometers, or from 1 to 3 micrometers) and conductorthickness (e.g., from 0.025 to 2 micrometer, from greater than 0.05 to 2micrometer, from greater than 0.05 to 1 micrometer, 0.075 to 0.5micrometer, or from 0.1 to 0.25 micrometer) to be fabricated. Theplacement of carbon black-filled materials on micron scale features isimpractical. The partial chemical conversion of sub-micron thick metals(e.g., 0.075 to 0.5 micrometer, or from 0.1 to 0.25 micrometer) to anabsorptive reaction product is not effective for substantially reducingthe reflectance without also substantially reducing the electricalconductance of the layer.

In the case of the substrate (e.g., visible light transparent)comprising nanostructured surface that is antireflective when exposed toair: a substrate is provided that includes a surface that isnanostructured and that is antireflective when exposed to air; ametallic conductor is deposited (e.g., by sputtering or by evaporation)onto the surface; a self-assembled monolayer (SAM) is printed in apattern using an elastomeric stamp; and finally the metal is etched fromdeposited metal regions not having the SAM and not etched from depositedmetal regions that include the SAM.

Method of Making a Making an Article Using Micropattern Conductors

A conductor micropattern disposed on a surface of a substrate is usefulfor making a number of different articles. Components that comprisetransparent conductive patterns include touch sensor panels for touchdisplays. Some touch sensor panels for touch displays, for example sometouch sensor panels that are suitable for combination with electronicsthat utilize mutual capacitance mode detection and that may includemulti-touch resolution capability, include two or more conductorpatterns that are overlaid. Two or more conductor patterns that areoverlaid can be generated by laminating two substrates together with aclear adhesive, each substrate having disposed on one its major surfacesa conductor micropattern according to the present disclosure. Suchlaminated articles can be visible light transparent when the substratesare transparent and when the conductor micropattern have high open areafraction. Examples of suitable substrates for forming laminatedconstructions include the polymeric film substrates listed above.

Examples of suitable adhesive materials for forming laminatedconstructions are optically clear adhesive that exhibit an opticaltransmission of at least about 90%, or even higher, and a haze value ofbelow about 5% or even lower. Optical transmission and haze can bemeasured by disposing it between a 25 micrometer Melinex® polyester film454 (from DuPont Company, Wilmington, Del.) and a A 75×50 millimeterplain micro slide (a glass slide from Dow Corning, Midland, Mich.) usinga Model 9970 BYK Gardner TCS Plus Spectrophotometer (from BYK Gardner,Columbia, Md.). Suitable optically clear adhesive may have antistaticproperties, is compatible with metal-based conductors, may be able to bereleased from the glass substrate by stretching the adhesive describedin Illustrative optically adhesive include those described in PCTInternational Publication No. WO 2008/128073 relating to antistaticoptically pressure sensitive adhesive, U.S. Patent ApplicationPublication Nos. US 2009-030084 A1 relating to stretch releasingoptically clear pressure sensitive adhesive, US 2010-0028564 A1 relatingto antistatic optical constructions having optically transmissiveadhesive, PCT International Publication Nos. WO 2009/114683 relating tooptically clear stretch release adhesive tape, WO 2010/019528 relatingto adhesives compatible with corrosion sensitive layers, and WO2010/078346 stretch release adhesive tape. In one embodiment, theoptically clear adhesive has a thickness of about 5 μm or less.

A substrate having the conductor micropattern disposed thereon, oralternatively a laminate comprising two or more substrates having theconductor micropatterns disposed thereon, can be further laminated to adisplay, for example a liquid crystal display (LCD), an organiclight-emitting diode (OLED) display, a plasma display panel (PDP), anelectophoretic display (EP), or an electrowetting display. Such asubstrate or laminate can be laminated to the display using thereferenced adhesive materials. A substrate having the conductormicropattern disposed thereon, or alternatively a laminate comprisingtwo or more substrates having the conductor micropatterns disposedthereon, can be further laminated to another material, for example arigid support such as a thick (e.g., 1 millimeter) polymer sheet orglass sheet. Examples of rigid supports include the lenses of mobilehandheld devices such as mobile phones or smart phones.

In some embodiments, a conductor micropattern as described herein isdisposed on more than one side of a substrate, for example on each majorsurface of a flat substrate that may be flexible or rigid, as alreadydescribed. For applications that require two conductor micropatternsthat are nominally parallel in orientation and spaced apart in thedirection normal to the micropatterns, it may be advantageous for thetwo micropatterns to be disposed on each side of the same flatsubstrate, for example on each side of a polymer film.

Applications

In some embodiments, the articles described herein comprise a conductormicropattern comprising non-linear traces defining an open micropatternof a cell geometry disposed on or in a visible light transparentsubstrate. In some such embodiments, the conductor micropattern forms atleast a portion of an EMI shield. In some such embodiments, theconductor micropattern forms at least a portion of an antenna. In somesuch embodiments, the conductor micropattern forms at least a portion ofa touch sensor (for example a touch screen sensor). In some embodiments,the conductor micropattern forms at least a portion of a projectedcapacitive touch screen sensor. For example, two overlayingmicropatterns (e.g., disposed on opposite sides of the same substrate oron separate substrates, laminated together), in the form of contiguousmesh elements in the shapes of row and column bars in the respectivemicropatterns can form a transparent matrix of sensor elements that canbe driven with electronics (i.e., touch sensor drive device) that allowdetection of touch events to the sensor through measurements ofself-capacitance or mutual capacitance of the elements, as is known inthe art (and as elaborated upon in a later example). Examples of touchsensor drive devices are given in U. S. Patent Publication No.US2010/073323, PCT Patent Publication No. WO2011/069114, and U.S. Pat.No. 7,288,946. In some such embodiments, the conductor micropatternforms at least a portion of a display electrode, for example acounterelectrode, for example a counterelectrode in an electrophoreticdisplay.

In some embodiments, the articles described herein comprise a firstconductor micropattern comprising non-linear traces defining a firstopen micropattern of a cell geometry disposed on or in a visible lighttransparent substrate and a second conductor micropattern comprisingnon-linear traces defining a second open micropattern of a cell geometryelectrically isolated from the first conductor micropattern. The secondconductor micropattern may be disposed on the same substrate as thefirst conductor micropattern, or it may be disposed on anothersubstrate. The second conductor micropattern overlays the firstconductor micropattern.

In some embodiments, both conductor micropatterns form at least aportion of a touch sensor, for example a touch screen sensor.

In some embodiment, both conductor micropatterns form at least a portionof an electrophoretic display.

Alternatively, in another embodiment, one of the conductor micropatternsforms at least a portion of a touch sensor, for example a touch screensensor, and the other conductor micropattern may function as an antennafor wireless communication.

In yet another embodiment, one of the conductor micropatterns forms atleast a portion of a touch sensor, for example a touch screen sensor,and the other conductor micropattern may function as an electromagneticinterference (EMI) shield.

In yet another embodiment, one of the conductor micropatterns forms atleast a portion of an antenna for wireless communication and the otherconductive micropattern may function as an electromagnetic interference(EMI) shield.

EXAMPLES

Substrates

Two different substrates were used in this example section.

A first substrate was a visible light transparent substrate ofpolyethylene terephthalate (“PET-3”) having a thickness of approximately125 micrometers, commercially available as product number ST504 fromE.I. du Pont de Nemours, Wilmington, Del. was used.

A second substrate was a structured triacetate film (“Structured TAC”)prepared according to the disclosure of WO 2010/07871 A1. The startingsubstrate was a cellulose triacetate film having a thickness of 75micrometers (commercially available from Island Pyrochemical IndustriesCorp., New York, N.Y.). This TAC film was thus modified to contain ananostructure on a first surface of the substrate. The nanostructuredsurface exhibited a reflectance of 0.1-0.2%. The nanostructured surfaceexhibited a transmitted haze of 0.2-0.4%. The nanostructured surfacecomprised nanofeatures that were 100 to 250 nanometers in height. Theheight to width ratio (anisotropy) of the nanofeatures was greater thanone.

Conductor

Onto the PET substrate or the Structured TAC substrate was deposited thefollowing conductive coatings:

(1) a “sputtered silver” film, which is a multilayer construction of 5angstrom thick of titanium disposed directly on the substrate followedby 100 nanometers thick of silver, both deposited using known vacuumsputtering methods, or

(2) an “evaporated silver” film, which is a multilayer construction of 5angstrom thick of titanium disposed directly on the substrate followed100 nanometer thick of silver, both deposited using known electron-beamevaporation methods;

After deposition of the conductive coating, the substrate has a coatedside containing the conductive coating and an opposite side, i.e., sidewith no conductive coating.

The conductive coating used for each geometry for examples herein waspatterned by printing octadecylthiol self-assembled monolayer mask onits surface, followed by wet chemical etching, as described in U.S.Patent Application Publication No. US 2009/0218310.

Characterization of Substrate

The average percent reflection (% R) was used to measure both majorsurfaces (coated and bare sides) of the substrate (whether PET orStructured TAC) using a BYK Gardner color guide sphere.

One sample of each film was prepared by applying Yamato Black Vinyl Tape#200-38 (commercially available from Yamato International Corporation,Woodhaven, Mich.) to the opposite side of the measuring surface using aroller to minimize trapping air bubbles. To measure the surface total %reflection (specular and diffuse), the non-taped side of the sample wasplaced against an aperture of BYK Gardiner Color-Guide Sphere. The %reflection was measured at 10° incident angle for the wavelength rangeof 400 to 700 nm. Note that when reflectivity is measured from the bareside (i.e., opposite the conductor-coated side), the measuredreflectivity includes reflection from the interface between thesubstrate film and air. The % R for the substrates with the conductorsare shown in Table 1 below

TABLE 1 Reflectance measurements Reflectance Reflectance SubstrateConductive (%), measured (%), measured Type Coating Type from coatedside from bare side PET-3 Sputtered Ag 93.71 88.68 PET-3 Evaporated Ag92.65 88.89 Structured Sputtered Ag 79.44 7.52 TAC

Comparative Example C1

This example was made by using PET substrate and Sputtered Ag conductorusing a regular hexagon conductor micropattern. The trace widths wereapproximately 2 micrometers. The diameter of the hexagonal cells (fromface to parallel face) was approximately 200 micrometers. The open areafraction was approximately 98%.

Comparative Example C2

This example was made by using PET substrate and Sputtered Ag conductorusing a regular hexagon conductor micropattern. The trace widths wereapproximately 2 micrometers. The open area fraction was approximately98%.

Examples 3 Through 6

These examples were made by using the Structured TAC substrate andSputtered Silver conductor with a regular hexagonal micropattern (Ex.3), a pseudorandom hexagonal micropattern (Ex. 4), a partially curvedhexagonal micropattern (Ex. 5) and a fully curved hexagonal micropattern(Ex. 6). In all cases, the trace widths were approximately 2 micrometersand the open area fractions were approximately 98%.

Example 7

This example can be made using the Structured TAC substrate andSputtered Silver conductor with a pseudorandom curved micropattern.

In this Example section, there are no examples 8, 9 or 10.

TABLE 2 Summary of the examples Example Substrate Conductive PatternDesign Number Type Coating Type Type C1 PET Sputtered Ag regular hexagonC2 PET Sputtered Ag pseudorandom hexagon 3 Structured TAC Sputtered Agregular hexagon 4 Structured TAC Sputtered Ag pseudorandom hexagon 5Structured TAC Sputtered Ag partially curved hexagon 6 Structured TACSputtered Ag fully curved hexagon 7 Structured TAC Sputtered Agpseudorandom curvedCharacterization of the Articles

Laminated articles having one or more conductor micropatterns wereevaluated for the conspicuity of their micropatterns under sunlightillumination. The evaluation included visual inspection withoutmagnification (unaided eye). The samples were further imaged using adigital camera (iPhone 3GS, Apple Computer Corp, Cupertino, Calif.). Thesunlight illumination upon each sample was first attenuated by passagethrough a typical commercial architectural double-pane insulated glassunit window having a semi-reflective energy-management film applied, inorder to reduce the intensity of light reaching the eye or the camera toa more suitable level for viewing or recording. A number of visualeffects contributed to the conspicuity of the various micropatterns. Afirst such visual effect category is described herein as “starburst,”which takes the form of a bright reflective pattern in the shape of amulti-pointed star when illuminated with bright (non-diffuse) sunlight.A regular hexagonal mesh can give rise to a six-pointed starburst. Aregular square mesh can give rise to a four-pointed starburst. A secondvisual effect category is described herein as “rainbow,” which takes theform of a band of reflection exhibiting a spectrum of colors along theband when illuminated with bright (non-diffuse) sunlight. A third visualeffect category is described herein as “colored halo,” which takes theform of diffuse pink and green halos that surround the point of directspecular reflection when illuminated with bright (non-diffuse) sunlight.A fourth visual effect category is described herein as “sparkle,” whichtakes the form of bright points of light across the micropattern whenilluminated with bright (non-diffuse) sunlight.

TABLE 3 Results of visual inspection for conductor micropattern examplesExample Starburst Rainbow Colored Halo Sparkle Number Score Score ScoreScore C1

⊕ ⊕ C2

⊕ ⊕

3 ⊕ ⊕ ⊕ ⊕ 4 ⊕ ⊕ ⊕ ⊕ 5 ⊕ ⊕ ⊕ ⊕ 6 ⊕ ⊕ ⊕ ⊕

The data in TABLE 3 in terms of score for starburst, rainbow, sparkleand colored halo are reported in terms of an acceptable visualappearance score, represented by ⊕ and an unacceptable visual appearancescore

. In determining the score, an acceptable score did not imply a totalabsence of the visual artifact (whether it is a starburst, rainbow, haloor sparkle) but, if present, the level of the artifact is at a levelwhere it may be acceptable to a user (at least, more acceptable than forexamples scored with

). For Examples 3-6, as compared with C1 and C2, an improvement inappearance (less conspicuous features of the micropattern) was achievedfor evaluation from either direction, relative to the micropattern(i.e., from the substrate film (nanostructure surface) side or from theside opposite the substrate film). The improvement (reduced conspicuity)was greater for evaluation (viewing) from the substrate film side.

Results of electrical and transmitted optical measurements for laminatedconductor micropattern examples are reported in Table 4. Entriesassigned to TAC and PET were derived from measurements made for eachsubstrate type, laminated to glass as described above (baseline data).The light transmittance (% T), clarity (% C), and transmitted haze (% H)were measured using a Haze-Gard Plus (BYK-Gardner, Columbia, Md.).

TABLE 4 % T % H % C % T % H % C Sheet Example Film Film Film Glass GlassGlass Resist Number Side Side Side Side Side Side (ohm/sq) C1 90.2 2.1799.5 90.1 2.08 99.6 30 C2 90.1 2.59 99.5 90.1 2.64 99.5 28 3 90.8 2.2099.4 90.5 2.25 99.4 59 4 90.6 2.68 99.5 90.3 2.78 99.5 100 5 91.1 1.8999.5 90.9 1.82 99.5 42 6 91.2 2.09 99.5 91.1 2.04 99.5 40 TAC 93.9 0.72100 93.9 0.69 100 N/A PET 91.8 0.60 100 91.8 0.60 100 N/A

Results of reflectance measurements for laminated conductor micropatternexamples are reported in Table 5. Entries assigned to TAC and PET werederived from measurements made for each substrate type, laminated toglass as described above (baseline data). As shown in Table 5, themicropattern contributes less reflectance when disposed on thenanostructured substrate surface (that is antireflective when exposed toair), as compare with identical micropatterns disposed on standardsubstrate film (PET), when the former is when viewed and measured fromthe substrate side of the micropattern.

TABLE 5 % Reflectance % Reflectance Contribution Contribution % R from %R from Example Film Micropattern Glass Micropattern Number Side (FilmSide) Side (Glass Side) C1 10.1 1.0 10.0 0.9 C2 10.2 1.0 10.2 1.1 3 7.20.2 8.3 1.3 4 7.3 0.3 8.1 1.1 5 7.5 0.5 8.7 1.7 6 7.3 0.3 8.4 1.3 TAC7.0 N/A 7.0 N/A PET 9.2 N/A 9.1 N/ATest MethodsReflectance Test Method 1(Determination of the Front Surface Reflectance of a Transparent Film)

Average total (diffuse and specular) light reflectance (% R) of a filmwas measured using a Spectro-Guide Sphere w/Gloss instrument(commercially available as model number CD-6834 from BYK-Gardner USA,Columbia, Md.). Reflectance Test Method 1 included a procedure forremoving the contribution to measured reflectance from the backsidesurface film sample (i.e., the interface that the backside surface makeswith air), thereby yielding a measurement result that was associatedwith the interface between the film front side surface (surface ofinterest) and air. The backside surface reflectance of the film wasremoved from the measurement by applying black vinyl tape to the filmback side (“black tape, commercially available as Yamato Black VinylTape #200-38, from Yamato International Corporation, Woodhaven, Mich.).The black tape was laminated to the back side of the film using a rollerto ensure there were no air bubbles trapped between the black tape andthe sample. The % R for the front surface of the film sample wasdetermined by first placing the film front surface against the apertureof the Spectro-Guide and taking the total reflectance reading (average %R from 400 nm to 700 nm wavelength), with black tape applied to the backside. Secondly, the result of this measurement was modified bysubtracting the known total reflectance of the film back side interfacewith black tape, determined separately. The result of this measurement,with the subsequent subtraction of the black tape interface reflectance,is reported herein as “% R substrate front surface” by Reflectance TestMethod 1.

Reflectance Test Method 2

(Determination of the Front Surface Reflectance of a Transparent Film)

Reflectance was measured using a HunterLab Ultrascan PRO (HunterAssociates Laboratory Inc., Reston, Va.). Sample films were placeddirectly over the instrument aperture and illuminated using a d/8°geometry under D65 illuminant condition. Samples were placed with thebase film front (nanostructured) surface against the aperture. A lighttrap was placed against the sample and in alignment with the instrumentaperture. In order to isolate the reflectance from the nanostructuredsubstrate front surface, the reflectance from the substrate back sidesurface was subtracted. A reflectance value equal to half of the basefilm reflectance (no additional coatings or nanostructure) was taken tobe the reflectance of the back side of the nanostructured substrate.Results were recorded at 5 nm intervals between 350 and 1050 nm. Totalreflectance (% R) is reported as an average of the reflectance valuesbetween 400 and 700 nm. The result of this measurement is reportedherein as “% R substrate front surface” by Reflectance Test Method 2.

Reflectance Test Method 3

(Determination of the Reflectance of the Interface Between Metallizationand Substrate)

This test method is suitable for metallized substrates where themetallization has low or high optical density (i.e., light transmissionbetween 0 and 80%). Average total (diffuse and specular) lightreflectance (% R) of a film was measured using a Spectro-Guide Spherew/Gloss instrument (commercially available as model number CD-6834 fromBYK-Gardner USA, Columbia, Md.). The instrument was used to make ameasurement of a metallized transparent substrate (e.g., polymer filmsubstrate) from the side opposite the metallization. As such, themeasurement method was used to determine the reflectance of theinterface between the metallization and the substrate (i.e., reflectancefrom the metallization, in the direction facing the substrate).Reflectance Test Method 3 included a procedure for minimizing thecontribution to measured reflectance from the exposed metal surface,when the metallization is semi-transparent (i.e., from the interfacethat the exposed thin film metal makes with air). Reflectance TestMethod 3 included application of black vinyl tape to the exposed metalsurface (“black tape, commercially available as Yamato Black Vinyl Tape#200-38, from Yamato International Corporation, Woodhaven, Mich.). Theblack tape was laminated to the exposed surface of the metallizationusing a roller to ensure there are no air bubbles trapped between theblack tape and the sample. The % R for the metallized film sample wasdetermined by first placing the substrate (side opposite themetallization) against the aperture of the Spectro-Guide and taking thetotal reflectance reading (average % R from 400 nm to 700 nmwavelength). Secondly, the result of this measurement (just described)was modified by subtracting the known approximate total reflectance ofthe exposed substrate interface with air (surface), which was in theoptical path between the instrument and the metallization interface withthe substrate. The result of this measurement, with the subsequentsubtraction of the substrate surface reflectance, is reported herein as“% R metal interface with substrate” by Reflectance Test Method 3.

Reflectance Test Method 4

(Determination of the Reflectance of the Interface Between Metallizationand Substrate)

This test method is suitable for metallized substrates where themetallization has high optical density (i.e., low light transmission,for example less than 5%, 2%, or 1%). Average total (diffuse andspecular) light reflectance (% R) of a film was measured using aSpectro-Guide Sphere w/Gloss instrument (commercially available as modelnumber CD-6834 from BYK-Gardner USA, Columbia, Md.). The instrument wasused to make a measurement of a metallized transparent substrate (e.g.,polymer film substrate) from the side opposite the metallization. Assuch, the measurement method was used to determine the reflectance ofthe interface between the metallization and the substrate (i.e.,reflectance from the metallization, in the direction facing thesubstrate). The % R for the metallized film sample was determined byfirst placing the substrate (side opposite the metallization) againstthe aperture of the Spectro-Guide and taking the total reflectancereading (average % R from 400 nm to 700 nm wavelength). Secondly, theresult of this measurement (just described) was modified by subtractingthe known approximate total reflectance of the exposed substrateinterface with air (surface), which was in the optical path between theinstrument and the metallization interface with the substrate. Theresult of this measurement, with the subsequent subtraction of thesubstrate surface reflectance, is reported herein as “% R metalinterface with substrate” by Reflectance Test Method 4.

Reflectance Test Method 5

(Determination of the Reflectance of the Exposed Surface of aMetallization on a Substrate)

This test method is suitable for metallized substrates where themetallization has high or low optical density (i.e., light transmissionbetween 0 and 80%). Average total (diffuse and specular) lightreflectance (% R) of a film was measured using a Spectro-Guide Spherew/Gloss instrument (commercially available as model number CD-6834 fromBYK-Gardner USA, Columbia, Md.). The instrument was used to make ameasurement of a metallized transparent substrate (e.g., polymer filmsubstrate) from the side of the metallization. As such, the measurementmethod was used to determine the reflectance of the exposed surface ofthe metallization. Reflectance Test Method 5 included a procedure forminimizing the contribution to measured reflectance from the back filminterface, when the metallization is semi-transparent (i.e., from theinterface that the exposed film makes with air). Reflectance Test Method5 included application of black vinyl tape to the exposed metal surface(“black tape, commercially available as Yamato Black Vinyl Tape #200-38,from Yamato International Corporation, Woodhaven, Mich.). The black tapewas laminated to the surface of the polymer film opposite themetallization using a roller to ensure there are no air bubbles trappedbetween the black tape and the sample. The % R for the metallized filmsample was determined by first placing the substrate (side that includesthe metallization) against the aperture of the Spectro-Guide and takingthe total reflectance reading (average % R from 400 nm to 700 nmwavelength). The result of this measurement is reported herein as “% Rmetal exposed surface” by Reflectance Test Method 5.

Reflectance Test Method 6

(Determination of the Reflectance of the Exposed Surface of aMetallization on a Substrate)

This test method is suitable for metallized substrates where themetallization has high optical density (i.e., low light transmission,for example less than 5%, 2%, or 1%). Average total (diffuse andspecular) light reflectance (% R) of a film was measured using aSpectro-Guide Sphere w/Gloss instrument (commercially available as modelnumber CD-6834 from BYK-Gardner USA, Columbia, Md.). The instrument wasused to make a measurement of a metallized transparent substrate (e.g.,polymer film substrate) from the side of the metallization. As such, themeasurement method was used to determine the reflectance of the exposedsurface of the metallization. The % R for the metallized film sample wasdetermined by first placing the substrate (side that includes themetallization) against the aperture of the Spectro-Guide and taking thetotal reflectance reading (average % R from 400 nm to 700 nmwavelength). The result of this measurement is reported herein as “% Rmetal exposed surface” by Reflectance Test Method 6.

Conductance Test Method

To determine electrical conductance (expressed in Siemens (S) or Mhos;inverse of sheet resistance), a sample of metallized substrate measuringat least 5 cm×5 cm in area was placed in the measurement region of anon-contact conductance meter (commercially available as Model 717 fromDelcom Instruments, Prescott, Wis.). The conductance is symbolizedherein by the small-case greek letter sigma, a. The sample was spacedupward from the base of the instrument in the measurement region byinclusion of a standard index card. This test method was used both forblanket metallized (i.e., non-patterned) substrates and for substratewith conductor micropatterns present thereon. In some examples where theconductance of a metallized, nanostructured substrate is reported below,conductance was also measured for the same metallization applied to anon-nanostructured (“flat”) substrate (PET-2 or -6). The conductancevalue for the same metallization on the flat substrate is reported below(“a PET”), for such cases. Additionally, a value labeled below as“fraction retained σ” was calculated. The fraction retained conductanceis the quantity given by dividing the measured conductance for themetallization applied to the nanostructure substrate surface by themeasured conductance for the same metallization applied to a flatsubstrate.

Transmitted Light Optical Property Test Method

To determine the visible light transmittance (% T), haze (% H), andclarity (% C) of a sample, it was placed in the measurement region of atransmittance, haze, and clarity instrument (commercially available asHaze-Gard Plus (illuminant C) from BYK-Gardner USA, Columbia, Md.). Theinstrument was used for the characterization of substrates, substrateswith conductor micropatterns thereon, or laminated constructions thatincluded substrates (with or without conductor micropatterns thereon).

Nanostructure Depth Measurement by TEM

Selected substrates having a surface nanostructure and a metallizationdisposed thereon were examined in cross section by transmission electronmicroscopy (TEM). The samples were prepared by standard room temperatureultramicrotomy at 90 nm thickness. Samples were cut and then dried withHe to avoid silver oxide growth. The sectioned samples were examinedusing a Hitachi H-9000 TEM at 300 kV. Measurements were made oncalibrated bright field images. The extent of penetration of metal intothe surface of the substrate was taken to be the depth of thenanostructure of the substrate. Results from this procedure were foundto be consistent with nanostructure depth measurement by TEM or scanningelectron microscopy (SEM) for substrate cross sections beforemetallization.

Nanostructure Depth Measurement by AFM

Selected substrates having a surface nanostructure were examined byatomic force microscopy (AFM). The instrument used for this analysis wasa Digital Instruments (Bruker) Dimension Icon System with a Nanoscope Vcontroller. The probes used were OTESPA or ScanAsyst Air. The data wereanalyzed using Nanoscope Analysis. The images were plane fitted toremove z-offset and tilt. Peak force tapping mode was used in order toobtain detailed images and more accurate mapping of the nanostructuretopography. A statistical distribution of elevation was determinedacross a sample region measuring 2 micrometers by 2 micrometers. Theelevation range associated with approximately 99% of the sampled area(i.e., removing outlier extremes in protrusion height and nanostructuredepth) was taken as the nanostructure depth.

Estimation of Volume and Weight % by Electron Microscopy

As the loading of silica particles is not provided as received from thesupplier, for Examples 11-27 the volume and weight % of silica particlesin the matrix was estimated by electron microscopic analysis.

Substrate Materials

The following examples include a variety of materials and chemicals.Regarding substrates, base films of poly(ethyleneterephthalate) (“PET”)and cellulose triacetate (“TAC”) were used. A variety of PET substrateswere used, according to the tables below. Abbreviations are used inorder to identify specific base film substrate that was used for eachexample, according to the following descriptions:

PET-1: 125 micrometer thick, hardcoated PET, commercially available fromToray Plastics (America), Inc., North Kingstown, R.I.) as product nameToray Tuftop THS.

PET-2: 50 micrometer thick, bare PET, prepared internally byconventional extrusion processing methods.

PET-3: 125 micrometer thick, heat-stabilized PET with adhesion promotioncoating on one side (side which was coated in the following examples,when coated with nanoparticle-filled materials), commercially availablefrom Dupont Teijin Films (Chester, Va.) as product name “ST504.”PET-4: 50 micrometer thick PET with adhesion promotion coating on oneside (side which was coated in the following examples, when coated withnanoparticle-filled materials), commercially available from DupontTeijin Films (Chester, Va.) as product name “618.”PET-5: 50 micrometer thick PET with adhesion promotion coating on bothsides, commercially available from Dupont Teijin Films (Chester, Va.) asproduct name “617.”PET-6: 75 micrometer thick heat-stabilized PET with adhesion promotioncoating on one side (side which was coated in the following examples,when coated with nanoparticle-filled materials), commercially availablefrom Dupont Teijin Films (Chester, Va.) as product name “ST580.”PET-7: 50 micrometer thick primed PET (further details available).PET-8: 50 micrometer thick PET (further details available).TAC: 75 micrometer thick TAC, commercially available from IslandPyrochemical Industries Corp. (New York, N.Y.).PC: 125 micrometer thick polycarbonate (further details available).The examples that follow include three types:

-   -   1. Nanostructured substrates with metallic conductor coatings        disposed thereon, useful for the preparation of further articles        of types 2 and 3;    -   2. Nanostructured substrates with metallic conductor        micropatterns disposed thereon, useful for preparation of        further articles of type 3;    -   3. Transparent touch sensor components comprising nanostructured        substrates with metallic conductor micropatterns disposed        thereon.

TABLE 6 Abbreviations and trade designations Abbreviation or TradeDesignation Description MPS 3-(methacryloyloxy)propyltrimethoxy silaneobtained from Alfa Aesar, Ward Hill, MA A1230 Nonionic silane dispersingagent with no radically reactive double bond functionality; obtainedunder the trade designation “SILQUEST A1230” obtained from MomentivePerformance Materials, Wilton, CT DI water De-ionized water Radical Aradical inhibitor obtained under the trade designation PROSTAB 5198”from BASF Inhibitor Corporation, Tarrytown, NY 1-methoxy-2- An alcoholobtained from Aldrich Chemical, Milwaukee, WI propanol NALCO 2327Colloidal silica having a nominal particle size of 20 nm particle sizeobtained under the trade designation “NALCO 2327” from Nalco CompanyNALCO 2329 Colloidal silica having a nominal particle size of 75 nmparticle size obtained under the trade designation “NALCO 2329” fromNalco Company NALCO 2329+ Colloidal silica having a nominal particlesize of 115 nm particle size obtained under the trade designation “NALCO2329+” from Nalco Company MP4540 Colloidal silica having a nominalparticle size of 440 nm particle size obtained under the tradedesignation “MP4540” from Nissan Chemical, Houston, TX MP2040 Colloidalsilica nominal having a particle size of 190 nm obtained under the tradedesignation “MP2040” from Nissan Chemical MP1040 Colloidal silica havinga nominal particle size of 100 nm obtained under the trade designation“MP1040” from Nissan Chemical SR238 1,6 hexanediol diacrylate obtainedunder the trade designation “SR238” from Sartomer, Exton, PA SR506isobornyl acrylate obtained under the trade designation “SR506” fromSartomer SR295 Pentaerythritol tetraacrylate obtained under the tradedesignation “SR295” from Sartomer SR351 Trimethylolpropane triacrylateobtained under the trade designation “SR351” from Sartomer SR492Propoxylated trimethylolpropane triacrylate obtained under the tradedesignation “SR492” from Sartomer SR440 Isooctyl acrylate obtained underthe trade designation “SR440” from Sartomer IR 184 A photoinitiatorobtained under the trade designation “IGACURE 184” from BASFCorporation, Tarrytown, NY IPA Isopropyl alcohol obtained from AldrichChemical MEK Methyl ethyl ketone obtained from Aldrich Chemical TEGORADSilicone polyether acrylate obtained under the trade designation “TEGO ®Rad 2250” 2250 from Evonik Goldschmidt Corp., Hopewell, VA TEGORADsubstrate wetting, slip and flow additive obtained under the tradedesignation “TEGO ® 2300 Rad 2300” from Evonik Goldschmidt Corp. HFPOPrepared as Copolymer B in US2010/0310875 A1, Hao et. al.

Examples C3, 11 Through 68

Examples 11-68 include nanostructured substrates with metallic conductorcoatings disposed thereon. Comparative Example C3 is a commerciallyavailable poly(ethylene terephthalate) film. Table 7 summarizes theparameters that describe Examples C3, 11 through 68. Examples 11 through68 include a substrate having a nanostructured major surface. Thenanostructured major surfaces were created by reactive ion etchingcoating deposits on a polymer base films, as described below. Thecoating deposits included composite compositions comprising a matrix anda nanoscale dispersed phase, as described below. Note that themetallized, nanostructured substrates of Examples 11-68 can be furtherprocessed by printing a self-assembled monolayer mask (e.g., by stampingwith an elastomeric relief stamp that has been inked with aself-assembled monolayer-forming molecule such as an alkylthiol, such as1-octadecylthiol) in the form of a micropattern, followed by selectivelyetching the metal coating from the nanostructured surface in regions notprotected by the monolayer. The printing and etching steps yield ametallic conductor micropattern according to the micropattern ofself-assembled monolayer, disposed on the nanostructured surface. Themicropattern can have geometry or characteristics as describedthroughout the present application.

For Examples 11 through 27, a visible light transparent, nanoparticlehardcoat film was used (commercially available as Toray THS from TorayPlastics (America), Inc., North Kingstown, R.I.). The hardcoat filmincluded a base substrate of poly(ethyleneterephthalate) and a hardcoatcoating comprising a polymer matrix and nanoparticle filler dispersedtherein. The hardcoat coating was anisotropically etched with achemically reactive O₂ plasma (“reactive ion etch” step; as describedpreviously in WO2011139593A1) for varying etch times, in order to yieldnanostructured surfaces of varying nanostructure depth (i.e.,protrusions of varying height). The Toray THS film comprises hardcoatcoating on one surface, in the form of a 3 micron micrometer thickcoating of a composite material. The hardcoat coating comprises anorganic polymeric matrix and a particulate silica dispersed phase withparticle size of approximately 15-18 nm, present at a loading ofapproximately 6 vol % (as determined by transmission electronmicroscopy). The etched, nanostructured coatings with varyingnanostructure depth were deposited with a silver thin film coating(“metallization” step; approximately 5 angstroms of titanium as anadhesion promotion material, followed by silver, both deposited byconventional sputtering methods). The average thickness of silver isgiven in Table 8. For selected samples, the heights of the protrusivefeatures resulting from reactive ion etching under selected conditionswere determined by conventional methods of transmission electronmicroscopy, and are given in Table 8. For examples 20 through 27,exposed silica nanoparticles were removed between the reactive ion etchstep and the metallization step. As noted in Table 7, silica removal insome cases was achieved by exposing (1 minute) the reactive ion etchedsurface to a solution having hydrofluoric acid (10:1 dilution of etchantthat is commercially available as TFT from Transene Company, Inc,Danvers, Mass.). As also noted in Table 7, silica removal in some caseswas achieved by exposing (30 sec) the reactive ion etched surface to aNF₃ plasma. Lastly silica removal was achieved by exposing (5 minutes)the reactive ion etched surface to a 5 wt % NaOH solution at 90-100° C.

For Examples C3 and 28 through 36, a visible light transparent substrateof polyethylene terephthalate (“PET”) having a thickness ofapproximately 75 micrometers was used (commercially available as productnumber ST580, DuPont Teijin Films, Chester, Va. Different compositecoatings were deposited on pieces of the PET substrate by conventionalsolvent coating methods. The coatings included a prepolymer blendcomprising three monomers: 40% Sartomer 295 (PentaerythritolTetraacrylate), 40% Sartomer 238 (1,6 hexanediol diacrylate), and 20%Sartomer 506 (Isobornyl Acrylate), Sartomer, Exton, Pa. The compositecoatings further comprised silica nanoparticles with a size (diameter)of approximately 20 nm. Solutions for casting the composite coatingswere prepared by dissolving the monomer blend in 1-methoxy-2-propanolsolutions of the 20 nm silica particles (40 wt %) (Nalco 2327, NalcoChemical Company, Naperville, Ill.) that had been surface functionalizedwith 3-(methacryloyloxy)propyl trimethoxy silane (MPS). Coatings wereformulated to give different weight fraction ratios of resin:particles:98:2, 96:4, 94:6, 92:8, 90:10, 85:15, 80:20, 50:50, 20:80. Irgacure® 184(Ciba Specialty Chemicals, Tarrytown, N.Y.) was included in all of theformulations at a level of 0.5 wt % of the weight of the final solidcomponents (particles and monomer). All of the solutions were dilutedwith 1-methoxy-2-propanol to a final % solids of 40%. For each coating,the solution was syringe-pumped through a coating die onto the PET film,dried at 65° C. and cured by using a UV processor equipped with a H-Bulbunder a nitrogen atmosphere at 10 fpm. The coated article was furthersubject to roll-to-roll O₂ plasma etch for 90 sec. The nanostructuredcoatings were deposited with a silver thin film coating (“metallization”step; approximately 5 angstroms of titanium as an adhesion promotionmaterial, followed by silver, both deposited by conventional sputteringmethods).

For examples 37 through 68, a visible light transparent substrate ofpolyethylene terephthalate (“PET”) having a thickness of approximately75 micrometers was used (commercially available as product number ST580,DuPont Teijin Films, Chester, Va. Different composite coatings weredeposited on pieces of the PET substrate by hand spread coating. Thecoatings included a matrix comprising a monomer blend: 75/25 SR351/SR238(Sartomer, Exton, Pa.). The composite coatings further comprised silicananoparticles with a size (diameter) of approximately 75 nm. Forexamples 37 through 58, solutions for casting the composite coatingswere prepared by dissolving the monomer blend in IPA solutions of the 75nm silica particles (40 wt %) (Nalco 2327, Nalco Chemical Company,Naperville, Ill.) that had been surface functionalized with MPS.Coatings were formulated to give different weight fraction ratios ofresin:particles: 86:14, 82:18, 78:22, 74:26, 70:30, 65:35. Irgacure® 184(Ciba Specialty Chemicals, Tarrytown, N.Y.) was included in all of theformulations at a level of 3.0 wt % of the weight of the final solidcomponents (particles and monomer). For examples 59 through 68,solutions for casting the composite coatings were prepared by dissolvingthe monomer blend in IPA solutions of the 190 nm silica particles (40 wt%) (Nissan MP2040, Nissan Chemical Industries Ltd., Tokyo, Japan) thathad been surface functionalized with MPS. Coatings were formulated togive two weight fraction ratios of resin:particles: 75:25 and 65:35.Irgacure® 184 (Ciba Specialty Chemicals, Tarrytown, N.Y.) was includedin the formulations at a level of 1.0 wt % of the weight of the finalsolid components (particles and monomer). All of the solutions werediluted with IPA to a final % solids of 40% and then coated by handspread coating with #4 Myer Rod. The coated article was further subjectto roll-to-roll O₂ plasma etch for various durations under oxygenstarved conditions at a flow rate of 50 sccm (0.0025 sccm/cm²). Thepressure during deposition equilibrated at 4 mTorr. The nanostructuredcoatings were deposited with a silver thin film coating (“metallization”step; approximately 5 angstroms of titanium as an adhesion promotionmaterial, followed by silver, both deposited by conventional sputteringmethods).

Data for the various nanostructured coatings are listed in Tables 7 and8, including the reflectance of interface between the metallization andthe substrate. As compared with reflectance for silver deposited on PET,the nanostructured substrates impart a reduced reflectivity (ordarkening) to silver coatings deposited thereon, particularly whenmeasured through transparent substrate (i.e., from the side of thesubstrate opposite the silver deposit).

In Table 7, the reflectance of the base film front surface, or of ananostructured surface formed thereon, was measured by differentmethods. For Examples C3, 11-27 and 37-68, this reflectance was measuredby Reflectance Test Method 1. For Examples 28-36, this reflectance wasmeasured by Reflectance Test Method 2. The reflectance of C3(unmetallized, Tables 7 and 9) was measured by Reflectance Test Method 1on the unprimed side, that which metallized, yielded the propertiesgiven in Tables 8 and 11.

In Table 8, different methods for determining the reflectance of theinterface between the metallization and substrate were applied.Additionally, different methods for determining the reflectance of theexposed surface of a metallization on a substrate were applied. ForExamples 11-19 Reflectance Test Methods 3 and 5 were used. For theremainder of the Examples, Reflectance Test Methods 4 and 6 were used.The reflectance values for C3 (metallized, Tables 8 and 11) weremeasured by Reflectance Test Methods 4 and 6. The Ag thickness andnanostructure depth were determined by TEM analysis.

TABLE 7 Composition & experimental parameters for making RIEnanostructured substrates % R, SiO₂ SiO₂ SiO₂ RIE substrate Base sizeloading loading time SiO₂ front Example # Film (nm) (wt %) (vol %) (sec)removal surface % T % H C3 PET-6 — — — — 6.56 92.1 0.78 11 PET-1 15-1810 6   17.6 — 2.36 94.7 0.86 12 PET-1 15-18 10 6 30 — 0.26 96.5 0.88 13PET-1 15-18 10 6  60* — 0.17 96.4 0.94 14 PET-1 15-18 10 6 90 — 0.1396.4 0.89 15 PET-1 15-18 10 6  102.4 — 0.14 96.4 1.03 16 PET-1 15-18 106 60 — 0.17 96.6 1.11 17 PET-1 15-18 10 6 60 — 0.15 96.4 0.84 18 PET-115-18 10 6 30 — 0.70 96.2 0.84 19 PET-1 15-18 10 6 90 — 0.13 96.4 0.9720 PET-1 15-18 10 6   17.6 HF — 94.0 1.43 21 PET-1 15-18 10 6 30 HF —95.0 1.09 22 PET-1 15-18 10 6 60 HF 0.27 95.6 1.04 23 PET-1 15-18 10 690 HF 0.20 95.4 0.86 24 PET-1 15-18 10 6  102.4 HF 0.16 95.5 1.22 25PET-1 15-18 10 6 90 30 sec NF3 0.30 96.4 1.34 26 PET-1 15-18 10 6  102.430 sec NF3 0.19 96.4 1.76 27 PET-1 15-18 10 6 90 NaOH — — — 28 PET-6 202 1.1 90 — 1.87 93.8 0.97 29 PET-6 20 4 2.2 90 — 1.20 94.4 1.19 30 PET-620 6 3.4 90 — 1.03 94.5 1.39 31 PET-6 20 8 4.6 90 — 1.21 94.3 1.26 32PET-6 20 10 5.8 90 — 1.03 94.4 1.14 33 PET-6 20 15 8.8 90 — 1.00 94.60.76 34 PET-6 20 20 12.1 90 — 1.13 94.4 0.72 35 PET-6 20 50 35.5 90 —1.11 94.5 0.52 36 PET-6 20 80 68.8 90 — 2.64 93.0 1.21 37 PET-6 75 148.5 60 — 1.55 94.5 0.38 38 PET-6 75 14 8.5 90 — 1.33 94.6 0.57 39 PET-675 14 8.5 120  — 1.54 94.4 0.89 40 PET-6 75 14 8.5 150  — 1.60 94.1 1.9241 PET-6 75 18 11.1 60 — 1.38 94.5 0.47 42 PET-6 75 18 11.1 90 — 1.4294.5 0.70 43 PET-6 75 18 11.1 120  — 1.69 94.4 0.88 44 PET-6 75 18 11.1150  — 1.59 94.2 1.82 45 PET-6 75 22 13.8 60 — 1.26 94.5 0.43 46 PET-675 22 13.8 90 — 1.54 94.5 0.84 47 PET-6 75 22 13.8 120  — 1.57 94.1 1.0648 PET-6 75 22 13.8 150  — 1.44 94.1 1.39 49 PET-6 75 26 16.6 60 — 1.2994.8 0.47 50 PET-6 75 26 16.6 90 — 1.75 94.1 0.61 51 PET-6 75 26 16.6150  — 1.71 94.5 1.14 52 PET-6 75 30 19.6 60 — 1.33 94.7 0.45 53 PET-675 30 19.6 90 — 1.86 94.3 0.62 54 PET-6 75 30 19.6 120  — 1.64 94.4 0.7255 PET-6 75 30 19.6 150  — 1.71 94.1 1.26 56 PET-6 75 35 23.4 60 — 1.4294.7 0.47 57 PET-6 75 35 23.4 90 — 1.68 94.1 0.55 58 PET-6 75 35 23.4150  — 1.56 93.9 0.83 59 PET-6 190 25 15.9 50 — 1.34 95.5 1.15 60 PET-6190 25 15.9 60 — 1.34 95.8 1.32 61 PET-6 190 25 15.9 83 — 0.96 95.2 1.1762 PET-6 190 35 23.4 50 — 1.05 95.4 4.15 63 PET-6 190 35 23.4 60 — 1.1794.8 1.19 64 PET-6 190 35 23.4   83.3 — 0.85 95.8 1.22 65 PET-6 190 5036.2 50 — 1.03 95.8 1.02 66 PET-6 190 50 36.2 60 — 1.01 96.1 1.03 67PET-6 190 50 36.2   83.3 — 0.90 96.1 0.96 68 PC 190 67.5 53.3 20 — 0.75— 0.75

TABLE 8 Properties and dimensions for metallized RIE nanostructuredsubstrates % R, metal % R, metal Ag Nanostructure inferface with exposedσ σ, PET Fraction thickness depth by TEM Example # substrate surface(Mhos) (Mhos) retained σ (nm) (nm) C3 79.8 89.9 — 4.12 — 148 — 11 63.994.7 3.71 3.34 1.11 173 61 12 43.3 95 5.91 5.00 1.18 — — 13 14.1 92.53.50 3.34 1.05 167 132 14 10.9 93.4 5.61 5.00 1.12 228 183 15 9.4 80.92.93 3.34 0.88 172 201 16 22.7 93.7 6.73 5.69 1.18 258 142 17 9.3 59.00.47 0.98 0.48 79 119 18 30.5 90.9 1.43 1.67 0.85 110 91 19 7.4 58.10.70 1.67 0.42 — — 20 28.3 95.4 6.86 7.12 0.96 155 — 21 8.3 93.6 6.667.12 0.93 155 — 22 5.0 81.3 5.99 7.12 0.84 155 — 23 1.8 63.1 4.80 7.120.67 155 — 24 1.0 58.3 4.13 7.12 0.58 155 — 25 1.8 36.8 0.41 6.94 0.06150 — 26 1.5 42.2 0.48 6.94 0.07 150 — 27 5.0 72.7 5.68 7.37 0.77 185 —28 6.3 46.5 1.58 6.18 0.26 175 — 29 3.1 55.1 1.34 6.18 0.22 175 — 30 5.669.4 3.06 6.18 0.50 175 — 31 7.8 77.9 4.27 6.18 0.69 175 — 32 8.5 81.24.62 6.18 0.75 175 — 33 24.5 87.8 5.66 6.18 0.92 175 — 34 42.9 88.7 5.836.18 0.94 175 — 35 76.5 89.6 6.04 6.18 0.98 175 — 36 78.3 89.4 5.79 6.180.94 175 — 37 9.0 72.3 2.41 5.42 0.44 145 — 38 3.7 64.3 1.54 5.42 0.28145 — 39 3.2 60.1 0.85 5.42 0.16 145 — 40 2.6 52.9 0.17 5.42 0.03 145 —41 5.5 76.9 3.04 5.42 0.56 145 — 42 5.5 77.7 2.63 5.42 0.48 145 — 43 5.575.9 2.13 5.42 0.39 145 — 44 6.0 71.0 1.88 5.42 0.35 145 — 45 5.4 85.43.79 5.42 0.70 177.9 142.6 46 7.2 81.2 3.17 5.42 0.58 145 — 47 7.5 81.53.28 5.42 0.60 145 — 48 6.0 72.6 2.14 5.42 0.39 145 — 49 7.1 91.0 4.525.42 0.83 164.1 159.8 50 13.7 88.7 4.20 5.42 0.77 145 — 51 16.3 88.13.96 5.42 0.73 145 — 52 16.5 94.5 4.82 5.42 0.89 145 — 53 21.2 93.1 4.755.42 0.88 145 — 54 19.7 91.3 4.35 5.42 0.80 145 — 55 31.8 93.6 4.73 5.420.87 145 — 56 29.8 95.2 5.00 5.42 0.92 145 — 57 22.1 94.0 4.72 5.42 0.87145 — 58 23.3 92.2 4.63 5.42 0.85 145 — 59 14.7 65.2 2.68 5.42 0.49 145— 60 11.7 66.6 2.88 5.42 0.53 155.8 160.1 61 13.5 69.5 2.84 5.42 0.52145 — 62 7.3 47.3 1.83 5.42 0.34 145 — 63 10.4 53.6 1.98 5.42 0.36 145 —64 3.3 29.9 0.09 5.42 0.02 145 — 65 7.9 44.9 1.38 5.42 0.25 145 — 66 7.846.7 1.48 5.42 0.27 145 — 67 6.9 44.8 1.38 5.42 0.26 145 — 68 18.8 63.83.13 5.10 0.61 140 —

Examples 69-124

Examples 69-124 include nanostructured substrates with metallicconductor coatings disposed thereon. The nanostructured substrates wereprepared by depositing particle-filled composite coatings (i.e., adispersed phase and a matrix phase) on a major surface of a polymerfilm. The particle filled composite coatings were coated from coatingsolutions. The coatings were dried and cured to yield a nanostructuredexposed surface. Furthermore, each nanostructured substrate wasdeposited with a coating of silver on its exposed nanostructured surface(metallization step). The metallization step included sputter depositingan adhesion promotion layer of titanium with average thickness ofapproximately 5 angstroms, followed by sputter deposition of silver atthicknesses specified below. Each example is defined in terms of theparticle composition, particle size, particle loading (wt %, vol %), andparticle surface treatment composition, for the particles that werecontained in the coating solution, and therefore contained in theresulting composite coating. Each example is further defined in terms ofa matrix polymer that makes up a portion of the composite coating. Thematrix polymer chemical composition is specified below for each example.The coating solutions also contained photoinitiator, radical inhibitor,and one or more solvents. In some examples, the coating solution alsoincluded one or more other additives, as specified below.

The detailed description that follows for Examples 69-124 is dividedinto two sections. The first section describes preparation of thearticles. The second section reports results of characterization of thearticles. The first section begins by describing the general steps thatwere applied in order to make the articles, followed by a listing ofspecific details that make each example unique. Note that themetallized, nanostructured substrates of Examples 69-124 can be furtherprocessed by printing a self-assembled monolayer mask (e.g., by stampingwith an elastomeric relief stamp that has been inked with aself-assembled monolayer-forming molecule such as an alkylthiol, such as1-octadecylthiol) in the form of a micropattern, followed by selectivelyetching the metal coating from the nanostructured surface in regions notprotected by the monolayer. The printing and etching steps yield ametallic conductor micropattern according to the micropattern ofself-assembled monolayer, disposed on the nanostructured surface. Themicropattern can have geometry or characteristics as describedthroughout the present application.

Preparation of the Articles

General Preparation of Surface Modified Silica Submicrometer ParticleDispersions

Submicrometer silica particles (e.g., nanoparticles) were modified withdifferent ratios of two silane coupling agents, “MPS” and “A1230”. Fourdifferent surface modifier ratios were used. The molar ratios ofMPS:A1230 were as follows: 100:0, 75:25, 50:50 and 25:75. The particleswere modified while suspended in liquid medium, yielding silane modifiedparticle dispersions. Silane modified dispersions were prepared by firstmixing aqueous colloidal silica dispersion with a solution of1-methoxy-2-propanol and the silane coupling agent(s). The resultingmixture was then heated to facilitate reaction of the silane with thesilica particles. This resulted in a surface modified nanoparticledispersion with a solids content that was controlled in the range ofabout 10-21 weight % solids, and a 1-methoxy-2-propanol:water weightratio that was controlled in the range of about 65:35 to 57:43. Thedispersions were further processed in one of two ways to increase thesolids content and increase the 1-methoxy-2-propanol:water ratio.

In one procedure for increasing the solids content and the1-methoxy-2-propanol:water ratio, a solvent exchange process was firstused, wherein the surface modified nanoparticle dispersion wasconcentrated via distillation, followed by back-addition of more1-methoxy-2-propanol, and then followed again by concentration throughdistillation. In a second (alternative) procedure, the water and1-methoxy-2-propanol were evaporated to provide a dried surface modifiedparticle powder. The dried powder was then dispersed in a1-methoxy-2-propanol:water (88:12 weight ratio) mixture to be used forcoating formulations. For either procedure, the solids content of thefinal dispersion was found to be somewhat variable. In the case of thesolvent exchange procedure, the variability is believed to be dependenton the amounts of 1-methoxy-2-propanol and water that were removed inthe final distillation step. In the case of the dried powder procedure,the variability is believed to be due to variability in the residualsolvent content of the powder from batch to batch. In order to accountfor this variability and to assure accurate particle loading withinexample coating dispersions below, particle solids content wasgravimetrically determined for surface modified nanoparticles derivedfrom either procedure above, prior to preparation of the coatingformulations. A known amount of dispersion (1-4 grams, “wet weight”) wascharged to a small glass dish (of known weight, “tare weight”). The dishwas placed in a forced air oven (120° C.) for 45 minutes. The dish wasthen weighed again (“dry weight” of submicrometer particle plus tareweight of the dish).% solids=dry weight/wet weightGeneral Preparation of Radiation Curable Coating Solution:

The modified particle dispersion (above), a prepolymer blend, solvent(1-methoxy-2-propanol, unless stated otherwise), and 1 or 3% of IR 184(photoinitiator) were all mixed together to form coating solutions(about 40 wt. % total solids; i.e., weight of surface modifiedparticles, prepolymers, and photoinitiator, divided by total weight,equals 40%). The prepolymer blend comprised either i) pentaerythritoltetraacrylate, 1,6 hexanediol diacrylate, and isobornyl acrylate(“SR295”, “SR238”, “SR506”, respectively) in a 40:40:20 weight ratio, orii) propoxylated trimethylolpropane triacrylate, 1,6 hexanedioldiacrylate, and isooctyl acrylate (“SR492”, “SR238”, “SR440”,respectively) in a 40:40:20 weight ratio. In the coating solutions, theweight ratio of surface modified silica particles (5, 20, 75, 100, 115,190, or 440 nm) to total prepolymer (particle:prepolymer weight ratio)ranged from 57.5:42.5 to 80:20. In some cases a low surface energyadditive was included as well, (Tegorad 2250, Tegorad 2300, or HFPO) ata level between 0.005 and 0.1 wt %.

General Coating Process:

Examples 69-77, 79, 81-88, 89-111, 116-120, and 122-124 included thefollowing coating process. The general process for coating andprocessing the solutions followed the schematic drawing in FIG. 17A. Thecoating solution was delivered to a 4 or 8 inch (10.2 or 20.3 cm) wideslot-type coating die and coated onto a moving 0.002, 0.003, 0.004, or0.005 inch (50, 75, 100, or 125 μm) thick poly(ethylene terephthalate)(“PET”) or polycarbonate (“PC”) base film (web). For each example, thewidth of the die and the specific base film are given in Table 9. Theweb speed was set, in combination with the solution delivery rate, inorder to achieve a target wet coating thickness. The web speeds and thecoating solution delivery rates for each example are also given in Table9. After the solution was coated onto the web, the coated web traveled a10 ft (3 m) span in the room environment, and then passed through two 5ft (1.5 m) long zones of small gap drying with plate temperatures set ata controlled temperature. For PET based films, the plate temperature was170° F. (77° C.). For PC base films, the plate temperature was 145° F.(63° C.). Finally, the dried coating entered a UV chamber equipped witha UV light source (Model I300P from Fusion System, Gaithersburg Md.)where an H-bulb was used. The UV chamber was purged by a gas streamcomprising a mixture of nitrogen and air. The composition of the gasstream was fixed by mixing controlled flows (rates) of nitrogen and airinto a single gas delivery line to the UV cure chamber. The flow rate ofnitrogen was fixed at 314 L/min (11 scfm), and the flow rate of air wasadjusted to control the oxygen level in the UV cure chamber, asspecified in Table 10.

Examples 78, 80, 112-115, and 121 included the following coatingprocess. The coating solution was delivered to a 4 or 8 inch (10.1 or20.3 cm) wide slot-type coating die and coated onto a moving 0.002,0.003 inch (50, 75 μm) thick poly(ethylene terephthalate),polycarbonate, or cellulose triacetate base film (web). After thesolution was coated onto the base film, the coated web then traveledapproximately 3 ft (0.9 m) before entering a 30 ft (9.1 m) conventionalair floatation drier with all 3 zones set at 120° F. (66° C.). The webspeed was set, in combination with the solution delivery rate, in orderto achieve a target wet coating thickness. The web speeds and thecoating solution delivery rates for each example are given in Table 9.After the drier, the coating entered two sequential UV chambers equippedwith a UV light source (Model I300P from Fusion System) with an H-bulbin both chambers. Each UV system was equipped with a variable poweroutput supply. The first UV chamber was purged by a gas streamcomprising a mixture of nitrogen and air. The composition of the gasstream was fixed by mixing controlled flows (rates) of nitrogen and airinto a single gas delivery line to the UV cure chamber. The flow rate ofnitrogen was fixed at 456 L/min (16 scfm), and the flow rate of air wasadjusted to control the oxygen level in the UV cure chamber, asspecified in Table 10. The second UV chamber was purged similarly tocontrol the oxygen level. For examples 78 and 80, only the first chamberwas used at a UV power level of 100%. For examples 112-115 and 121 thefirst chamber UV power level was 25% while the second chamber UV powerlevel was 75%.

Examples 69-70

Typical Preparation of Surface Modified 20 nm Silica Particles

The 20 nm silica was surface modified (100:0 MPS:A1230) molar ratio asfollows. 1-methoxy-2-propanol (450.12 grams), MPS (25.27 grams), andradical inhibitor solution (0.2 gram of a 5% solution in DI water) weremixed with a dispersion of spherical silica submicrometer particles (400grams with a silica content of 41.05%; NALCO 2327) while stirring. Thesolution was sealed and heated to 80° C. and held at temperature for 16hours in a 1 liter glass jar. The surface modified colloidal dispersionwas further processed to remove water and increase the silicaconcentration. A 500 ml RB flask was charged with the surface modifieddispersion (450 grams) and 1-methoxy-2-propanol (50 grams). Water and1-methoxy-2-propanol were removed via rotary evaporation to give aweight of 206 grams. 1-methoxy-2-propanol (250 grams) was charged to theflask and water and 1-methoxy-2-propanol were removed via rotaryevaporation to give a final weight of 176 grams. The solution wasfiltered with 1 micrometer filter. The resulting solids content was50.99 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For examples 69-70 a 1:1 mixture of1-methoxy-2-propanol and isopropyl alcohol was used as the dilutingsolvent in the coating solution.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Table 9, including the coatingwidth, web speed, coating solution flow rate, and the concentration ofoxygen present during the curing process.

Examples 71-77

Typical Preparation of Surface Modified 75 nm Silica Particles:

The 75 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asfollows. 1-methoxy-2-propanol (450 grams), MPS (6.04 grams), and radicalinhibitor solution (0.2 gram of a 5% solution in DI water) were mixedwith a dispersion of spherical silica submicrometer particles (400 gramswith a silica content of 40.52%; NALCO 2329) while stirring. Thesolution was sealed and heated to 80° C. and held at temperature for 16hours in a 1 liter glass jar. The surface modified colloidal dispersionwas further processed to remove water and increase the silicaconcentration. A 500 ml RB flask was charged with the surface modifieddispersion (450 grams). Water and 1-methoxy-2-propanol were removed viarotary evaporation to give a weight of 202.85 grams.1-methoxy-2-propanol (183 grams) was charged to the flask and water and1-methoxy-2-propanol were removed via rotary evaporation to give a finalweight of 188.6 grams. The solution was filtered with 1 micrometerfilter. The resulting solids content was 46.42 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10 including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For examples 71-77, 0.006 wt. % HFPO was addedas a surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 78

Preparation of Surface Modified 75 nm Silica Particles:

The 75 nm silica was surface modified as described for Example 71-77,except a molar ratio of 75:25 (MPS:A1230) was used. The resulting solidscontent was 44.64 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For example 78, 0.1 wt. % Tegorad 2300 wasadded as a surface additive. A 1:1 mixture of 1-methoxy-2-propanol andisopropyl alcohol was used as the diluting solvent in the coatingsolution.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 79

Preparation of Surface Modified 75 nm Silica Particles:

The 75 nm silica was surface modified as described in Examples 71-77.The resulting solids content was from 40 to 50 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For example 79, 0.034 wt. % Tegorad 2300 wasadded as a surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 80

Preparation of Surface Modified 75 nm Silica Particles:

The 75 nm silica was surface modified as described for Example 71-77,except a molar ratio of 75:25 (MPS:A1230) was used. The resulting solidscontent was 44.64 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For example 80, 0.1 wt. % Tegorad 2300 wasadded as a surface additive. A 1:1 mixture of 1-methoxy-2-propanol andisopropyl alcohol was used as the diluting solvent in the coatingsolution.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 81

Preparation of Surface Modified 75 nm Silica Particles:

The 75 nm silica was surface modified (75:25 MPS:A1230 molar ratio) asfollows. 1-methoxy-2-propanol (450 grams), MPS (4.53 grams), A1230 (3.03grams), and radical inhibitor solution (0.2 gram of a 5% solution in DIwater) were mixed with a dispersion of spherical silica submicrometerparticles (400.03 grams with a silica content of 40.52%; NALCO 2329)while stirring. The solution was sealed and heated to 80° C. and held attemperature for 16 hours in a 1 liter glass jar. The water and1-methoxy-2-propanol were removed from the mixture via rotaryevaporation to obtain a powder. A portion of the powder (48.01 grams)was dispersed in 1-methoxy-2-propanol (51.61 grams) and D.I. water (7.04grams). The mixture was charged to a 118.3 ml (4 oz.) glass jar andprocessed for 43 minutes (level 90, 50% power) using an ultrasonicprocessor (obtained from Sonic and Materials Inc., Newtown, Conn.;equipped with a probe under the trade designation “SM 07 92”)). Thesolution was filtered with 1 micrometer filter. The resulting solidscontent was 42.37 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 82-83

Preparation of Surface Modified 75 nm Silica Particles:

The same particle solution was used as in Example 81. The resultingsolids content was 42.37 wt %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For examples 82-83, 0.094 wt % HFPO was addedas a surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 84

Preparation of Surface Modified 75 nm Silica Particles:

The same particle solution was used as in Example 81. The resultingsolids content was 42.37 wt %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 85-86

Typical Preparation of Surface Modified 100 nm Silica Particles:

The 100 nm silica was surface modified (75:25 MPS:A1230 molar ratio) asfollows. 1-methoxy-2-propanol (452 grams), of MPS (4.78 grams), A1230(3.21 grams), and radical inhibitor solution (0.06 gram of as 5%solution in DI water) were mixed with a dispersion of spherical silicasubmicrometer particles (399.9 grams with a silica content of 42.9;MP1040) while stirring. The solution was sealed and heated to 80° C. andheld at temperature for 16 hours in a 1 liter glass jar. The water and1-methoxy-2-propanol were removed from the mixture via rotaryevaporation to obtain a powder. A portion of the powder (169.33 grams)was dispersed in 1-methoxy-2-propanol (185.10 grams), and D.I. water(21.95 grams). The mixture was charged to a 473 ml (16 oz.) glass jarand processed for 63 minutes (level 90, 50% power) using an ultrasonicprocessor. The solution was filtered with 1 micrometer filter. Theresulting solids content was 41.69 wt %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 87-88

Preparation of Surface Modified 100 nm Silica Particles:

The same particle solution was used as in Examples 85-86. The resultingsolids content was 41.69 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 89-90

Preparation of Surface Modified 100 nm Silica Particles:

The 100 nm silica was surface modified as described for Examples 85-86.The resulting solids content was 42.08 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For examples 89-90, 0.057 wt. % HFPO was addedas a surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 91-92

Preparation of Surface Modified 115 nm Silica Particles:

The 115 nm silica was surface modified (50:50 MPS:A1230 molar ratio) asfollows. 1-methoxy-2-propanol (450 grams), MPS (3.51 grams), A1230 (7.23grams), and radical inhibitor solution (0.12 gram of a 5% solution in DIwater) were mixed with a dispersion of spherical silica submicrometerparticles (400.03 grams with a silica content of 47.47%; NALCO 2329Plus)while stirring. The solution was sealed and heated to 80° C. and held attemperature for 16 hours in a 1 liter glass jar. The water and1-methoxy-2-propanol were removed from the mixture via rotaryevaporation to obtain a powder. A portion of the powder (100.06 grams)was dispersed in 1-methoxy-2-propanol (110.98 grams) and D.I. water(11.59 grams). The mixture was charged to a 473.2 ml (16 oz.) glass jarand processed for 63 minutes (level 90, 50% power) using an ultrasonicprocessor. The resulting solids content was 43.14 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 93-94

Typical Preparation of Surface Modified 115 nm Silica Particles:

The same particle solution was used as in Examples 91-92. The resultingsolids content was 43.14 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 95

Preparation of Surface Modified 115 nm Silica Particles:

The 115 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asfollows. 1-methoxy-2-propanol (676.17 grams), MPS (10.59 grams), andradical inhibitor solution (0.32 gram of a 5% solution in DI water) weremixed with a dispersion of spherical silica submicrometer particles(600.34 grams with a silica content of 47.47%; “Nalco 2329Plus”) whilestirring. The solution was sealed and heated to 94° C. and held attemperature for 16 hours in 2000 ml RB flask fitted with a refluxcondenser and a mechanical stirrer. The water and 1-methoxy-2-propanolwere removed from the mixture via rotary evaporation to obtain a powder.The powder (99.75 gram) was dispersed in -methoxy-2-propanol (89.22grams) and D.I. water (12.01 grams). The mixture was charged to a literglass jar and processed for 43 minutes (level 90, 50% power) using anultrasonic processor. The solution was filtered with 1 micrometerfilter. The resulting solids content was 39.95 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 96-97

Typical Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asfollows. 1-methoxy-2-propanol (451.56 grams), MPS (8.72 grams), andradical inhibitor solution (0.22 gram of a 5% solution in DI water) weremixed with a dispersion of spherical silica submicrometer particles(400.01 grams with a silica content of 44.15%; MP2040″) while stirring.The solution was sealed and heated to 93° C. and held at temperature for16 hours in 1000 ml RB flask fitted with a reflux condenser and amechanical stirrer. The water and 1-methoxy-2-propanol were removed fromthe mixture via rotary evaporation to obtain a powder. The powder(187.21 gram) was dispersed in -methoxy-2-propanol (201.34 grams) andD.I. water (27.44 grams). The mixture was charged to a liter glass jarand processed for 43 minutes (level 90, 50% power) using an ultrasonicprocessor. The solution was filtered with 1 micrometer filter. Theresulting solids content was 41.99 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For examples 96-97, 0.04 wt. % Tegorad 2250 wasadded as a surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 98

Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asdescribed for Examples 96-97. The resulting solids content was 41.47 wt.%.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 99

Preparation of Surface Modified 190 nm Silica Particles:

Two batches of 190 nm silica were used that were surface modified (100:0MPS:A1230 molar ratio) as described for Examples 96-97. The resultingsolids contents were 41.02 and 41.86 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 100-107

Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asdescribed for Examples 96-97. The resulting solids content was 44.45 wt.%.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For examples 100-107, 0.025 wt. % HFPO wasadded as a surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 108-111

Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asdescribed for Examples 96-97. The resulting solids content was 40.92 wt.%.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For examples 108-111, 0.025 wt. % HFPO wasadded as a surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 112-115

Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asdescribed for Examples 96-97. The resulting solids content was 44.18 wt.%.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For examples 112-115, 0.025 wt. % HFPO wasadded as a surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 116-118

Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asdescribed for Example 96-97. The resulting solids content was 44.45 wt.%.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 119

Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asdescribed for Examples 96-97. The resulting solids content was 44.27 wt.%.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10 including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 120

Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asdescribed for Examples 96-97. The resulting solids content was 44.27 wt.%.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For example 120, 0.034 wt. % HFPO was added asa surface additive.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Example 121

Preparation of Surface Modified 190 nm Silica Particles:

The 190 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asdescribed for Examples 96-97. The resulting solids content was 45.49 wt.%.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable). For example 121, 0.093 wt. % HFPO was added asa surface additive. A 1:1 mixture of 1-methoxy-2-propanol and methylethyl ketone was used as the diluting solvent in the coating solution.

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Examples 122-124

Typical Preparation of Surface Modified 440 nm Silica Particles:

The 440 nm silica was surface modified (100:0 MPS:A1230 molar ratio) asfollows. 1-methoxy-2-propanol (450 grams), MPS (3.82 grams), and radicalinhibitor solution (0.36 gram of a 5% solution in DI water) were mixedwith a dispersion of spherical silica submicrometer particles (401 gramswith a silica content of 45.7 wt. %; MP4540) while stirring. Thesolution was sealed and heated to 98° C. and held at temperature for 16hours in a 1000 ml RB flask fitted with a reflux condenser andmechanical stirrer. The water and 1-methoxy-2-propanol were removed fromthe mixture via rotary evaporation to obtain a dry powder. The powder(192.17 grams) was dispersed in 1-methoxy-2-propanol (206.73 grams) andD. I. water (28.19 grams). The mixture was charged to a 1 liter glassjar and processed for 63 minutes (level 90, 50% power) using anultrasonic processor. The solution was filtered with a 5 micrometerfilter. The resulting solids content was 43.84 wt. %.

Preparation of Radiation Curable Coating Solution:

The coating solution was prepared as discussed above in “Generalpreparation of radiation curable coating solution” and according to thespecifics in Tables 9 and 10, including silica particles, surfacemodification of silica particles, prepolymer blend composition, weightfraction of silica particles to prepolymer blend, wt % ofphotoinitiator, % solids of final coating solution, and surface additivewt % (where applicable).

Coating the Solution:

The solution was coated as discussed above in “General coating process”.The coating specifics are listed in Tables 9 and 10, including thecoating width, web speed, coating solution flow rate, and theconcentration of oxygen present during the curing process.

Characterization of the Articles

Tables 10 and 11 report measured properties for substrates having ananostructured surface, before and after metallization. In Table 10, thereflectance of the substrate front (nanostructured) surface was measuredby Reflectance Test Method 1. In Table 11, the method used fordetermining the reflectance of the interface between the metallizationand the substrate nanostructured surface was Reflectance Test Method 4.The method used for determining the reflectance of the exposed surfaceof a metallization on a substrate was Reflectance Test Method 6. Thenanostructure depth for Examples 98-103, 110, and 111 was measured byAFM. In the AFM method for determining the nanostructure depth,elevation data over a leveled area of 5 micrometers by 5 micrometers wasanalyzed. In order to generate a single figure to describe thenanostructure depth, the elevation range associated with approximately99% of the sampled area (i.e., removing outlier extremes in protrusionheight and nanostructure depth) was taken as the nanostructure depth.For Examples 90, 113-115 the nanostructure depth was taken to be thedepth measured by TEM of the Ag penetration into the nanostructuredsurface. The Ag thickness of Examples 90, 113-115 was measured by TEM.The Ag thickness of the remainder of the examples was measured bystandard profilometry techniques, on the metal deposited on a witnessglass slide that was present during the metallization of thenanostructured surfaces. Table 12 reports results of measurement ofmetal overlayer thickness and penetration by cross-sectionaltransmission electron microscopy, for Examples 113-115. Metal overlayerthickness is the thickness of metal that overcoats the surfaceasperities (e.g., protrusive particles) of the nanostructured surface.Metal penetration is the distance (measured essentially normal to thenanostructured major substrate surface; i.e., essentially a verticaldistance) from a surface asperity (e.g., protrusive particle) to thedeepest extent of metal that is disposed next to the asperity.

TABLE 9 Composition & experimental parameters for Structured ParticleCoating substrates Web Coating Speed Flow Rate % Silica Surface Example# Substrate width (in) (ft/min) (cc/min) Solids Particles modificationC3 PET-6 — — — — — — 69 PET-2 4 10 5.25 40  20 nm MPS 70 PET-2 4 10 5.2540  20 nm MPS 71 PET-3 4 10 5.25 40  75 nm MPS 72 PET-3 4 10 5.25 40  75nm MPS 73 PET-3 4 10 5.25 40  75 nm MPS 74 PET-3 4 10 5.25 40  75 nm MPS75 PET-3 4 10 5.25 40  75 nm MPS 76 PET-3 4 10 5.25 40  75 nm MPS 77PET-3 4 10 5.25 40  75 nm MPS 78 TAC 4 50 18 40  75 nm MPS 79 PET-4 4 205.5 40  75 nm MPS/A1230 75:25 80 PET-2 4 50 18 40  75 nm MPS/A1230 75:2581 PET-5 4 10 5.25 40  75 nm MPS/A1230 75:25 82 PET-5 4 10 2.62 40  75nm MPS/A1230 75:25 83 PET-5 4 10 3.00 40  75 nm MPS/A1230 75:25 84 PET-54 10 5.3 40  75 nm MPS/A1230 75:25 85 PET-5 4 10 5.25 40 100 nmMPS/A1230 75:25 86 PET-5 4 10 3.0 40 100 nm MPS/A1230 75:25 87 PET-5 410 2.65 40 100 nm MPS/A1230 75:25 88 PET-5 4 10 5.25 40 100 nm MPS/A123075:25 89 PET-6 8 10 5.25 40 100 nm MPS/A1230 75:25 90 PET-6 8 10 10 40100 nm MPS/A1230 50:50 91 PET-5 4 10 2.62 40 115 nm MPS/A1230 50:50 92PET-5 4 10 5.25 40 115 nm MPS/A1230 50:50 93 PET-5 4 10 3.00 40 115 nmMPS/A1230 50:50 94 PET-5 4 10 3.00 40 115 nm MPS/A1230 50:50 95 PET-5 410 2.62 40 115 nm MPS 96 PET-2 4 10 5 40 190 nm MPS 97 PET-2 4 10 2.5 40190 nm MPS 98 PET-2 4 10 2.625 40 190 nm MPS 99 PET-5 4 10 2.65 40 190nm MPS 100 PET-3 4 10 2.625 40 190 nm MPS 101 PET-3 4 10 2.625 40 190 nmMPS 102 PET-3 4 10 2.625 40 190 nm MPS 103 PET-3 4 10 4 40 190 nm MPS104 PET-3 4 10 2 40 190 nm MPS 105 PET-3 4 10 2 40 190 nm MPS 106 PET-34 10 2 40 190 nm MPS 107 PET-3 4 10 2 40 190 nm MPS 108 PET-3 4 10 5.2540 190 nm MPS 109 PET-3 4 10 4 40 190 nm MPS 110 PET-3 4 10 2.625 40 190nm MPS 111 PET-6 4 10 4 40 190 nm MPS 112 PET-6 8 25 14 40 190 nm MPS113 PET-6 8 25 14 40 190 nm MPS 114 PET-6 8 25 14 40 190 nm MPS 115PET-6 8 25 14 40 190 nm MPS 116 PC 4 10 5 40 190 nm MPS 117 PC 4 10 4 40190 nm MPS 118 PC 4 10 5 40 190 nm MPS 119 PET-8 4 10 2.65 40 190 nm MPS120 PET-8 4 10 2.65 40 190 nm MPS 121 PET-6 8 25 18.00 40 190 nm MPS 122PET-7 4 10 2.62 43.84 440 nm MPS 123 PET-7 4 10 5.25 43.84 440 nm MPS124 PET-7 4 10 5.25 43.84 440 nm MPS

TABLE 10 Composition, experimental parameters and data fornanostructured Structured Particle Coating substrates Prepolymer blendin Wt % NP/ Vol % NP/ % Initiator % R substrate Example # 40:40:20 wt.ratio Monomer Monomer (IR 184) Additive O₂ (ppm) front surface % T % HC3 — — — — — — 6.56 92.1 0.78 69 SR295/SR238/SR506 80/20 68.8/31.3 3 —2200 2.63 96.3 1.26 70 SR295/SR238/SR506 80/20 68.8/31.3 3 — 10000 2.6296.1 1.37 71 SR295/SR238/SR506 75/25 62.3/37.7 3 0.006% HFPO 40 4.0690.3 0.72 72 SR295/SR238/SR506 75/25 62.3/37.7 3 0.006% HFPO 670 3.4991.6 0.48 73 SR295/SR238/SR506 75/25 62.3/37.7 3 0.006% HFPO 1800 2.1492.2 0.42 74 SR295/SR238/SR506 75/25 62.3/37.7 3 0.006% HFPO 4050 2.2093.3 0.54 75 SR295/SR238/SR506 75/25 62.3/37.7 3 0.006% HFPO 6100 2.4092.9 1.04 76 SR295/SR238/SR506 75/25 62.3/37.7 3 0.006% HFPO 8500 2.3692.7 1.68 77 SR295/SR238/SR506 75/25 62.3/37.7 3 0.006% HFPO 10000 2.4992.7 2.84 78 SR295/SR238/SR506 75/25 62.3/37.7 3 0.1% Tegorad2300 20001.52 95.8 0.92 79 SR295/SR238/SR506 75/25 62.3/37.7 3 0.034% HFPO 41501.78 94.5 0.90 80 SR492/SR238/SR440 75/25 61.1/38.9 3 0.1% Tegorad23004400 1.70 94.0 0.45 81 SR492/SR238/SR440 70/30 54.9/45.1 3 — 770 1.8196.4 0.71 82 SR492/SR238/SR440 70/30 54.9/45.1 3 0.093% HFPO 55 3.1895.3 0.91 83 SR492/SR238/SR440 70/30 54.9/45.1 3 0.093% HFPO 816 1.8796.3 1.36 84 SR492/SR238/SR440 70/30 54.9/45.1 3 — 9040 2.52 95.7 12.185 SR492/SR238/SR440 70/30 54.9/45.1 3 — 700 2.03 96.1 0.83 86SR492/SR238/SR440 70/30 54.9/45.1 3 — 725 1.96 96.1 0.84 87SR492/SR238/SR440 67.5/32.5 52.1/47.9 3 — 900 1.84 96.4 1.17 88SR492/SR238/SR440 67.5/32.5 52.1/47.9 3 — 950 1.78 96.4 1.26 89SR492/SR238/SR440 67.5/32.5 52.1/47.9 3 0.057% HFPO 730 1.93 93.8 0.9990 SR492/SR238/SR440 67.5/32.5 52.1/47.9 3 0.057% HFPO 730 1.79 93.51.57 91 SR492/SR238/SR440 70/30 49.3/50.7 1 — 800 1.68 96.2 1.59 92SR492/SR238/SR440 70/30 49.3/50.7 1 — 800 1.73 96.1 1.53 93SR492/SR238/SR440 70/30 49.3/50.7 3 — 780 1.83 96.0 1.27 94SR492/SR238/SR440 70/30 49.3/50.7 3 — 2030 1.65 96.2 1.82 95SR295/SR238/SR506 70/30 56.2/43.8 3 — 2150 2.13 95.9 1.80 96SR295/SR238/SR506 65/35 50.5/49.5 1 0.04% Tegorad2250 800 1.46 93.9 2.0497 SR295/SR238/SR506 57.5/42.5 50.5/49.5 1 0.04% Tegorad2250 2600 1.1794.3 2.65 98 SR295/SR238/SR506 65/35 50.5/49.5 1 — 2900 1.57 94.0 1.3099 SR295/SR238/SR506 65/35 50.5/49.5 1 — 5100 1.71 95.8 2.32 100SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 40 4.07 91.8 0.71 101SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 3800 1.57 93.3 1.75 102SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 17600 1.33 92.8 1.91 103SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 17600 1.38 93.3 2.79 104SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 2050 1.66 93.2 1.32 105SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 5800 1.38 93.7 1.71 106SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 10000 1.52 93.4 1.76 107SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 15800 1.29 93.7 1.80 108SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 17600 1.56 94.4 3.07 109SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 17600 1.55 94.3 3.24 110SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 17600 1.52 94.5 2.66 111SR295/SR238/SR506 65/35 50.5/49.5 1 0.025% HFPO 17600 1.44 94.8 2.31 112SR295/SR238/SR506 67.5/32.5 53.3/46.7 1 0.025% HFPO 9200/6600 1.20 93.62.56 113 SR295/SR238/SR506 67.5/32.5 53.3/46.7 1 0.025% HFPO 9200/66001.20 93.6 2.56 114 SR295/SR238/SR506 67.5/32.5 53.3/46.7 1 0.025% HFPO9200/6600 1.20 93.6 2.56 115 SR295/SR238/SR506 67.5/32.5 53.3/46.7 10.025% HFPO 9200/6600 1.20 93.6 2.56 116 SR295/SR238/SR506 67.5/32.553.3/46.7 1 — 3900 1.30 95.2 0.90 117 SR295/SR238/SR506 67.5/32.553.3/46.7 1 — 8200 1.11 95.1 1.04 118 SR492/SR238/SR440 67.5/32.552.1/47.9 1 — 8300 0.90 95.6 1.35 119 SR492/SR238/SR440 65/35 49.3/50.71 — 8470 1.67 94.6 2.08 120 SR492/SR238/SR440 65/35 49.3/50.7 1 0.034%HFPO 9500 1.47 94.5 3.06 121 SR295/SR238/SR506 67.5/32.5 53.3/46.7 10.093% HFPO 9200 1.30 93.6 2.89 122 SR295/SR238/SR506 75/25 62.3/37.7 1— 9230 1.37 91.6 21.9 123 SR295/SR238/SR506 75/25 62.3/37.7 1 — 70801.40 91.5 19.0 124 SR295/SR238/SR506 65/35 50.5/49.5 1 — 6300 1.66 90.814.0

TABLE 11 Measured properties for nanostructured substrates having metaldisposed thereon by sputtering % R metal % R interface metal Ag withexposed σ σ, PET Fraction thickness Nanostructure Example # substratesurface (Mhos) (Mhos) retained σ (nm) depth (nm) C3 79.8 89.9 — 4.12 —148 — 69 76.8 89.9 4.73 4.93 0.96 138 — 70 75.6 89.9 4.69 4.93 0.95 138— 71 85.2 95.4 4.96 5.10 0.97 140 — 72 57.2 95.1 4.63 5.10 0.91 140 — 7338.6 94.1 4.43 5.10 0.87 140 — 74 38.2 94.0 4.34 5.10 0.85 140 — 75 37.493.7 4.31 5.10 0.85 140 — 76 37.4 93.7 4.41 5.10 0.86 140 — 77 34.6 93.44.35 5.10 0.85 140 — 78 46.8 94.9 4.91 5.07 0.97 140 — 79 39.1 93.9 4.605.07 0.91 140 — 80 45.9 94.6 4.63 5.07 0.91 140 — 81 26.7 83.3 4.43 5.710.78 150 — 82 56.9 83.5 4.93 5.71 0.86 150 — 83 23.4 78.9 4.25 5.71 0.74150 — 84 26.2 83.3 4.53 5.71 0.79 150 — 85 17.7 70.5 3.71 5.71 0.65 150— 86 15.9 71.2 3.78 5.71 0.66 150 — 87 15.1 70.1 3.70 5.21 0.71 150 — 8813.6 67.2 3.51 5.21 0.67 150 — 89 16.8 71.9 4.18 5.98 0.70 165 — 90 11.572.3 4.58 5.97 0.77 205 — 91 12.6 70.9 3.81 5.71 0.67 150 — 92 10.1 68.63.62 5.71 0.63 150 — 93 15.2 66.8 3.42 5.71 0.60 150 — 94 10.8 66.1 3.335.71 0.58 150 — 95 25.9 84.3 4.57 5.21 0.88 150 — 96 41.7 75.2 4.95 6.850.72 150 — 97 17.1 64.8 4.22 6.85 0.62 150 — 98 38.2 70.4 5.02 7.12 0.70155 162 99 30.1 77.3 5.37 7.37 0.73 185 124 100 84.4 95.4 6.24 6.18 1.01175  32 101 37.6 77.3 4.21 6.18 0.68 175 150 102 22.2 69.2 3.73 6.180.60 175 187 103 18.7 65.6 3.39 6.18 0.55 175 215 104 45.2 77.5 4.426.18 0.72 175 — 105 35.3 69.5 4.06 6.18 0.66 175 — 106 28.2 70.6 3.896.18 0.63 175 — 107 23.2 70.6 3.88 6.18 0.63 175 — 108 17.8 60.3 2.335.10 0.46 140 — 109 17.1 60.9 2.41 5.10 0.47 140 — 110 17.6 62.3 2.545.10 0.50 140 132 111 15.8 59.3 2.22 5.10 0.44 140 185 112 18.7 60.12.45 5.10 0.48 140 — 113 19.3 68.4 2.77 4.58 0.61 134 116 114 13.6 56.51.86 4.12 0.45 147 142 115 13.0 60.5 3.19 5.37 0.59 185 120 116 41.784.6 4.68 6.18 0.76 175 117 30.9 84.2 4.65 6.18 0.75 175 — 118 17.2 66.73.69 6.18 0.60 175 — 119 15.9 68.7 3.62 5.71 0.63 152 — 120 13.1 62.62.98 5.71 0.52 152 — 121 12.0 68.2 4.27 6.00 0.71 205 — 122 19.8 53.61.47 4.93 0.30 138 — 123 25.6 59.8 1.98 4.93 0.40 138 — 124 56.1 81.33.55 4.93 0.72 138 —

TABLE 12 Dimensional data measured from cross-sectional TEM imagingperformed on the metallized articles of Examples 113-115. Example 114Example 115 Example 113 Overlayer Overlayer Overlayer ThicknessPenetration Thickness Penetration Thickness Penetration Average (nm)147.5 141.5 184.6 120.1 133.9 115.9 St Dev (nm) 15.8 78.8 11.6 46.1 16.847.9 Max (nm) 212.4 540.9 206.7 239.6 164.8 201.2 Min (nm) 131.6 59.9147.9 44.9 109.1 61.3 # measurements 33 47 46 59 19 12

Example 125

A silver-coated, nanostructured substrate was prepared according toExample 112, except that the measured conductance was 1.68 Mhos. Theaverage thickness of the sputtered silver was estimated based uponconductance to be approximately 140 nm. The silver coating was patternedby printing an octadecylthiol self-assembled monolayer mask on itssurface, followed by wet chemical etching, as described in U. S. PatentApplication US 20090218310 (Ser. No. 12/393,201). The resulting patternof conductor on the nanostructured substrate included curved tracesmeasuring approximately 2 micrometers in width, forming a pseuodorandomarrangement of mesh cells with open area fraction of approximately 98.5to 99.0%. The contiguous mesh was measured to have a sheet resistance of111 ohms per square.

Example 126

A silver-coated, nanostructured substrate was prepared according toExample 112, except that the measured conductance was 3.89 Mhos. Theaverage thickness of the sputtered silver was estimated based uponconductance to be approximately 205 nm. The silver coating was patternedby printing an octadecylthiol self-assembled monolayer mask on itssurface, followed by wet chemical etching, as described in U.S. PatentApplication US 20090218310 (Ser. No. 12/393,201). The resulting patternof conductor on the nanostructured substrate included curved tracesmeasuring approximately 2 micrometers in width, forming a pseuodorandomarrangement of mesh cells with open area fraction of approximately 98.5to 99.0%. The contiguous mesh was measured to have a sheet resistance of56 ohms per square. FIG. 25 is a transmitted light opticalphotomicrograph illustrating selected traces from the mesh.

Example 127

A silver-coated, nanostructured substrate was prepared according toExample 112, except that the measured conductance was 4.78 Mhos. Theaverage thickness of the sputtered silver was estimated based uponconductance to be approximately 230 nm. The silver coating was patternedby printing an octadecylthiol self-assembled monolayer mask on itssurface, followed by wet chemical etching, as described in U.S. PatentApplication US 20090218310 (Ser. No. 12/393,201). The resulting patternof conductor on the nanostructured substrate included curved tracesmeasuring approximately 2 micrometers in width, forming a pseuodorandomarrangement of mesh cells with open area fraction of approximately 98.5to 99.0%. The contiguous mesh was measured to have a sheet resistance of38 ohms per square. The nanostructured substrate having a conductormicropattern disposed thereon was measured to have visible lighttransmittance of 89.5%, transmitted haze of 1.58%, and transmitted lightclarity of 99.6%.

Example 128

A transparent sensor element was fabricated using microcontact printingand etching and combined with a touch sensor drive device. The devicewas integrated with a computer processing unit connected to a display totest the device. The resulting system was able to detect the positionsof single or multiple finger touches (e.g., multiple simultaneoustouches), which was evidenced graphically on the display.

Formation of a Transparent Sensor Element First Patterned Substrate

A first visible light substrate according to Example 121 above wascoated with 205 nanometers of silver using a sputter coater to yield afirst silver metalized film. The silver was deposited on thenanostructured surface of the substrate. Before silver was depositedonto the substrate, a titanium adhesion promotion deposit of less thanapproximately 10 angstroms average thickness was sputter deposited. Afirst stamp made of poly(dimethylsiloxane), referred to as PDMS andcommercially available as product number Sylgard 184, Dow Chemical Co.,Midland, Mich., having a thickness of 2.5 millimeters, was moldedagainst a glass plate (sometimes referred to in the industry as a“master”) that had previously been patterned with photoresist usingstandard photolithography techniques. The PDMS was cured on the glassplate. Thereafter, the PDMS was peeled away from the plate to yield afirst stamp. The stamp relief pattern was the complement of thephotoresist relief pattern. The stamp had two different types oflow-density regions with patterns of raised features: a first continuousmesh pattern region type and a first discontinuous mesh pattern regiontype (i.e., mesh with breaks). That is, the raised features defined theedges of edge-sharing cells of meshes. To thither clarify, the edges ofcells making up meshes were defined by ridges of PDMS that protrudedaway from the surface of the first stamp. The cells had an average sizeof approximately 300 microns across and were pseudorandom in shape andsize. Furthermore, adjacent individual cells did not lie on a repeatingarray of positions. The edges of the cells, in the form of raisedfeatures on the stamp, exhibited curvature in the plane of the overallsurface of the stamp. The radius of curvature of different cell edgesranged from approximately 50 microns to approximately 400 microns. Theraised features of the stamp in the discontinuous regions included anapproximately 5 micron gap along each raised cell edge, approximatelymidway between vertices at each end of the cell edge. By gap along araised feature, what is meant is that there was a portion of the raisedfeature that was absent. Each raised cell edge (i.e., ridge of PDMS) hada height of approximately 2.5 microns. The density (area fraction) ofraised cell edges (ridges) in both the first continuous mesh patternregions and the first discontinuous mesh pattern regions wasapproximately 1.33 percent, corresponding to 98.67% open area, and theridges defining cell edges were approximately 2 microns in width. Thefirst stamp also included raised features defining multiple 40 micronwide traces, one each being connected to a first continuous mesh patternregion (as further clarified below in terms of the patterned substratethat results from this stamp). The first stamp had a first structuredside that had the pseuodorandom mesh pattern regions and the 40 micronwide traces and an opposing second substantially flat side. Thestructured side of the stamp was contacted to a 10 millimolar inksolution of 1-octadecanethiol (product number C18H3CS, 97%, commerciallyavailable from TCI America, Portland Oreg.) in ethanol for 30 minutes,followed by drying for at least 1 day. For printing, the first silvermetalized film was applied using a roller onto the now inked structuredsurface of the stamp such that the silver film was in direct contactwith the structured surface. The metalized film remained on the inkedstamp for 10 seconds. Then, the first metalized film was removed fromthe inked stamp. The removed film was floated (silver metal side down)atop a silver etchant solution for approximately 1 minute with bubblingagitation. The etchant solution contained (i) 0.030 molar thiourea(product number 18636, Sigma-Aldrich, St. Louis, Mo.) and (ii) 0.020molar ferric nitrate (product number 216828, Sigma-Aldrich) in deionizedwater. After the etching step, the resulting first substrate was rinsedwith deionized water and dried with compressed nitrogen gas to yield afirst patterned surface. Where the inked stamp made contact with thesilver of the first metalized substrate, the silver remained afteretching. Thus, silver was removed from the locations where contact wasnot made between the inked stamp and silver surface of the metallizedfilm.

FIG. 11 shows the first patterned substrate 700 schematically (not toscale) having a plurality of first continuous regions 702 alternatingbetween a plurality of first discontinuous regions 704 on a first sideof the substrate, which is the side that contained the now etched andpatterned silver metallization. The first patterned substrate actuallyhad 11 first continuous regions 702. The first continuous regions 702had width of approximately 2.2 millimeters, pitch of approximately 4.95millimeters, and length of approximately 95 millimeters. The substratehad an opposing second side that was substantially bare PET film. Eachof the first regions 702 has a corresponding 40 micron wide conductivetrace 706 disposed at one end, for making electrical contact to eachfirst continuous region 702. The mesh designs for the first patternedsubstrate were pseudorandom in shape and size, including curvature forthe conductive traces making up the meshes, as noted above (in contrastto the hexagonal mesh designs depicted in FIGS. 11a and 11b ).

Formation of a Transparent Sensor Element Second Patterned Substrate

The second patterned substrate was made as the first patterned substrateusing a second visible light substrate to produce a second silvermetalized film. A second stamp was produced having second continuousmesh pattern regions interposed between second discontinuous meshpattern region.

FIG. 12 shows the second patterned substrate 720 schematically (not toscale) having a plurality of second continuous regions 722 alternatingbetween a plurality of second discontinuous regions 724 on a first sideof the second substrate, which is the side that contained the now etchedand patterned silver metallization. The second patterned substrateactually had 19 first continuous regions 722. The second continuousregions 722 had width of approximately 4.48 millimeters, pitch ofapproximately 4.93 millimeters, and length of approximately 55millimeters. Each of the second continuous regions 722 had acorresponding 40 micron wide second conductive trace 726 disposed at oneend, for making electrical contact to each second continuous region 722.The mesh designs for the first patterned substrate were pseudorandom inshape and size, including curvature for the conductive traces making upthe meshes, as noted above (in contrast to the hexagonal mesh designsdepicted in FIGS. 12a and 12b ).

Formation of a Projected Capacitive Touch Screen Sensor Element

The first and second patterned substrates made above were used toproduce a two-layer projected capacitive touch screen transparent sensorelement as follows. The first and second patterned substrates wereadhered together using Optically Clear Laminating Adhesive 8271 from 3MCompany, St. Paul, Minn. to yield a multilayer constriction. A handheldroller was used to laminate the two patterned substrates with theregions of the first and second conductive trace regions 706 and 726being adhesive free. The multilayer construction was laminated to a 0.7mm thick float glass using Optically Clear Laminating Adhesive 8146-3such that the first side of the first substrate was proximate to thefloat glass. The adhesive free first and second conductive trace regions706 and 726 allowed electrical connection to be made to the first andsecond patterned substrates 700 and 720.

FIG. 13 shows schematically (not to scale) a top plan view of amultilayer touch screen sensor element 740 where the first and secondpatterned substrate have been laminated. Region 730 represented theoverlap of the first and second continuous regions. Region 732represented the overlap of the first continuous region and the seconddiscontinuous region. Region 734 represented the overlap of the secondcontinuous region and the first discontinuous region, And, region 736represented the overlap between the first and second discontinuousregions. While there was a plurality of these overlap regions, for easeof illustration, only one region of each has been depicted in thefigure.

Additional Components of the Touch Sensing System

The integrated circuits used to make mutual capacitance measurements ofthe transparent sensor element were the CY3290-TMA300 TrueTouch™ Dev Kitwith revision reference Rev *D, containing an I2C to USB converterbridge and microcontroller TMA350 (commercially available from CypressSemiconductor, San Jose, Calif.). The TMA350 was configured for thetransparent sensor element, as is known in the art. The configurationcan vary from touch screen to touch screen, depending on design. in thiscase, the system could drive 19 different bars and measure 11 differentbars. The configuration of the TMA350 included selection of the numberof channels to convert, how accurately or quickly to take measurements,the noise and touch thresholds, any digital filtering to be applied andvarious other settings particular to the CY3290-TMA300. While themeasurement from above was running, the microcontroller was also sendingthe data to a computer with monitor via the TrueTouch™ Bridge, whichconverts I2C from the TMA350 to USB for the computer interface. This USBinterface allows the Cypress TrueTouch™ software to render data from theTMA350 and see how the values were changing between a touch and notouch.

Results of Testing of the Touch Sensing System

The transparent sensor element was connected to the touch sensor drivedevice. When a finger touch was made to the glass surface, the computermonitor rendered the position of touch that was occurring within thetouch sensing region in the form of a color change (black to green) inthe corresponding location of the monitor and displayed the location inan adjacent display to simulate the result of the touch screen system.When two, three, and four finger touches were made simultaneously to theglass surface, the computer monitor rendered the positions of touchesthat were occurring within the touch sensing region in the form of acolor change (black to green) in the corresponding locations of themonitor and displayed the location in a touch screen simulation display.

What is claimed is:
 1. An article comprising: a substrate having ananostructured first surface and an opposing second surface; and aplurality of metallic traces disposed in a micropattern on the firstsurface of the substrate, wherein the metallic traces have a specularreflectance of less than 50% for light normally incident on the articlein a direction through the substrate toward the first surface.
 2. Thearticle of claim 1, wherein each metallic trace has an average thicknessfrom 0.05 micrometers to 2 micrometers.
 3. The article of claim 1,wherein each metallic trace has an average thickness from 0.075micrometers to 0.5 micrometers.
 4. The article of claim 1, wherein theplurality of metallic traces defines a plurality of cells.
 5. Thearticle of claim 4, wherein the cells are discontinuous.
 6. The articleof claim 4, wherein the cells are continuous.
 7. The article of claim 1,wherein the nanostructured first surface comprises nanofeatures having aheight from 50 to 500 nanometers.
 8. The article of claim 7, wherein thenanofeatures have a width from 15 to 200 nanometers, and a lateralspacing from 5 to 500 nanometers.
 9. The article of claim 1, wherein thespecular reflectance is less than 20%.
 10. The article of claim 1,wherein the specular reflectance is less than 10%.
 11. The article ofclaim 1, wherein the micropattern has an open area fraction greater than80% and each of the metallic traces has a width from 0.5 to 10micrometers.
 12. An article comprising: a transparent substrate having ananostructured surface and a metallic conductor disposed on thenanostructured surface, the metallic conductor having an averagethickness of greater than 50 nanometers, the nanostructured surfacecomprising nanofeatures having a height from 50 to 750 nanometers, awidth from 15 to 200 nanometers, and a lateral spacing from 5 to 500nanometers.
 13. The article of claim 12, wherein the average thicknessof the metallic conductor is in a range of 75 nm to 500 nm.
 14. Thearticle of claim 12, wherein the metallic conductor has a specularreflectance of less than 50% for light normally incident on the articlein a direction through the transparent substrate toward thenanostructured surface.
 15. The article of claim 14, wherein thespecular reflectance is less than 20%.
 16. The article of claim 14,wherein the specular reflectance is less than 10%.
 17. The article ofclaim 12, wherein the metallic conductor comprises a plurality of tracesdisposed in a micropattern.
 18. The article of claim 17, wherein themicropattern has an open area fraction greater than 80% and each of thetraces has a width from 0.5 to 10 micrometers.
 19. The article of claim12, wherein the nanostructured surface comprises a matrix and ananoscale dispersed phase that comprises nanoparticles having a particlesize from 50 nm to 250 nm.
 20. The article of claim 19, wherein thenanoparticles are present in the matrix from 40% to 85% by volume.